Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STB18NM60ND
STMicroelectronics
STB18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 52A IDM, and 0.29 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 130W power dissipation.
187 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
13 A
.29 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
130 W
52 A
YES
GULL WING
SINGLE
SWITCHING
SILICON
STF18NM60ND
STF18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 30W and can handle up to 150 °C.
ISOLATED
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
30 W
NO
THROUGH-HOLE
STF6N80K5
STF6N80K5 by STMicroelectronics is a N-CHANNEL FET with 4.5A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power supplies or motor control systems operating up to 150 °C.
4.5 A
NOT SPECIFIED
25 W
FET General Purpose Power
STI33N60M2
STI33N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 190W, -50 to 150 °C operating temperature range, and 0.125 ohm Drain-Source On Resistance.
450 mJ
26 A
.125 ohm
2.5 pF
R-PSIP-T3
-50 Cel
IN-LINE
190 W
104 A
STI6N80K5
STI6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A IDM, 85mJ EAS, and 1.6Ω RDS(ON). The transistor operates in ENHANCEMENT MODE with SILICON element material and DRAIN case connection.
85 mJ
800 V
1.6 ohm
18 A
STL105NS3LLH7
STL105NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 420A IDM, 0.0055 ohm RDS(on), and 62.5W Power Dissipation in a SMALL OUTLINE package suitable for ENHANCEMENT MODE operation at -55 to 150 °C.
BULK: 3000
30 V
105 A
.0055 ohm
42 pF
R-PDSO-F5
5
-55 Cel
62.5 W
420 A
FLAT
DUAL
STL110NS3LLH7
STL110NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 480A IDM, 0.005 ohm RDS(on), and -55 °C Min Operating Temp. Its SINGLE configuration with BUILT-IN DIODE and DUAL Terminal Position make it suitable for various power management needs.
120 A
.005 ohm
480 A
STP13NM60ND
STP13NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A IDM, 162mJ EAS, and 0.38ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
162 mJ
11 A
.38 ohm
44 A
STP18NM60ND
STP18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 130W at 150 °C.
STP6N80K5
STP6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 18A IDM, and 1.6Ω RDS(on). It is used for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE in a RECTANGULAR package.
STU10N60M2
STU10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 30A max pulsed drain current and 0.6 ohm max drain-source on resistance. Operating in enhancement mode, it has a power dissipation of 85W and can withstand temperatures from -55 to 150 °C.
110 mJ
7.5 A
.6 ohm
TO-251
e3
85 W
30 A
Matte Tin (Sn)
STW18NM60ND
STW18NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.29 ohm Drain-Source On Resistance, and 150 °C Max Operating Temp.
TO-247
STB28N60M2
STB28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 88A IDM, and 0.15 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 170W.
350 mJ
22 A
.15 ohm
170 W
88 A
STDLED524
STDLED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage and 14A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as in industrial automation systems or LED lighting solutions.
525 V
4 A
2.6 ohm
TO-252
45 W
14 A
STF25N10F7
STF25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 76A IDM, and 0.035 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
100 V
19 A
.035 ohm
19 pF
175 Cel
76 A
STFILED524
STFILED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage. It features 14A IDM, 110mJ EAS, and 20W Max Power Dissipation. Ideal for applications requiring high voltage tolerance and efficient power management in various electronic circuits.
TO-281
20 W
STH140N6F7-2
STH140N6F7-2 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.0032 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and can handle up to 175 °C operating temperature.
BULK: 1000
60 V
80 A
.0032 ohm
193 pF
158 W
320 A
STL23NS3LLH7
STL23NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 368A IDM, and 0.005 ohm RDS(on). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. RECTANGULAR package style with DUAL terminals and built-in DIODE.
92 A
368 A
STL4P2UH7
STL4P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 16A IDM, and 0.18 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating at up to 150 °C.
20 V
.18 ohm
S-PDSO-F6
6
SQUARE
P-CHANNEL
16 A
STP25N10F7
STP25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, 25A ID, and 0.035 ohm RDS(on). It's used for switching applications in enhancement mode with 100A IDM. Operating temp ranges from -55 to 175 °C.
25 A
50 W
100 A
STP90N6F6
STMicroelectronics' STP90N6F6 is a N-CHANNEL FET with 90A ID and 136W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. Its metal-oxide semiconductor technology ensures efficient performance in single configurations.
90 A
136 W
STPLED524
STPLED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. It is used in power applications requiring high voltage tolerance and current handling capabilities.
STT3P2UH7
STT3P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 12A IDM, and 0.18 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features GULL WING terminals, operates at -55 °C to support various electronic devices.
3 A
R-PDSO-G6
12 A
STU6N60M2
STU6N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 18A IDM and 86mJ EAS, operating in enhancement mode. With a max power dissipation of 60W and -55 to 150 °C operating temperature range, it offers reliable performance in various industrial settings.
86 mJ
1.2 ohm
.7 pF
60 W
MATTE TIN
STULED524
STULED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling in industrial settings.
STW28N60M2
STW28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 88A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 170W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
STW40N60M2
STW40N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 136A IDM, 0.088 ohm RDS(on), and 500mJ EAS rating. The transistor operates in ENHANCEMENT MODE with SINGLE configuration and BUILT-IN DIODE, suitable for high-power switching circuits.
500 mJ
34 A
.088 ohm
136 A
SMP3003-TL-1E
Onsemi
SMP3003-TL-1E by Onsemi is a P-CHANNEL FET with 75V DS Breakdown Voltage, 400A IDM, and 0.011 ohm RDS(ON). Ideal for power applications due to its EAS of 468mJ, ENHANCEMENT MODE operation, and DRAIN case connection.
468 mJ
75 V
.011 ohm
245
400 A
30
BBS3002-TL-1E
BBS3002-TL-1E by Onsemi is a P-channel Power FET with 60V DS breakdown voltage, 400A IDM, and 0.009 ohm max RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C operating temperature.
340 mJ
.009 ohm
950 pF
90 W
SIA453EDJ-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIA453EDJ-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
5 mJ
24 A
.026 ohm
S-PDSO-N6
260
NO LEAD
IPB65R045C7ATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 227 W; Maximum Drain Current (Abs) (ID): 46 A; Maximum Operating Temperature: 150 Cel;
HIGH RELIABILITY
249 mJ
650 V
46 A
.045 ohm
227 W
212 A
TIN
STB26NM60ND
STB26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 84A max pulsed drain current and 0.175 ohm max drain-source resistance. Operating in enhancement mode, it has a 190W power dissipation rating and can withstand up to 150°C temperature.
100 mJ
21 A
.175 ohm
84 A
STF26NM60ND
STF26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 84A IDM, 100mJ EAS, and 0.175 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150°C.
35 W
STP140N8F7
STMicroelectronics' STP140N8F7 is a N-CHANNEL Power FET with 90A max drain current and 200W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
200 W
STP15N95K5
STP15N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, ideal for SWITCHING applications. It features 48A IDM and 124mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 170W and -55 to 150 °C operating temperature range, it offers high performance in various industrial settings.
124 mJ
950 V
.5 ohm
1 pF
48 A
STP26NM60ND
STP26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 84A max pulsed drain current and 0.175 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 190W and can handle up to 150 °C temperature.
STW26NM60ND
STW26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 84A max pulsed drain current, 100mJ avalanche energy rating, and 0.175 ohm max on-resistance. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150°C operating temperature.
SI7315DN-T1-GE3
Vishay Intertechnology's SI7315DN-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 10A IDM and 0.315 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE with a 9.8mJ EAS rating. Suitable for surface mount designs, it has a SQUARE package shape and DUAL terminal position.
9.8 mJ
150 V
8.9 A
.315 ohm
S-PDSO-C5
10 A
C BEND
SIHP28N65E-GE3
SIHP28N65E-GE3 by Vishay Intertechnology is a power FET with N-channel configuration and 650V min DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 84A and a max drain-source on resistance of 0.122 ohm.
691 mJ
28 A
.122 ohm
NDUL03N150CG
NDUL03N150CG by Onsemi is a Power FET with 1500V DS Breakdown Voltage, 5A IDM, and 10.5 ohm RDS(on). It is an N-CHANNEL transistor in a RECTANGULAR package suitable for high-voltage applications like power supplies and industrial controls.
34 mJ
1500 V
2.5 A
10.5 ohm
5 A
BUK968R3-40E,118
NXP Semiconductors
NXP Semiconductors' BUK968R3-40E,118 is a N-channel Power FET with 40V DS breakdown voltage and 319A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0079 ohm max on-resistance, and 96W power dissipation in a small outline package.
AVALANCHE RATED
43.9 mJ
40 V
75 A
.0079 ohm
96 W
319 A
AEC-Q101; IEC-60134
BUK9E4R4-80E,127
NXP Semiconductors BUK9E4R4-80E,127 is a N-channel Power FET with 80V DS breakdown voltage and 715A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and operates in enhancement mode.
488 mJ
80 V
.0044 ohm
TO-262AA
349 W
715 A
Tin (Sn)
BUK9E4R9-60E,127
BUK9E4R9-60E,127 from NXP is an N-channel power FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-power circuits with built-in diode functionality.
273 mJ
.0049 ohm
234 W
590 A
BUK961R5-30E,118
NXP Semiconductors BUK961R5-30E,118 is a N-channel FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1096mJ avalanche energy rating, and 0.0015 ohm max on resistance.
1096 mJ
.0015 ohm
324 W
1393 A
PMPB12UN,115
NXP Semiconductors PMPB12UN,115 is a N-CHANNEL FET with 20V DS breakdown voltage and 31A IDM. Ideal for switching applications, it has a max drain current of 7.9A, 0.018 ohm RDS(on), and operates in enhancement mode at up to 150°C.
7.9 A
.018 ohm
1.7 W
31 A
IEC-60134
BUK953R2-40E,127
BUK953R2-40E,127 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with its built-in diode and low on-resistance.
419 mJ
781 A
BUK954R4-80E,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Drain Current (ID): 120 A; Additional Features: AVALANCHE RATED;
BSP170PL6327HTSA1
Infineon Technologies' BSP170PL6327HTSA1 is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 7.6A IDM, and 0.3 ohm RDS(on). With ENHANCEMENT MODE operation and AEC-Q101 compliance, it's ideal for automotive electronics requiring high efficiency in compact designs.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
70 mJ
1.9 A
.3 ohm
R-PDSO-G4
4
7.6 A
AEC-Q101
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