Loading...

PMN38EN,135

NXP Semiconductors

PMN38EN,135 by NXP Semiconductors

PMN38EN,135 by NXP Semiconductors is an N-CHANNEL FET with 5.4A max drain current and 1.75W power dissipation in enhancement mode. Ideal for applications requiring high power efficiency at up to 150°C operating temperature, it features a metal-oxide semiconductor technology suitable for surface mount configurations.

Median Price

$0.287

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 60,300 parts In-Stock

1+ parts

-

100+ parts

$0.298

1k+ parts

$0.247

10k+ parts

$0.220

60,300

-

$0.298

$0.247

$0.220

Verical

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.276

50,000

-

-

-

$0.276

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,852 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

-

4,852

$0.124

-

-

-

Vyrian

USA . 7,981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,981

-

-

-

-

Anansix

USA . 1,734 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,734

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 398 parts In-Stock

1+ parts

$0.117

100+ parts

-

1k+ parts

-

10k+ parts

-

398

$0.117

-

-

-

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.594

100+ parts

$1.451

1k+ parts

$1.307

10k+ parts

-

20

$1.594

$1.451

$1.307

-

AZTECH Wire

Italy . 555 parts In-Stock

1+ parts

$9.700

100+ parts

-

1k+ parts

-

10k+ parts

-

555

$9.700

-

-

-

Continental Prestige Electronics

USA . 60,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.156

10k+ parts

-

60,300

-

-

$0.156

-

UNI Independent Distributors

Spain . 7,421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,421

-

-

-

-

Overview

Discover the cutting-edge PMN38EN,135 Power Field Effect Transistor by NXP Semiconductors, designed to revolutionize your electronic projects with its N-CHANNEL configuration and ENHANCEMENT MODE operating mode. This high-quality semiconductor offers a maximum drain current of 5.4 A and a maximum power dissipation of 1.75 W, making it ideal for a wide range of applications. Experience the superior performance and reliability that only NXP Semiconductors can deliver, and take your projects to the next level with the PMN38EN,135.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used in low-side switch applications, making this product suitable for various power control and amplification tasks.

Configuration: SINGLE

A single configuration simplifies the circuit design and reduces component count, making this FET easy to integrate into different systems.

Surface Mount: YES

Surface mount packaging allows for easy and efficient assembly onto PCBs, saving space and enabling higher component density.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control and efficiency in switching applications, enhancing overall performance of the device.

Maximum Drain Current (Abs) (ID): 5.4 A

The high maximum drain current capability of 5.4 A allows this FET to handle moderate to high power applications, ensuring reliable operation.

Maximum Power Dissipation (Abs): 1.75 W

With a maximum power dissipation of 1.75 W, this FET can efficiently dissipate heat generated during operation, preventing overheating and ensuring longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, making this FET suitable for a wide range of applications requiring precise and stable performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this FET to withstand elevated temperatures, making it ideal for industrial and automotive applications.

Terminal Finish: TIN

The terminal finish of TIN provides good solderability and corrosion resistance, ensuring robust connections and reliability in various operating environments.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow processes, guaranteeing secure and durable connections during manufacturing.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient and reliable soldering, ensuring high-quality connections and performance of the FET.

Technical Specifications

Power Field Effect Transistors (FET) PMN38EN,135 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.4 A

Maximum Drain Current (ID):

5.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMN38EN,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7