Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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NP36N055HLE-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SINGLE
36 A
METAL-OXIDE SEMICONDUCTOR
1
175 Cel
NOT SPECIFIED
N-CHANNEL
120 W
FET General Purpose Power
NO
2SJ199-T2-AZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Maximum Drain Current (ID): 1 A;
1 A
150 Cel
P-CHANNEL
2 W
Other Transistors
YES
2SK3058-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
55 A
58 W
UPA1809GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
8 A
e6
TIN BISMUTH
UPA1857GR-9JG-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Drain Current (ID): 3.8 A; Maximum Drain Current (Abs) (ID): 3.8 A; Terminal Finish: TIN BISMUTH;
3.8 A
1.7 W
UPA1873GR-9JG-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 6 A;
6 A
UPA1930TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
4.5 A
UPA2752GR-E1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 8 A;
e3
260
MATTE TIN
UPA2754GR(0)-E1-AY
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 2; Transistor Application: SWITCHING;
12.1 mJ
SEPARATE, 2 ELEMENTS
30 V
11 A
.0186 ohm
R-PDSO-G8
2
8
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
88 A
GULL WING
DUAL
SWITCHING
SILICON
UPA2794GR(0)-E1-AZ
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 5.5 A; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
5.5 A
N-CHANNEL AND P-CHANNEL
MCH6445-TL-W
Onsemi
MCH6445-TL-W by Onsemi is a N-CHANNEL FET with 4A max drain current and 1.5W power dissipation. Ideal for enhancement mode operation, it features metal-oxide semiconductor technology and can withstand up to 150 °C. Suitable for various power applications requiring high efficiency and reliability in surface mount configurations.
4 A
1.5 W
30
NTTFS4H05NTWG
NTTFS4H05NTWG by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max pulsed drain current of 304A, avalanche energy rating of 84mJ, and max operating temperature of 150°C. This MOSFET has a drain-source on resistance of 0.0048 ohm and can handle a max drain current of 22.4A efficiently in various electronic circuits.
84 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
25 V
94 A
22.4 A
.0048 ohm
S-PDSO-F5
5
SQUARE
46.3 W
304 A
Matte Tin (Sn) - annealed
FLAT
2SJ649-AZ
The Renesas Electronics 2SJ649-AZ is a P-CHANNEL FET with max drain current of 20A and power dissipation of 25W. Ideal for applications requiring high power handling in a single configuration, such as power supplies or motor control systems. Operating up to 150°C, it offers reliability and performance under demanding conditions.
20 A
25 W
10
2SK3353(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
82 A
95 W
2SK3353-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
2SK3430-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
80 A
84 W
2SK3433(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 47 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 40 A;
40 A
47 W
2SK3435-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 80 A;
2SK3479-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
83 A
125 W
2SK3481(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
30 A
56 W
NP22N055SLE-E2-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 22 A;
25 mJ
55 V
22 A
.051 ohm
TO-252
R-PSSO-G2
45 W
NP88N075KUE-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
288 W
NTMFS4H01NT1G
NTMFS4H01NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 568A IDM, and 0.00097 ohm RDS(on). Ideal for SWITCHING applications due to its 505mJ EAS rating. It comes in a PLASTIC/EPOXY package with DUAL terminals and operates at up to 150 °C.
505 mJ
54 A
.00097 ohm
212 pF
R-PDSO-F5
568 A
NTMFS4H01NT3G
NTMFS4H01NT3G by Onsemi is a N-CHANNEL FET with 334A ID, 125W power dissipation, and 150 °C max operating temp. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
334 A
NTMFS4H02NFT3G
NTMFS4H02NFT3G by Onsemi is a N-CHANNEL FET with 193A max drain current and 83W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, making it suitable for demanding environments requiring efficient power management.
193 A
83 W
NTTFS4H07NTAG
NTTFS4H07NTAG by Onsemi is a single N-channel power FET with 66A max drain current and 33.8W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, and is ideal for high-power applications in surface-mount configurations.
66 A
33.8 W
NTTFS4H07NTWG
NTTFS4H07NTWG by Onsemi is a single N-channel Power FET with 66A max drain current and 33.8W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, ideal for high-power applications in surface-mount configurations.
NTMFS4H01NFT1G
NTMFS4H01NFT1G by Onsemi is a N-CHANNEL FET with 334A max drain current and 125W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features surface mount configuration for efficient heat dissipation.
NTMFS4H01NFT3G
NTMFS4H01NFT3G by Onsemi is a N-CHANNEL FET with 334A ID, 125W power dissipation, and 150 °C max operating temp. Ideal for high-power applications requiring efficient switching and control in surface-mount configurations.
NTMFS4H02NT1G
NTMFS4H02NT1G by Onsemi is a N-CHANNEL FET with 193A max drain current and 83W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
NTMFS4H02NT3G
NTMFS4H02NT3G by Onsemi is a single N-channel Power FET with 193A max drain current and 83W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features metal-oxide semiconductor technology.
BBL4001-1E
BBL4001-1E by Onsemi is a N-channel Power FET with 60V DS breakdown voltage and 296A IDM. Ideal for applications requiring high power dissipation up to 35W, such as power management systems. Features include single configuration, rectangular package shape, and enhanced mode operation.
370 mJ
ISOLATED
60 V
74 A
.0098 ohm
540 pF
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
35 W
296 A
THROUGH-HOLE
IPP90R500C3
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Qualification: Not Qualified; Avalanche Energy Rating (EAS): 388 mJ;
388 mJ
900 V
.5 ohm
156 W
24 A
Not Qualified
BF351
Texas Instruments
Texas Instruments BF351 is a N-CHANNEL FET with 0.05A Max Drain Current and 0.36W Max Power Dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 175°C.
.05 A
.36 W
BF352
Texas Instruments' BF352 is a N-CHANNEL FET with 0.05A max drain current and 0.36W max power dissipation. Ideal for applications requiring high temperature resistance up to 175°C, such as power management systems and industrial control circuits.
TS300
Tokin
Power Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Terminal Position: END; Terminal Form: NO LEAD; Maximum Drain Current (ID): 200 A;
200 A
.3 ohm
O-CEDB-N2
CERAMIC, METAL-SEALED COFIRED
ROUND
DISK BUTTON
NO LEAD
END
STY34NB50
STMicroelectronics
STY34NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 136A Max Pulsed Drain Current, 0.13 ohm Max RDS(on), and 1000mJ Avalanche Energy Rating. Suitable for high-power circuits requiring efficient switching capabilities.
AVALANCHE RATED
1000 mJ
500 V
34 A
.13 ohm
TO-247
R-PSIP-T3
IN-LINE
450 W
136 A
IRFR9120NTRR
International Rectifier
IRFR9120NTRR by International Rectifier is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 26A and 0.48 ohm RDS(ON), operating in ENHANCEMENT MODE. This MOSFET is designed for high-performance power management systems requiring efficient switching capabilities.
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
100 mJ
100 V
6.6 A
.48 ohm
TO-252AA
e0
26 A
TIN LEAD
STP5NB60
STP5NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 20A IDM, and 2 ohm RDS(on). It's used for switching applications in enhancement mode with a max power dissipation of 100W.
300 mJ
600 V
5 A
2 ohm
100 W
STW38NB20
STW38NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 152A IDM, and 0.065 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 180W Pdiss and 150 °C Max Temp.
550 mJ
200 V
38 A
.065 ohm
TO-247AC
180 W
152 A
IRL530NL
IRL530NL by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.12 ohm RDS(on), and 175°C max operating temp.
HIGH RELIABILITY
150 mJ
17 A
.12 ohm
TO-262AA
79 W
60 A
IRF7413ATR
IRF7413ATR by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. It features a max IDM of 58A and 0.0135 ohm RDS(ON), making it ideal for SWITCHING applications. This ENHANCEMENT MODE transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount installations.
260 mJ
12 A
.0135 ohm
MS-012AA
58 A
IRF3205STRR
IRF3205STRR is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 200W and can withstand temperatures up to 175°C.
264 mJ
110 A
75 A
.008 ohm
211 pF
TO-263AB
-55 Cel
225
200 W
390 A
Tin/Lead (Sn/Pb)
115 ns
IRFR024NTRR
IRFR024NTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications, it features a 0.075 ohm Drain-Source On Resistance and 71mJ Avalanche Energy Rating. Suitable for surface mount with GULL WING terminals, this transistor operates in ENHANCEMENT MODE.
71 mJ
.075 ohm
245
38 W
68 A
IRFR5305TRL
IRFR5305TRL by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating.
280 mJ
31 A
IRFR5305TRR
IRFR5305TRR by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 110A and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE. This surface mount transistor has a GULL WING terminal form and EAS of 280mJ, suitable for high-power circuit designs.
IRFR9024NTRL
IRFR9024NTRL by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 62mJ EAS, operating in ENHANCEMENT MODE with 0.28 ohm RDS(on). The transistor has a max power dissipation of 38W and can withstand temperatures up to 150°C.
62 mJ
.28 ohm
44 A
IRFZ24NSTRL
IRFZ24NSTRL by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 68A IDM, 71mJ EAS, and 0.07ohm RDS(on). With a max power dissipation of 45W and operating temp of 175°C, it's suitable for high-power circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY
.07 ohm
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