Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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EFC6602R-A-TR
Onsemi
EFC6602R-A-TR by Onsemi is an N-channel Power FET with 18A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150 °C. With surface mount capability, it suits various electronic designs needing reliable performance.
18 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
260
N-CHANNEL
2 W
FET General Purpose Power
YES
30
VQ1001P-E3
Vishay Intertechnology
Vishay Intertechnology's VQ1001P-E3 is an N-CHANNEL Power FET with 0.83A max drain current and 2W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in power management systems or voltage regulation circuits. Operating up to 150°C, it utilizes metal-oxide semiconductor technology for efficient performance.
.83 A
FET General Purpose Powers
NO
IRFH7921TR2PBF
International Rectifier
IRFH7921TR2PBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.1W. This surface mount transistor has a package style of SMALL OUTLINE and can handle temperatures from -55 to 150°C.
29 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
34 A
15 A
.0085 ohm
120 pF
R-PDSO-F5
5
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
3.1 W
120 A
FLAT
DUAL
SWITCHING
SILICON
BLF8G20LS-400PVQ
NXP Semiconductors
N-CHANNEL; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel;
225 Cel
AOT284L
Alpha & Omega Semiconductor
AOT284L by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 211mJ EAS, and 0.0057 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175 °C.
211 mJ
80 V
105 A
.0057 ohm
48 pF
TO-220AB
R-PSFM-T3
3
175 Cel
FLANGE MOUNT
150 W
400 A
THROUGH-HOLE
SINGLE
AOTF5N50FD
AOTF5N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 5A ID and 35W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems operating at temperatures up to 150°C.
5 A
35 W
AOD2N100
AOD2N100 by Alpha & Omega Semiconductor is a single N-channel power FET with 2A max drain current and 83W max power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power supplies and motor control systems.
2 A
83 W
NVMFD5853NT1G
NVMFD5853NT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
53 A
e3
58 W
MATTE TIN
NVMFD5853NWFT1G
NVMFD5853NWFT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling such as motor control and power supplies.
TIN
NTTFS4965NFTWG
NTTFS4965NFTWG by Onsemi is a single N-channel Power FET with 64A max drain current and 22.73W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as automotive electronics and industrial control systems.
64 A
22.73 W
NTMFS4965NFT3G
NTMFS4965NFT3G by Onsemi is a N-CHANNEL FET with 65A max drain current and 22.73W power dissipation. Ideal for power applications, it operates in enhancement mode with a max temp of 150 °C. Suitable for surface mount configurations, this MOSFET is widely used in high-power electronic devices.
65 A
NTLLD4951NFTWG
NTLLD4951NFTWG by Onsemi is an N-CHANNEL Power FET with 13A max drain current and 3.2W max power dissipation. Ideal for applications requiring high power efficiency in a compact form factor, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount capability for easy integration.
13 A
3.2 W
BMS4007-1E
BMS4007-1E by Onsemi is a N-CHANNEL FET with 60A ID and 30W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with a single configuration design.
60 A
30 W
Tin (Sn)
PMZ290UNYL
PMZ290UNYL by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 1 A, power dissipation of 2.7 W, and operates up to 150 °C. Its surface mount design enhances versatility in circuit integration.
1 A
2.7 W
PSMN3R9-60XSQ
PSMN3R9-60XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 75 A and power dissipation of 55 W, operating up to 175 °C. Perfect for automotive and industrial uses.
75 A
55 W
SFT1431-W
SFT1431-W by Onsemi is a N-CHANNEL Power FET with 11A ID and 15W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with TIN BISMUTH terminal finish.
11 A
e6
15 W
TIN BISMUTH
NTMFS4C09NT1G-001
NTMFS4C09NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 150 °C. Suitable for surface mount configurations, this MOSFET is commonly used in power management systems.
52 A
25.5 W
BLC6G22LS-75,112
BLC6G22LS-75,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and operates up to 150 °C, making it ideal for high-performance power applications in compact designs.
BLF1822-10,112
BLF1822-10,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it suitable for demanding environments in RF amplification. This MOSFET excels in efficiency and thermal performance.
2.2 A
200 Cel
BLF2043,112
BLF2043,112 by NXP Semiconductors is a single N-channel MOSFET designed for high-performance applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for power management in RF amplifiers and industrial systems.
BLF2043,135
BLF2043,135 by NXP Semiconductors is an N-channel MOSFET designed for high-performance applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for power amplification in RF circuits. This single configuration FET ensures efficient energy management in various electronic devices.
BLF3G22-30,135
BLF3G22-30,135 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 12 A and operates up to 150 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching applications.
12 A
BLF404,115
NXP Semiconductors BLF404,115 is a single N-CHANNEL FET with 1.5A max drain current and 8.3W power dissipation. Ideal for applications requiring high-power amplification in enhancement mode operation up to 200°C, utilizing metal-oxide semiconductor technology for efficient performance.
1.5 A
8.3 W
BUK1M200-50SDLD,51
BUK1M200-50SDLD,51 from NXP Semiconductors is an N-channel power FET ideal for efficient switching applications. It supports a max drain current of 1.7 A and power dissipation of 9.4 W, operating up to 150 °C. This MOSFET is perfect for compact electronic designs requiring reliable performance.
1.7 A
9.4 W
BUK7619-100B,118
BUK7619-100B,118 from NXP is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 64 A and power dissipation of 200 W, operating up to 175 °C. Perfect for efficient switching in power management systems.
245
200 W
BUK763R4-30B,118
BUK763R4-30B,118 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.
255 W
PHD18NQ10T,118
PHD18NQ10T,118 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and power dissipation of 79 W, making it ideal for high-efficiency power applications. With an operating temp up to 175 °C, it's perfect for demanding environments.
79 W
SFT1443-TL-W
The Onsemi SFT1443-TL-W is a N-CHANNEL FET with 9A max drain current and 19W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
9 A
19 W
STP16N60M2
STMicroelectronics
STP16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A max drain current and 110W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies due to its metal-oxide semiconductor technology and single configuration in enhancement mode.
110 W
STU16N60M2
STU16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A ID and 110W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies or motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C.
TK10A60W,S4VX
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
9.7 A
TK31N60W,S1VF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 30.8 A;
30.8 A
230 W
BUK7Y9R9-80E/CX
BUK7Y9R9-80E/CX from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 89 A, power dissipation up to 195 W, and operates at temperatures up to 175 °C, ideal for high-performance applications.
89 A
195 W
TK13E25D,S1X(S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 102 W; Maximum Drain Current (Abs) (ID): 13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
102 W
TK16A60W5,S4VX
Toshiba's TK16A60W5,S4VX is an N-CHANNEL FET with 15.8A ID, 40W power dissipation, and 150°C max operating temp. Ideal for power applications requiring high drain current and efficient heat dissipation in enhancement mode operation.
15.8 A
40 W
TK100L60W,VQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 797 W; No. of Elements: 1; Maximum Drain Current (ID): 100 A;
100 A
797 W
NTMKB4895NT1G
The Onsemi NTMKB4895NT1G is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features 0.006 ohm Drain-Source Resistance and 80mJ EAS rating. This ENHANCEMENT MODE transistor in CHIP CARRIER package is suitable for high-power circuit designs.
80 mJ
.006 ohm
R-XBCC-N2
2
UNSPECIFIED
CHIP CARRIER
NOT SPECIFIED
Not Qualified
NO LEAD
BOTTOM
NTMKE4891NT1G
NTMKE4891NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 210A IDM and 0.0026 ohm RDS(ON), suitable for high-power operations. With METAL-OXIDE SEMICONDUCTOR technology and SILICON material, it offers efficient performance in ENHANCEMENT MODE operation.
184 mJ
25 V
26.7 A
.0026 ohm
R-XBCC-N3
210 A
RSD050N06TL
ROHM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
60 V
.14 ohm
R-PSSO-G2
e2
TIN COPPER
GULL WING
10
RSD150N06TL
ROHM RSD150N06TL is a N-CHANNEL FET with 60V DS breakdown voltage, 15A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 20W.
.051 ohm
20 W
30 A
STI16N65M5
STI16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for SWITCHING applications due to its 90W power dissipation and ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
ULTRA-LOW RESISTANCE
200 mJ
650 V
.279 ohm
TO-262AA
R-PSIP-T3
IN-LINE
90 W
48 A
Matte Tin (Sn)
STW16N65M5
STW16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 12A ID and 90W power dissipation. Package style is flange mount with matte tin finish, suitable for high temperature environments up to 150 °C.
TO-247
FDD14AN06LA0_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD14AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 9.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 55mJ and can handle up to 125W power dissipation at temperatures ranging from -55°C to 175°C.
55 mJ
9.5 A
.0116 ohm
TO-252AA
125 W
AEC-Q101
NTMD5838NLR2G
NTMD5838NLR2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 35A IDM, and 0.0308 ohm RDS(on). It is used in applications requiring high power dissipation up to 3W, such as power management systems and motor control circuits.
20 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
8.9 A
7.4 A
.0308 ohm
R-PDSO-G8
8
3 W
35 A
NTMFS5832NLT1G
NTMFS5832NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 443A pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in small outline packages.
134 mJ
111 A
20 A
.0065 ohm
96 W
443 A
NVMFD5877NLT1G
NVMFD5877NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS. It's used for SWITCHING applications due to its 2 ELEMENTS WITH BUILT-IN DIODE configuration. Operating at 175°C max temp, it's ideal for high-power requirements in various electronic devices.
10.5 mJ
17 A
6 A
.06 ohm
R-PDSO-F6
6
23 W
74 A
NVMFD5877NLT3G
NVMFD5877NLT3G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 74A Max Pulsed Drain Current, 10.5mJ Avalanche Energy Rating, and 0.06ohm Max Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power switching circuits.
NP160N04TUJ-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .002 ohm;
160 A
.002 ohm
R-PSSO-G6
250 W
640 A
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