Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPD50R1K4CEBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Minimum DS Breakdown Voltage: 500 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
49 mJ
SINGLE WITH BUILT-IN DIODE
500 V
3.1 A
4.8 A
1.4 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
1
2
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
42 W
8.8 A
FET General Purpose Powers
YES
GULL WING
SINGLE
SWITCHING
SILICON
IPU50R1K4CEBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3.1 A;
TO-251
R-PSIP-T3
3
IN-LINE
NO
THROUGH-HOLE
IPD50R2K0CEBTMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2.4 A
22 W
FET General Purpose Power
IPU50R2K0CEBKMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 22 W; Maximum Drain Current (Abs) (ID): 2.4 A; Maximum Drain Current (ID): 2.4 A;
IPD50R3K0CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Minimum DS Breakdown Voltage: 500 V; JESD-30 Code: R-PSSO-G2;
18 mJ
1.7 A
3 ohm
18 W
4.1 A
IPU50R3K0CEBKMA1
Infineon's IPU50R3K0CEBKMA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring 4.1A IDM and 18mJ EAS, it operates in enhancement mode with 3ohm RDS(on). With a max power dissipation of 18W and operating temp up to 150°C, it offers reliable performance in various industrial settings.
TO-251AA
IPD50R800CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .8 ohm;
83 mJ
DRAIN
5 A
.8 ohm
40 W
15.5 A
IPI084N06L3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; JESD-609 Code: e3; Package Style (Meter): IN-LINE;
LOGIC LEVEL COMPATIBLE
43 mJ
60 V
50 A
.0084 ohm
TO-262AA
e3
175 Cel
79 W
200 A
TIN
IPD50R650CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Position: SINGLE; Transistor Application: SWITCHING;
102 mJ
6.1 A
.65 ohm
TO-252AA
19 A
IPP65R150CFDAAKSA1
IPP65R150CFDAAKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It has a max IDM of 72A and EAS of 614mJ, operating in enhancement mode. With a max power dissipation of 195.3W and RDS(on) of 0.15 ohm, it's suitable for high-power systems.
HIGH RELIABILITY
614 mJ
650 V
22.4 A
.15 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
195.3 W
72 A
AEC-Q101
IPW65R150CFDAFKSA1
Infineon's IPW65R150CFDAFKSA1 is a 650V N-CHANNEL FET with 72A IDM for SWITCHING applications. It features 0.15 ohm RDS(on), 195.3W Pdiss, and operates at up to 150°C. Ideal for automotive use (AEC-Q101) due to its robust design and high energy rating of 614mJ.
TO-247
IPP65R190CFDAAKSA1
IPP65R190CFDAAKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Suitable for enhancement mode operation in high-power systems up to 150°C.
484 mJ
17.5 A
.19 ohm
151 W
57.2 A
IPW65R190CFDAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 151 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-247;
IPD50R380CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 98 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 500 V;
173 mJ
14.1 A
.38 ohm
98 W
32.4 A
IPP50R190CEXKSA1
IPP50R190CEXKSA1 by Infineon is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 63A max pulsed drain current and 0.19 ohm max drain-source resistance. The transistor operates in enhancement mode and has a package style of flange mount.
339 mJ
18.5 A
127 W
63 A
IPW50R190CEFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 127 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 18.5 A;
IPP60R380E6XKSA1
Infineon's IPP60R380E6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Featuring a single configuration with built-in diode, it offers 0.38 ohm RDS(on) and 30A IDM. This power transistor operates in enhancement mode, with 83W max power dissipation and 150°C max temp.
210 mJ
600 V
10.6 A
83 W
30 A
Not Qualified
IPD65R950CFDBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .95 ohm;
50 mJ
3.9 A
.95 ohm
36.7 W
11 A
IPB230N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; No. of Elements: 1;
13 mJ
.023 ohm
TO-263AB
120 A
IPP020N06NAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
420 mJ
29 A
.002 ohm
480 A
IPP029N06NAKSA1
IPP029N06NAKSA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 0.0029 ohm max RDS(on). Ideal for switching applications, it has 24A max drain current and 400A pulsed drain current. The transistor operates in enhancement mode with a built-in diode, making it suitable for high-power tasks.
110 mJ
24 A
.0029 ohm
400 A
SPD02N80C3BTMA1
Infineon's SPD02N80C3BTMA1 is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 6A IDM, 90mJ EAS, and 2A ID. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and RDS(ON) of 2.7Ω for efficient performance in various electronic systems.
AVALANCHE RATED, HIGH VOLTAGE
90 mJ
800 V
2 A
2.7 ohm
6 A
SPD04N80C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
170 mJ
4 A
1.3 ohm
12 A
IPI020N06NAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
IPI029N06NAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
IPP040N06NAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 320 A;
70 mJ
20 A
.004 ohm
320 A
IPP060N06NAKSA1
IPP060N06NAKSA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It has 180A IDM and 0.006 ohm RDS(ON), ideal for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, featuring a built-in DIODE and 60mJ EAS rating.
60 mJ
17 A
.006 ohm
180 A
IPA045N10N3GXKSA1
Infineon's IPA045N10N3GXKSA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 256A IDM, 540mJ EAS, and 0.0045 ohm RDS(ON). Operating at up to 175°C, it has a SILICON element and TIN finish in a FLANGE MOUNT package.
540 mJ
ISOLATED
100 V
64 A
.0045 ohm
256 A
SPU07N60C3BKMA1
Infineon's SPU07N60C3BKMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 21.9A max pulsed drain current and 0.6 ohm max drain-source resistance. Suitable for enhancement mode operation at up to 150°C, this transistor is designed for high-power tasks in various industries.
AVALANCHE RATED
230 mJ
7.3 A
.6 ohm
21.9 A
BSC020N03LSGATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Form: FLAT; Maximum Drain-Source On Resistance: .0029 ohm;
ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
180 mJ
30 V
28 A
R-PDSO-F8
8
MATTE TIN
FLAT
DUAL
AO3414L
Alpha & Omega Semiconductor
AO3414L by Alpha & Omega Semiconductor is an N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 0.05 ohm RDS(on), and ENHANCEMENT MODE operation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount designs.
20 V
4.2 A
.05 ohm
TO-236
R-PDSO-G3
STE60N105DK5
STMicroelectronics
STE60N105DK5 by STMicroelectronics is a N-CHANNEL FET with 44A ID and 625W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
44 A
625 W
STH320N4F6-2
STH320N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 200A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
300 W
STL11N4LLF5
STL11N4LLF5 by STMicroelectronics is a N-CHANNEL FET with 40V DS breakdown voltage, 44A IDM, and 0.012 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 50W power dissipation. The transistor features a built-in diode, small outline package style, and can withstand temperatures up to 150 °C.
40 V
.012 ohm
S-PDSO-N8
SQUARE
50 W
NO LEAD
STW3N170
STW3N170 by STMicroelectronics is a N-CHANNEL FET with 2.3A max drain current and 160W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various industrial and automotive uses.
2.3 A
160 W
CCS050M12CM2
Wolfspeed
Wolfspeed's CCS050M12CM2 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring 6 elements in a rectangular package style, it offers 250A max pulsed drain current and 0.036 ohm max RDS(on). Operating in enhancement mode at -40°C, this MOSFET uses silicon carbide technology and meets IEC-60747-8-4 standards.
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
1200 V
87 A
.036 ohm
R-XUFM-X28
6
28
-40 Cel
UNSPECIFIED
250 A
IEC-60747-8-4
UPPER
SILICON CARBIDE
BSP299H6327XUSA1
Infineon's BSP299H6327XUSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, 1.6A IDM, and 130mJ EAS. Ideal for power applications in automotive (AEC-Q101) and industrial sectors due to its small outline package, built-in diode, and low on-resistance of 4 ohm.
130 mJ
.4 A
4 ohm
R-PDSO-G4
4
260
1.6 A
40
NVF2955PT1G
Onsemi
NVF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A IDM, 225mJ EAS, and 0.185 ohm Drain-Source Resistance. With ENHANCEMENT MODE operation and AEC-Q101 standard compliance, it offers reliable performance in automotive electronics.
225 mJ
.185 ohm
TO-261AA
P-CHANNEL
Tin (Sn)
30
BSP123L6327HTSA1
Infineon's BSP123L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for automotive applications (AEC-Q101). Features include 1.48A max pulsed drain current, 6Ω max on resistance, and built-in diode in a small outline package.
.37 A
6 ohm
1.48 A
BSP300H6327XUSA1
Infineon's BSP300H6327XUSA1 is a N-CHANNEL FET with 800V DS Breakdown Voltage, 0.76A IDM, and 20 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include built-in diode, small outline package style, and metal-oxide semiconductor technology.
36 mJ
.19 A
20 ohm
.76 A
BSP373L6327HTSA1
Infineon's BSP373L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage and 6.8A IDM, suitable for power applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.8W. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.
45 mJ
.3 ohm
105 pF
1.8 W
6.8 A
195 ns
60 ns
BSP603S2LHUMA1
Infineon's BSP603S2LHUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for automotive applications. Featuring 21A IDM and 0.04 ohm RDS(on), this MOSFET in PLASTIC/EPOXY package offers high performance in small outline design. Enhanced mode operation and built-in diode make it suitable for various power management needs.
55 V
5.2 A
.04 ohm
21 A
DMP1018UCB9-7
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Terminal Finish: TIN SILVER COPPER;
12 V
7.6 A
5.5 A
.022 ohm
120 pF
S-PBGA-B9
e1
9
GRID ARRAY
60 A
Other Transistors
TIN SILVER COPPER
BALL
BOTTOM
BSM120D12P2C005
ROHM
ROHM BSM120D12P2C005 is a N-CHANNEL FET with 1200V DS breakdown voltage, 240A IDM, and 780W max power dissipation. Ideal for high-power SWITCHING applications due to its SERIES CONNECTED configuration and SILICON CARBIDE technology.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X8
780 W
240 A
BSP295L6327HTSA1
Infineon's BSP295L6327HTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 7.2A IDM, 0.5 ohm RDS(on), and AEC-Q101 compliance, suitable for automotive applications. The transistor has a built-in diode, operates in enhancement mode, and comes in a small outline package with gull wing terminals.
1.8 A
.5 ohm
7.2 A
BSP316PL6327HTSA1
Infineon's BSP316PL6327HTSA1 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 2.72A IDM, and 1.8Ω RDS(on). Ideal for power management applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals.
.68 A
1.8 ohm
2.72 A
Matte Tin (Sn)
BSP296L6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.1 A; Case Connection: DRAIN;
1.1 A
.7 ohm
4.4 A
BSP298H6327XUSA1
Infineon's BSP298H6327XUSA1 is a N-CHANNEL FET with 400V DS breakdown voltage, ideal for power applications. Featuring a built-in diode, it has 2A max pulsed drain current and 130mJ avalanche energy rating. This MOSFET in small outline package is suitable for automotive and industrial uses.
400 V
.5 A
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