Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPB80P03P4L07ATMA1
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
LOGIC LEVEL COMPATIBLE
135 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
80 A
.0069 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
320 A
YES
GULL WING
SINGLE
SWITCHING
SILICON
IPB90N06S404ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
331 mJ
60 V
90 A
.0037 ohm
NOT SPECIFIED
N-CHANNEL
360 A
IPB90N06S4L04ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A; Operating Mode: ENHANCEMENT MODE;
.0034 ohm
IPD100N06S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0035 ohm; No. of Elements: 1; Avalanche Energy Rating (EAS): 300 mJ;
ULTRA-LOW RESISTANCE
300 mJ
100 A
.0035 ohm
TO-252
400 A
IPD14N06S280ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .08 ohm; Avalanche Energy Rating (EAS): 43 mJ;
43 mJ
55 V
17 A
.08 ohm
68 A
IPD15N06S2L64ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Additional Features: ULTRA LOW RESISTANCE; Package Shape: RECTANGULAR;
ULTRA LOW RESISTANCE
19 A
.085 ohm
76 A
AEC-Q101
IPD25N06S240ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Minimum DS Breakdown Voltage: 55 V; JESD-30 Code: R-PSSO-G2;
80 mJ
29 A
.04 ohm
116 A
IPD30N03S2L10ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Finish: TIN; Package Style (Meter): SMALL OUTLINE;
150 mJ
30 A
.0146 ohm
e3
120 A
TIN
IPD30N06S223ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 150 mJ; Maximum Drain Current (ID): 30 A; Operating Mode: ENHANCEMENT MODE;
.023 ohm
IPD30N06S4L23ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Drain-Source On Resistance: .023 ohm;
18 mJ
IPD50N06S214ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Reference Standard: AEC-Q101; Transistor Element Material: SILICON;
240 mJ
50 A
.0144 ohm
200 A
IPD50N06S2L13ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 50 A; Terminal Form: GULL WING; Terminal Position: SINGLE;
.0167 ohm
IPD50N06S409ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .009 ohm; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 50 A;
87 mJ
.009 ohm
IPD50N06S4L12ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .012 ohm;
33 mJ
.012 ohm
IPD50P03P4L11ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Avalanche Energy Rating (EAS): 100 mJ; No. of Terminals: 2;
100 mJ
.0105 ohm
IPD80P03P4L07ATMA1
Infineon's IPD80P03P4L07ATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.0068 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its high current handling capability and low on-resistance.
.0068 ohm
IPD90N06S404ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; No. of Terminals: 2; Package Body Material: PLASTIC/EPOXY;
.0038 ohm
IPD90N06S407ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;
67 mJ
70 pF
175 Cel
-55 Cel
79 W
IPD90N06S4L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Maximum Drain Current (ID): 90 A; Additional Features: ULTRA LOW RESISTANCE;
IPD90N06S4L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V; Transistor Element Material: SILICON;
.0046 ohm
IPD90N06S4L06ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA-LOW RESISTANCE; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 90 A;
.0063 ohm
IPD90P03P4L04ATMA1
IPD90P03P4L04ATMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 360A IDM, and 0.0068 ohm RDS(on). It's used for SWITCHING applications in automotive (AEC-Q101) due to its high current handling capabilities and low on-resistance.
370 mJ
IPI100N08S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 810 mJ; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;
810 mJ
75 V
.0071 ohm
TO-262AB
R-PSIP-T3
3
IN-LINE
NO
THROUGH-HOLE
IPI45N06S4L08AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 97 mJ;
97 mJ
45 A
.0079 ohm
TO-262AA
180 A
IPI45P03P4L11AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; No. of Terminals: 3;
110 mJ
.0111 ohm
IPI70N10S312AKSA1
IPI70N10S312AKSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 280A IDM, and 0.0116 ohm RDS(on). It is used in power applications due to its high drain current capacity and low on-resistance. The transistor's built-in diode makes it suitable for enhancement mode operation in various electronic devices.
410 mJ
100 V
70 A
.0116 ohm
280 A
IPI80N06S208AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 450 mJ; Maximum Drain Current (ID): 80 A; Package Shape: RECTANGULAR;
450 mJ
.008 ohm
IPI80N06S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
800 mJ
.006 ohm
IPI80N06S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 152 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
152 mJ
.0057 ohm
IPI80N06S407AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 320 A;
71 mJ
IPI80P03P4L04AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Transistor Element Material: SILICON; Terminal Position: SINGLE;
.007 ohm
IPI80P03P4L07AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
.0072 ohm
IPP100N04S204AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 400 A; Minimum DS Breakdown Voltage: 40 V; Package Style (Meter): FLANGE MOUNT;
AVALANCHE RATED
40 V
.0036 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
IPP100N04S2L03AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
.0033 ohm
IPP100N08S2L07AKSA1
IPP100N08S2L07AKSA1 by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage, 0.0068 ohm RDS(ON), and 400A IDM. Ideal for power applications, it features a built-in diode, 810mJ EAS rating, and operates in enhancement mode. Suitable for high-current circuits due to its 100A ID and through-hole terminal form.
IPP100N10S305AKSA1
IPP100N10S305AKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0051 ohm Drain-Source On Resistance, and 400A Pulsed Drain Current. Ideal for power applications requiring high current handling capabilities in enhancement mode operation.
1445 mJ
.0051 ohm
IPP120N06S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE; Operating Mode: ENHANCEMENT MODE;
392 mJ
.0032 ohm
480 A
IPP120N06S4H1AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 120 A; Minimum DS Breakdown Voltage: 60 V; Case Connection: DRAIN;
1060 mJ
.0024 ohm
IPP45P03P4L11AKSA1
IPP45P03P4L11AKSA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 180A IDM, and 0.0111 ohm RDS(on). Ideal for power applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power management.
IPP50N10S3L16AKSA1
IPP50N10S3L16AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 200A Max IDM and 0.0209 ohm Max RDS(on). Widely used in automotive applications due to AEC-Q101 standard compliance and 330mJ EAS rating for robust performance.
330 mJ
.0209 ohm
IPP70N04S307AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
145 mJ
82 A
130 pF
IPP70N10S312AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP80N03S4L04AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 3; JEDEC-95 Code: TO-220AB;
95 mJ
IPP80N04S204AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 810 mJ; Package Shape: RECTANGULAR; No. of Terminals: 3;
IPP80N04S2H4AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; JEDEC-95 Code: TO-220AB;
660 mJ
.004 ohm
IPP80N04S3H4AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY;
.0048 ohm
IPP80N06S205AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 80 A; Avalanche Energy Rating (EAS): 810 mJ;
ISOLATED
IPP80N06S208AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 80 A;
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