Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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BUK9MGP-55PTS,518
NXP Semiconductors
BUK9MGP-55PTS,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode operation. It supports a max drain current of 16.9 A and power dissipation of 5.2 W, making it ideal for high-efficiency applications in electronics. With a peak reflow temp of 260 °C, it's suitable for surface mount technology.
16.9 A
METAL-OXIDE SEMICONDUCTOR
3
ENHANCEMENT MODE
150 Cel
260
N-CHANNEL
5.2 W
FET General Purpose Power
YES
30
BUK9MJJ-55PTT,518
BUK9MJJ-55PTT,518 from NXP Semiconductors is an N-channel power FET ideal for high-efficiency applications. It supports a max drain current of 12.9 A and operates at up to 150 °C, making it suitable for demanding environments. Its enhancement mode design ensures reliable performance in various electronic circuits.
12.9 A
4.5 W
PMN38EN,135
PMN38EN,135 by NXP Semiconductors is an N-CHANNEL FET with 5.4A max drain current and 1.75W power dissipation in enhancement mode. Ideal for applications requiring high power efficiency at up to 150°C operating temperature, it features a metal-oxide semiconductor technology suitable for surface mount configurations.
SINGLE
5.4 A
e3
1
1.75 W
TIN
PMN49EN,135
PMN49EN,135 by NXP Semiconductors is a single N-channel Power FET with 4.6A max drain current and 1.75W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation at up to 150°C, making it suitable for various power management systems.
4.6 A
PSMN050-80PS,127
PSMN050-80PS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 22 A and power dissipation of 56 W, operating up to 175 °C. Perfect for efficient switching in various electronic devices.
22 A
175 Cel
56 W
NO
Tin (Sn)
BLF6G27LS-50BN,112
BLF6G27LS-50BN,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 12 A and operates up to 200 °C, making it suitable for demanding environments. This MOSFET excels in RF amplification and switching tasks.
12 A
200 Cel
BLF6G27LS-50BN,118
BLF6G27LS-50BN,118 from NXP Semiconductors is an N-channel enhancement mode FET designed for high-performance applications. It supports a max drain current of 12 A and operates at temperatures up to 200 °C. Ideal for RF amplification in communication systems.
BLF7G20L-200,118
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
225 Cel
BLF7G22L-130,112
NXP Semiconductors' BLF7G22L-130,112 is a N-CHANNEL FET with 28A max drain current. It operates in enhancement mode with a max temp of 225°C. Ideal for power applications requiring high current handling and efficient performance.
28 A
BLF7G27L-150P,112
BLF7G27L-150P,112 by NXP Semiconductors is a Power FET with N-CHANNEL polarity. It operates in ENHANCEMENT MODE with max drain current of 37A. Ideal for applications requiring high power and efficiency at up to 225°C operating temperature.
37 A
FET General Purpose Powers
BUK6240-75C,118
NXP Semiconductors' BUK6240-75C,118 is an N-channel Power FET with 22A max drain current and 60W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
60 W
PSMN011-30YL,115
PSMN011-30YL,115 by NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 51 A and power dissipation of 49 W, operating up to 175 °C. Ideal for power management in various electronic devices.
51 A
49 W
2SK3700(F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 5 A; Maximum Drain Current (ID): 5 A;
5 A
150 W
PSMN8R0-30YL,115
PSMN8R0-30YL,115 by NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 62 A and power dissipation of 56 W, operating up to 175 °C. Ideal for power management in automotive and industrial systems.
62 A
TPCA8010-H(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
5.5 A
45 W
2SK4021(Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 4.5 A; No. of Elements: 1;
4.5 A
20 W
2SK3466(TE24L,Q)
Toshiba's 2SK3466(TE24L,Q) is an N-CHANNEL Power FET with a max drain current of 5A and power dissipation of 50W. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies or motor control systems.
50 W
2SK2719(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3 A
125 W
2SK2744(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
45 A
2SK2847(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
8 A
85 W
TPCP8203(TE85L,F)
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.48 W; Maximum Drain Current (ID): 4.7 A; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4.7 A
1.48 W
TPCP8005-H(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.68 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 11 A;
11 A
1.68 W
TPCP8004(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.68 W; Maximum Drain Current (Abs) (ID): 8.3 A; Maximum Operating Temperature: 150 Cel;
8.3 A
TPCP8003-H(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.68 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
2.2 A
2SK2917(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 18 A;
18 A
90 W
2SK2995(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
30 A
2SK2967(F)
Toshiba's 2SK2967(F) is a N-CHANNEL Power FET with max ID of 30A and Pd of 150W. Ideal for high-power applications, it operates in enhancement mode at up to 150°C.
2SK3132(Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 50 A;
50 A
250 W
2SK3388(TE24L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 20 A; Maximum Drain Current (Abs) (ID): 20 A;
20 A
2SK4017(Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 5 A;
SSM3K310T(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Drain Current (ID): 5 A; Maximum Drain Current (Abs) (ID): 5 A;
.7 W
SSM3K316T(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
4 A
1.25 W
SSM3K315T(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 6 A;
6 A
SSM3K35MFV(TPL3)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .18 A;
.18 A
.15 W
SSM6N37CTD(TPL3)
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .14 W; Maximum Drain Current (Abs) (ID): .25 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .25 A;
.25 A
.14 W
SSM6N42FE(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .8 A; Maximum Drain Current (Abs) (ID): .8 A;
.8 A
TPCA8A04-H(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (ID): 44 A; No. of Elements: 1;
44 A
TPC8048-H(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
16 A
1.9 W
PSMN3R7-25YLC,115
PSMN3R7-25YLC,115 from NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 97 A and power dissipation of 64 W, operating up to 175 °C. Ideal for power management in automotive and industrial systems.
97 A
64 W
BLF7G22L-160,112
BLF7G22L-160,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-performance applications. It supports a max drain current of 36 A and operates at temperatures up to 200 °C. Ideal for power amplification in RF and industrial systems.
36 A
PSMN1R7-25YLC,115
PSMN1R7-25YLC,115 from NXP Semiconductors is an N-channel MOSFET designed for high-efficiency power applications. It supports a max drain current of 100 A and power dissipation of 164 W, operating up to 175 °C. Ideal for surface mount designs in automotive and industrial sectors.
100 A
164 W
PSMN3R2-25YLC,115
PSMN3R2-25YLC,115 from NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency power applications. It supports a max drain current of 100 A and operates at temperatures up to 175 °C, making it ideal for demanding environments. Its surface mount configuration ensures easy integration into various electronic devices.
79 W
PSMN3R7-30YLC,115
PSMN3R7-30YLC,115 by NXP Semiconductors is a single N-channel MOSFET ideal for power applications. It supports a max drain current of 100 A and power dissipation of 79 W, operating up to 175 °C. Perfect for efficient switching in various electronic devices.
IRF7807VD2TRPBF
International Rectifier
IRF7807VD2TRPBF by International Rectifier is a single N-channel power FET with a max drain current of 8.3A and max power dissipation of 2.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
2.5 W
MATTE TIN
BLF7G22L-100P,118
BLF7G22L-100P,118 from NXP Semiconductors is an N-channel enhancement mode MOSFET designed for high-performance applications. It operates at a max temp of 200 °C and withstands peak reflow temps up to 260 °C for 30s. Ideal for power management in RF amplifiers and industrial systems.
BLF7G22L-100P,112
BLF7G22L-100P,112 by NXP Semiconductors is an N-channel enhancement mode MOSFET designed for high-performance applications. It operates at a max temp of 200 °C and withstands peak reflow temps up to 260 °C for 30s. Ideal for power management in RF amplifiers and industrial systems.
PSMN5R9-30YL,115
PSMN5R9-30YL,115 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 78 A and power dissipation of 63 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.
78 A
63 W
2SK3431-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 83 A;
83 A
100 W
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