Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPP90R1K2C3XKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 900 V; Avalanche Energy Rating (EAS): 68 mJ;
68 mJ
SINGLE WITH BUILT-IN DIODE
900 V
5.1 A
1.2 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
10 A
Not Qualified
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
BSP372L6327HTSA1
Infineon's BSP372L6327HTSA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage and 6.8A IDM. Ideal for power applications, it features a built-in diode, 0.31 ohm RDS(on), and 45mJ EAS rating. Suitable for surface mount designs in enhancement mode operation up to 150°C.
45 mJ
DRAIN
100 V
1.7 A
.31 ohm
R-PDSO-G4
4
SMALL OUTLINE
NOT SPECIFIED
6.8 A
YES
GULL WING
DUAL
IPI90R1K2C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-262AA;
TO-262AA
R-PSIP-T3
IN-LINE
IPI90R500C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; JESD-30 Code: R-PSIP-T3; Transistor Application: SWITCHING;
388 mJ
11 A
.5 ohm
175 Cel
24 A
IPI90R800C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-262AA; Terminal Finish: TIN; Terminal Form: THROUGH-HOLE;
157 mJ
6.9 A
.8 ohm
15 A
IPI90R1K0C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 900 V;
97 mJ
5.7 A
1 ohm
12 A
IPI041N12N3GAKSA1
Infineon Technologies' IPI041N12N3GAKSA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 120V and can handle a max pulsed drain current of 480A. This transistor is commonly used for switching applications.
900 mJ
120 V
120 A
.0041 ohm
480 A
IPP041N12N3GXKSA1
IPP041N12N3GXKSA1 by Infineon is a N-CHANNEL FET with 120V DS breakdown voltage, 0.0041 ohm max RDS(on), and 480A IDM. Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is flange mount, making it suitable for high-power systems operating up to 175°C.
BSP296L6433HTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE
1.1 A
.7 ohm
4.4 A
BTS282ZAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel; No. of Terminals: 7;
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
80 A
.0095 ohm
R-PSFM-T7
7
320 A
BUZ73ALHXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 5.5 A; Minimum DS Breakdown Voltage: 200 V; Package Style (Meter): FLANGE MOUNT;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
120 mJ
200 V
5.5 A
.6 ohm
22 A
BUZ73LHXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Element Material: SILICON; Maximum Drain Current (ID): 7 A;
7 A
.4 ohm
28 A
BSO615CGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
AVALANCHE RATED
47 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
3.1 A
.11 ohm
R-PDSO-G8
2
8
N-CHANNEL AND P-CHANNEL
12.4 A
BUZ31HXKSA1
Infineon BUZ31HXKSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage and 58A IDM. Ideal for power applications, it features a 0.2 ohm Drain-Source On Resistance, 150°C Max Operating Temp, and built-in diode in a PLASTIC/EPOXY package.
200 mJ
14.5 A
.2 ohm
58 A
BUZ32H3045AATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
9.5 A
TO-263AA
R-PSSO-G2
38 A
SPA07N60C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED;
230 mJ
ISOLATED
600 V
7.3 A
21.9 A
SPP07N60C3HKSA1
SPP07N60C3HKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max IDM of 21.9A and EAS of 230mJ. The transistor operates in ENHANCEMENT MODE, with a max ID of 7.3A and 0.6 ohm Drain-Source Resistance.
SPA11N65C3XKSA1
SPA11N65C3XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 33A IDM, 340mJ EAS, and 0.38 ohm RDS(on). Operating in enhancement mode at up to 150°C, it has a single terminal position and isolated case connection.
340 mJ
650 V
.38 ohm
33 A
SPP11N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 33 A;
SPA20N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSFM-T3;
690 mJ
20.7 A
.19 ohm
62.1 A
SPP20N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
SPA03N60C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Case Connection: ISOLATED; Package Shape: RECTANGULAR;
100 mJ
3.2 A
1.4 ohm
9.6 A
SPP03N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 600 V;
SPA04N60C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
130 mJ
4.5 A
.95 ohm
13.5 A
SPP04N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
SPA08N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Operating Mode: ENHANCEMENT MODE; Additional Features: AVALANCHE RATED;
500 V
7.6 A
22.8 A
SPA12N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
11.6 A
34.8 A
SPP12N50C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
SPA15N60C3XKSA1
Infineon's SPA15N60C3XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 45A IDM and 0.28 ohm RDS(on), it operates in enhancement mode at up to 150°C. Its built-in diode and isolated case connection make it suitable for high-power systems.
460 mJ
.28 ohm
45 A
SPI15N60C3HKSA1
Infineon's SPI15N60C3HKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 45A IDM and 0.28 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with BUILT-IN DIODE makes it suitable for various power electronics designs.
SPA16N50C3XKSA1
Infineon SPA16N50C3XKSA1 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 460mJ EAS, and 0.28 ohm RDS(on). With a max operating temperature of 150°C, it has a SILICON element and ISOLATED case connection.
16 A
48 A
SPI16N50C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 48 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPP16N50C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 48 A;
SPA20N60C3XKSA1
SPA20N60C3XKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 62.1A IDM, 0.19 ohm RDS(on), and 690mJ EAS rating. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-power operations up to 150°C.
260
10
SPI20N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 62.1 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SPP20N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Additional Features: AVALANCHE RATED; No. of Terminals: 3;
SPP21N50C3HKSA1
SPP21N50C3HKSA1 by Infineon is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 63A max pulsed drain current and 0.19 ohm max drain-source resistance. This MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
21 A
63 A
SPI07N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Qualification: Not Qualified; JEDEC-95 Code: TO-262AA;
83 W
14.6 A
FET General Purpose Power
SPP07N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
SPP11N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 22 A;
SPP02N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
50 mJ
1.8 A
3 ohm
5.4 A
SPP02N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED, HIGH VOLTAGE
SPP03N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: 1.4 ohm; JESD-30 Code: R-PSFM-T3;
SPP06N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 18.6 A; Minimum DS Breakdown Voltage: 600 V; JEDEC-95 Code: TO-220AB;
6.2 A
.75 ohm
18.6 A
SPP24N60C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .16 ohm;
780 mJ
24.3 A
.16 ohm
72.9 A
SPS03N60C3BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 100 mJ; Maximum Drain-Source On Resistance: 1.4 ohm; Terminal Position: SINGLE;
TO-251AA
IPW90R120C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Terminal Finish: TIN; No. of Terminals: 3;
1940 mJ
36 A
.12 ohm
TO-247
-55 Cel
417 W
96 A
IPW90R1K0C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 12 A; Maximum Drain-Source On Resistance: 1 ohm; Terminal Finish: TIN;
TO-247AD
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