Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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BSC080N03LSGATMA1
Infineon Technologies
BSC080N03LSGATMA1 by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. Features include 212A max pulsed drain current, 0.012 ohm max drain-source resistance, and 15mJ avalanche energy rating. Suitable for enhancement mode operation in high-power electronics due to its small outline package and high operating temperature of 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
15 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
14 A
.012 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F8
e3
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
212 A
Not Qualified
YES
TIN
FLAT
DUAL
SWITCHING
SILICON
BSZ042N04NSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; No. of Elements: 1; JESD-30 Code: R-PDSO-N8;
AVALANCHE RATED, HIGH VOLTAGE
150 mJ
40 V
40 A
.0042 ohm
R-PDSO-N8
175 Cel
160 A
NO LEAD
BSZ088N03LSGATMA1
Infineon's BSZ088N03LSGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.013 ohm RDS(on), and 25mJ EAS. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and comes in an 8-terminal SMALL OUTLINE package.
25 mJ
.013 ohm
BSZ088N03MSGATMA1
Infineon BSZ088N03MSGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0097 ohm RDS(on), and 25mJ EAS. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and comes in an 8-terminal SMALL OUTLINE package.
.0097 ohm
IPA60R280E6XKSA1
Infineon's IPA60R280E6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.28 ohm RDS(on), and 40A IDM. Ideal for switching applications, it operates in enhancement mode with a max temperature of 150°C.
284 mJ
ISOLATED
600 V
.28 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NO
THROUGH-HOLE
SINGLE
IPW60R280E6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Maximum Drain-Source On Resistance: .28 ohm; Qualification: Not Qualified;
TO-247
IPA60R190E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 59 A; Terminal Form: THROUGH-HOLE; Terminal Finish: TIN;
418 mJ
.19 ohm
59 A
IPW60R190E6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3; JEDEC-95 Code: TO-247;
IPA60R520E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .52 ohm;
153 mJ
.52 ohm
22 A
IPP60R520E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Pulsed Drain Current (IDM): 22 A; JESD-609 Code: e3;
IPA65R280C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
290 mJ
650 V
39 A
IPB65R280C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 650 V;
TO-263AB
R-PSSO-G2
2
GULL WING
IPI65R280C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; No. of Terminals: 3; Peak Reflow Temperature (C): NOT SPECIFIED;
TO-262AA
R-PSIP-T3
IN-LINE
NOT SPECIFIED
IPP65R280C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
IPW65R280C6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT;
IPB041N04NGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G2;
60 mJ
80 A
.0041 ohm
94 W
400 A
FET General Purpose Power
MATTE TIN
IPP041N04NGXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (Abs) (ID): 80 A;
IPA60R520C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
8.1 A
IPD60R520C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 22 A; No. of Terminals: 2;
TO-252
IPP60R520C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Minimum DS Breakdown Voltage: 600 V; Terminal Position: SINGLE;
IPB021N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
634 mJ
60 V
120 A
.0021 ohm
480 A
IPI024N06N3GXKSA1
IPI024N06N3GXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 0.0024 ohm RDS(on), and 120A ID. Ideal for SWITCHING applications due to its 480A IDM, 634mJ EAS rating, and ENHANCEMENT MODE operation at up to 175°C.
.0024 ohm
IPP024N06N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPI032N06N3GAKSA1
Infineon Technologies' IPI032N06N3GAKSA1 is a power FET with N-channel configuration and a built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 480A, and max operating temperature of 175°C. This transistor is commonly used for switching applications due to its low on-resistance (0.0032 ohm) and high avalanche energy rating (235 mJ).
235 mJ
.0032 ohm
IPB034N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Avalanche Energy Rating (EAS): 70 mJ;
70 mJ
.0047 ohm
IPP034N03LGXKSA1
Infineon Technologies' IPP034N03LGXKSA1 is a power FET with N-channel polarity and a built-in diode. It has a min DS breakdown voltage of 30V and can handle a max pulsed drain current of 400A. This transistor is commonly used for switching applications.
IPI040N06N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
165 mJ
90 A
.004 ohm
188 W
360 A
IPP05CN10NGXKSA1
IPP05CN10NGXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 400A IDM and 0.0054 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C.
826 mJ
100 V
100 A
.0054 ohm
IPB065N03LGATMA1
Infineon's IPB065N03LGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 350A IDM, 60mJ EAS, and 0.0095 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and 56W power dissipation.
50 A
.0095 ohm
56 W
350 A
IPB067N08N3GATMA1
Infineon's IPB067N08N3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, 320A IDM, and 0.0067 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. The PLASTIC/EPOXY package with GULL WING terminals ensures reliable performance in various environments.
80 V
.0067 ohm
136 W
320 A
IPD12CN10NGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-252AA;
FAST SWITCHING
154 mJ
67 A
.0124 ohm
TO-252AA
268 A
IPP16CN10NGXKSA1
IPP16CN10NGXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 212A and 0.0165 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE at up to 175°C temperature.
107 mJ
53 A
.0165 ohm
IPD78CN10NGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified; Transistor Element Material: SILICON;
17 mJ
13 A
.078 ohm
52 A
IPB049N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-263AB;
LOGIC LEVEL COMPATIBLE
77 mJ
IPP057N06N3GXKSA1
IPP057N06N3GXKSA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 320A IDM, and 0.0057 ohm RDS. Ideal for SWITCHING applications due to its 115W Pdiss, EAS of 77mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
.0057 ohm
115 W
IPB090N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JEDEC-95 Code: TO-263AB; Package Body Material: PLASTIC/EPOXY;
43 mJ
.009 ohm
200 A
IPP093N06N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-220AB;
.0093 ohm
IPB260N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Avalanche Energy Rating (EAS): 13 mJ; Package Style (Meter): SMALL OUTLINE;
13 mJ
27 A
.0257 ohm
108 A
IPP260N06N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 108 A;
.026 ohm
IPW50R199CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
436 mJ
500 V
17 A
.199 ohm
IPW50R250CPFKSA1
Infineon's IPW50R250CPFKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 31A and 0.25 ohm RDS(on), it operates in enhancement mode at up to 175°C. The package style is flange mount with through-hole terminals, making it suitable for various power electronics designs.
345 mJ
.25 ohm
TO-247AD
31 A
IPW50R299CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
289 mJ
12 A
.299 ohm
26 A
IPW50R350CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 10 A; Transistor Element Material: SILICON;
246 mJ
10 A
.35 ohm
IPW60R075CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
1150 mJ
.075 ohm
130 A
IPW60R099CPFKSA1
IPW60R099CPFKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a max IDM of 93A and 0.099 ohm RDS(on). Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE and can handle up to 31A drain current at 150°C.
800 mJ
.099 ohm
93 A
IPW60R125CPFKSA1
IPW60R125CPFKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a single configuration with built-in diode, ideal for switching applications. With a max IDM of 82A and 0.125 ohm RDS(on), it operates in enhancement mode at up to 175°C, making it suitable for high-power requirements.
708 mJ
25 A
.125 ohm
82 A
IPW60R165CPFKSA1
IPW60R165CPFKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 61A and 0.165 ohm max drain-source resistance. This MOSFET operates in enhancement mode and has an operating temperature of up to 175°C.
522 mJ
21 A
.165 ohm
61 A
IPW60R299CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JEDEC-95 Code: TO-247; Terminal Form: THROUGH-HOLE;
11 A
34 A
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