Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STF11N52K3
STMicroelectronics
STF11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. The transistor features a built-in diode and can handle up to 10A drain current.
ULTRA-LOW RESISTANCE
170 mJ
SINGLE WITH BUILT-IN DIODE
525 V
10 A
.51 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
40 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STF120NF10
STF120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 164A Max Pulsed Drain Current and 0.0105 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 45W at 175 °C.
550 mJ
ISOLATED
100 V
41 A
.0105 ohm
e3
175 Cel
45 W
164 A
FET General Purpose Power
MATTE TIN
STF16N50U
STF16N50U by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60A IDM, 250mJ EAS, and 0.52 ohm RDS(on). Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals. Operating Mode: ENHANCEMENT MODE up to 150 °C.
250 mJ
500 V
15 A
.52 ohm
150 Cel
30 W
60 A
STF23NM50N
STF23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 30W at 150 °C.
254 mJ
17 A
.19 ohm
68 A
STF34NM60ND
STF34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 116A pulsed drain current, 345mJ avalanche energy rating, and 0.11 ohm max on resistance. Package style is flange mount with isolated case connection.
345 mJ
600 V
29 A
.11 ohm
40 W
116 A
STF3LN62K3
STF3LN62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 10A IDM, and 90mJ EAS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Package style is FLANGE MOUNT with THROUGH-HOLE terminals in PLASTIC/EPOXY material.
90 mJ
620 V
2.5 A
3 ohm
STFI13NM60N
STFI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
220 mJ
11 A
.36 ohm
R-PSIP-T3
IN-LINE
44 A
STFW12N120K5
STFW12N120K5 by STMicroelectronics is a N-CHANNEL FET with 1200V DS breakdown voltage, 48A IDM, and 0.69 ohm RDS. It's used for switching applications due to its 63W power dissipation, ENHANCEMENT MODE operation, and built-in diode in a RECTANGULAR package.
DRAIN
1200 V
12 A
.69 ohm
63 W
48 A
FET General Purpose Powers
STFW60N65M5
STFW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 63W at 150 °C.
1400 mJ
650 V
46 A
.059 ohm
184 A
STH300NH02L-6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 6; Maximum Drain-Source On Resistance: .0012 ohm;
1600 mJ
24 V
180 A
.0012 ohm
R-PSSO-G6
6
SMALL OUTLINE
300 W
720 A
YES
GULL WING
STI6N62K3
STI6N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 22A IDM, and 1.2ohm RDS(on). Ideal for SWITCHING applications due to its 90W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
ULTRA LOW-ON RESISTANCE
140 mJ
5.5 A
1.2 ohm
TO-262AA
90 W
22 A
Matte Tin (Sn)
STL160N3LLH6
STL160N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 140A IDM, and 0.002 ohm RDS(on). Ideal for SWITCHING applications due to its 80W Pdiss, 150 °C Tmax, and DUAL terminal position.
900 mJ
30 V
160 A
35 A
.002 ohm
R-PDSO-N5
5
80 W
140 A
NO LEAD
DUAL
STL16N1VH5
STL16N1VH5 by STMicroelectronics is a N-CHANNEL FET with 16A max drain current, 0.004 ohm max on resistance, and 64A pulsed drain current. Ideal for switching applications due to its built-in diode, small outline package style, and 12V min breakdown voltage.
350 mJ
12 V
16 A
.004 ohm
S-PDSO-N5
SQUARE
64 A
STL52N25M5
STL52N25M5 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 112A IDM, and 0.076 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
230 mJ
250 V
28 A
4.2 A
.076 ohm
R-PDSO-F5
225
110 W
112 A
FLAT
STL65DN3LLH5
STL65DN3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 76A IDM, and 0.0079 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with 60W power dissipation.
270 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
65 A
19 A
.0079 ohm
R-PDSO-N6
2
260
60 W
76 A
30
STL7NM60N
STL7NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It has a Max IDM of 5.6A and EAS of 119mJ, operating in ENHANCEMENT MODE. The transistor features a 0.9 ohm RDS(on) and can handle up to 68W power dissipation, suitable for high-power circuits.
119 mJ
5.8 A
.9 ohm
S-PQCC-N5
-55 Cel
CHIP CARRIER
68 W
5.6 A
QUAD
STL8N65M5
STL8N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 5.6A IDM, and 0.6 ohm RDS(on). It's used for switching applications in enhancement mode, with 120mJ EAS rating.
120 mJ
1.4 A
.6 ohm
2 pF
S-XQCC-N5
UNSPECIFIED
70 W
STP10NM60ND
STP10NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 32A max pulsed drain current and 0.6 ohm max drain-source resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 70W at 150 °C.
130 mJ
8 A
32 A
STP11N52K3
STP11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology.
STP210N75F6
STP210N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.0037 ohm On Resistance, and 480A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
75 V
120 A
.0037 ohm
480 A
STP23NM50N
STP23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
125 W
STP3LN62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
STP52N25M5
STP52N25M5 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 28A ID, and 0.065 ohm RDS(on). Ideal for SWITCHING applications due to its 112A IDM and 230mJ EAS. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
.065 ohm
STP5N62K3
STP5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and ENHANCEMENT MODE operation at up to 150 °C.
1.6 ohm
16.8 A
STP6N52K3
STP6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 20A IDM, and 1.2 ohm RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and 110mJ EAS ratings in ENHANCEMENT MODE operation.
110 mJ
5 A
20 A
STP80N70F4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 68 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
185 mJ
68 V
85 A
.0098 ohm
150 W
340 A
STS26N3LLH6
STS26N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0053 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE at up to 150 °C.
525 mJ
26 A
.0053 ohm
R-PDSO-G8
8
2.7 W
104 A
STU3LN62K3
STU3LN62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10A IDM, 90mJ EAS, and 2.5A ID for efficient power management in ENHANCEMENT MODE operation. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various electronic systems.
TO-251
STW23NM50N
STW23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM and 0.19 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a METAL-OXIDE SEMICONDUCTOR technology and comes in a RECTANGULAR package with THROUGH-HOLE terminals.
TO-247
STW34NM60ND
STW34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 116A max pulsed drain current and 0.11 ohm max drain-source resistance. Operating in enhancement mode, it has a 210W power dissipation rating and can withstand up to 150°C temperature.
210 W
STW36NM60N
STW36NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 29A ID. Ideal for SWITCHING applications, it has a max IDM of 116A and EAS of 345mJ. Operating in ENHANCEMENT MODE, it features 0.105 ohm Drain-Source On Resistance and can handle up to 210W power dissipation at 150 °C.
.105 ohm
1.75 pF
STW47NM60ND
STW47NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 255W and operates in ENHANCEMENT MODE up to 150 °C.
1000 mJ
.088 ohm
255 W
STW54NM65ND
STW54NM65ND by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 196A IDM, 0.065 ohm RDS(on), and 49A ID, operating in ENHANCEMENT MODE. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
850 mJ
49 A
196 A
TIN
STW60N65M5
STW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at 150 °C.
280 W
STW62NM60N
STW62NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 220A IDM, 65A ID, and 0.048 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
55 A
.048 ohm
450 W
220 A
DMS3016SSSA-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Additional Features: HIGH RELIABILITY; Operating Mode: ENHANCEMENT MODE;
HIGH RELIABILITY
9.8 A
.016 ohm
1.54 W
90 A
STB155N3H6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; No. of Terminals: 2; Case Connection: DRAIN;
80 A
.003 ohm
TO-263AB
R-PSSO-G2
320 A
STD155N3H6
STD155N3H6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.003 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 110W, this MOSFET is designed for high-power requirements.
TO-252
STH210N75F6-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
.0028 ohm
STI24NM60N
STI24NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 300mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.
300 mJ
STI300N4F6
STI300N4F6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A Drain Current, and 0.002 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temperature. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with 3 terminals.
40 V
640 A
STL100N1VH5
STL100N1VH5 by STMicroelectronics is a N-CHANNEL FET with 12V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 60W and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE, it can withstand temperatures from -55 to 150 °C.
100 A
240 pF
STL75N8LF6
STL75N8LF6 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 72A IDM, and 0.0082 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175 °C max temp. The transistor features a built-in diode, small outline package style, and 670mJ EAS rating.
670 mJ
80 V
75 A
18 A
.0082 ohm
72 A
STL80N75F6
STL80N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A Drain Current, 0.0063 ohm On Resistance, and 150 °C Operating Temperature. This PLASTIC/EPOXY transistor has a DUAL Terminal Position and is suitable for high-power circuits requiring fast switching capabilities.
.0063 ohm
74 A
STS19N3LLH6
STS19N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 76A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals.
.0075 ohm
STW56NM60N
STW56NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.06 ohm On Resistance, and 180A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W at 150 °C.
45 A
.06 ohm
STL100N6LF6
STL100N6LF6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 88A IDM, and 0.0072 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package has 5 terminals and DUAL terminal position.
60 V
.0072 ohm
88 A
NTMFD4901NFT1G
Onsemi
NTMFD4901NFT1G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a 28.8mJ EAS rating and 0.01 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.
28.8 mJ
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
23.4 A
13.5 A
.01 ohm
R-PDSO-F8
3.45 W
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