Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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UPA2735GR-E1-AT
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SINGLE
16 A
METAL-OXIDE SEMICONDUCTOR
1
150 Cel
NOT SPECIFIED
P-CHANNEL
2.5 W
Other Transistors
YES
UPA2736GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 14 A;
14 A
UPA2737GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 11 A;
11 A
UPA2738GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 10 A; Maximum Drain Current (Abs) (ID): 10 A;
10 A
UPA2812T1L-E2-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .0048 ohm;
30 V
30 A
.0048 ohm
52 W
UPA2820T1S-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
22 A
N-CHANNEL
16 W
FET General Purpose Power
UPA2821T1L-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
26 A
UPA2822T1L-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 34 A; Minimum DS Breakdown Voltage: 30 V;
34 A
.0026 ohm
UPA2825T1S-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
24 A
16.5 W
DMN3025LFG-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
HIGH RELIABILITY
DRAIN
SINGLE WITH BUILT-IN DIODE
7.5 A
.018 ohm
S-PDSO-N5
e3
5
ENHANCEMENT MODE
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
60 A
AEC-Q101
MATTE TIN
NO LEAD
DUAL
30
SWITCHING
SILICON
NTMFS4C13NT3G
Onsemi
NTMFS4C13NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 106A and EAS of 22mJ, making it suitable for high-power operations. With a low 0.0091 ohm RDS(on), this MOSFET offers efficient performance in various electronic devices.
22 mJ
38 A
7.2 A
.0091 ohm
127 pF
R-PDSO-F6
6
-55 Cel
RECTANGULAR
21.6 W
106 A
TIN
FLAT
NVB5404NT4G
NVB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 670A IDM, 1000mJ EAS, and 0.0045 ohm RDS(on). Package: PLASTIC/EPOXY, GULL WING terminals, and operates up to 175°C. AEC-Q101 compliant for automotive use.
1000 mJ
40 V
167 A
.0045 ohm
R-PSSO-G2
2
175 Cel
254 W
670 A
GULL WING
NVB5860NLT4G
NVB5860NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 660A IDM, 735mJ EAS, and 0.0036 ohm RDS(ON). With a max power dissipation of 283W and operating temperature of 175 °C, it is suitable for high-power electronic systems.
735 mJ
60 V
220 A
130 A
.0036 ohm
283 W
660 A
NVB60N06T4G
NVB60N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. Suitable for surface mount with GULL WING terminals, it has an EAS of 454mJ and AEC-Q101 standard compliance.
454 mJ
.014 ohm
180 A
NVD3055L170T4G
NVD3055L170T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 175 °C Max Operating Temp and 30mJ EAS.
30 mJ
9 A
.17 ohm
28.5 W
27 A
NTMFS4935NCT1G
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Maximum Drain Current (Abs) (ID): 93 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
93 A
NTMFS4935NCT3G
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Drain Current (Abs) (ID): 93 A;
STB32NM50N
STMicroelectronics
STB32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 190W max power dissipation. The transistor features a built-in diode, GULL WING terminals, and can withstand up to 150 °C operating temperature.
340 mJ
500 V
.13 ohm
TO-263AB
245
190 W
88 A
Matte Tin (Sn) - annealed
STF25N80K5
STF25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 78A IDM, and 0.26 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 40W Pd max. Suitable for high-power systems requiring efficient power management.
200 mJ
ISOLATED
800 V
19.5 A
.26 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
40 W
78 A
NO
THROUGH-HOLE
STF32NM50N
STF32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The transistor has a single configuration with built-in diode and comes in a PLASTIC/EPOXY package.
35 W
STH260N6F6-6
STH260N6F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
300 W
FET General Purpose Powers
STH400N4F6-2
STH400N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring robust performance.
STH400N4F6-6
STH400N4F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. This single configuration transistor is surface mountable, utilizing metal-oxide semiconductor technology.
STI360N4F6
STI360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
120 A
STP32NM50N
STP32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 88A IDM, 340mJ EAS, and 0.13 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
Matte Tin (Sn)
STP360N4F6
STP360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates at up to 175°C temperature, featuring metal-oxide semiconductor technology.
STP7N80K5
STP7N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 88mJ EAS, and 110W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it suitable for high-power electronic systems.
88 mJ
6 A
1.2 ohm
110 W
STW25N80K5
STW25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A Max Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.26 ohm Max Drain-Source On Resistance. Suitable for high-power circuits requiring efficient switching capabilities.
TO-247
250 W
STW32NM50N
STW32NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C temperature.
STW60NM50N
STW60NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 272A IDM, 551mJ EAS, and 0.043 ohm RDS(on). Operating in ENHANCEMENT MODE at up to 150 °C, it has a SILICON element and FLANGE MOUNT package style.
551 mJ
68 A
.043 ohm
272 A
STW78N65M5
STW78N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 276A pulsed drain current, 2000mJ avalanche energy rating, and 0.032ohm max on resistance. The transistor operates in enhancement mode with a max power dissipation of 450W at 150°C, making it suitable for high-power applications.
2000 mJ
650 V
69 A
.032 ohm
450 W
276 A
NDD01N60-1G
NDD01N60-1G by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance in a TO-252 package.
13 mJ
600 V
1.5 A
8.5 ohm
R-PSIP-T3
IN-LINE
46 W
NDD01N60T4G
NDD01N60T4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 46W in enhancement mode operation. Suitable for use in various electronic devices due to its N-channel configuration and built-in diode.
NDD02N40-1G
NDD02N40-1G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in circuits where N-channel MOSFETs with built-in diode are needed.
120 mJ
400 V
1.7 A
.0055 ohm
39 W
6.9 A
NDD02N40T4G
NDD02N40T4G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for power applications requiring high drain current handling capabilities.
NDT01N60T1G
Onsemi's NDT01N60T1G is a Power FET with 600V DS Breakdown Voltage, 1.5A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 2.5W in enhancement mode operation at temperatures up to 150 °C.
.4 A
TO-261AA
R-PDSO-G4
4
NVMD6N03R2G
NVMD6N03R2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.032 ohm RDS(ON). It's used for SWITCHING applications in automotive (AEC-Q101) due to its 30A IDM and 325mJ EAS ratings.
ULTRA LOW ON RESISTANCE
325 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PDSO-G8
8
Tin (Sn)
NVMFD5873NLT1G
NVMFD5873NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 190A pulsed drain current, and 0.013 ohm max on-resistance. It is used in automotive applications due to its AEC-Q101 reference standard compliance and 175°C max operating temperature.
40 mJ
58 A
.013 ohm
107 W
190 A
STD30NF04LT
STD30NF04LT by STMicroelectronics is a N-CHANNEL FET with 30A max drain current and 50W max power dissipation. Ideal for power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
50 W
STH110N10F7-2
STH110N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
110 A
150 W
STH110N10F7-6
STH110N10F7-6 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount designs, this MOSFET offers efficient power management in various electronic systems.
STH270N8F7-2
STH270N8F7-2 by STMicroelectronics is a N-channel Power FET with 80V DS breakdown voltage, 180A max drain current, and 0.0021 ohm RDS(on). It is used for switching applications in enhancement mode with 720A pulsed drain current.
ULTRA LOW RESISTANCE
1160 mJ
80 V
.0021 ohm
315 W
720 A
STL20DN10F7
STL20DN10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features 20A max drain current, 0.067 ohm RDS(on), and operates in the -55 to 150 °C temperature range. Suitable for high-power switching circuits requiring efficient performance.
100 V
20 A
12.3 A
.067 ohm
62.5 W
STL51N3LLH5
STL51N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 51A max drain current and 62.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
51 A
STP110N55F6
STMicroelectronics' STP110N55F6 is a single N-channel Power FET with 110A max drain current and 150W power dissipation. Utilizes metal-oxide semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
UPA2630T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: NICKEL PALLADIUM GOLD;
7 A
e4
NICKEL PALLADIUM GOLD
UPA2631T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
NVD3055-150T4G
NVD3055-150T4G by Onsemi is a N-channel FET with 60V DS breakdown voltage, 27A pulsed drain current, and 30mJ avalanche energy rating. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 28.8W at 175 °C.
.15 ohm
40 pF
28.8 W
75 ns
105 ns
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