Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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PSMN5R6-100XS,127
NXP Semiconductors
PSMN5R6-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 61 A and power dissipation of 60 W, operating up to 175 °C. Perfect for efficient energy management in various electronic devices.
SINGLE
61 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
60 W
FET General Purpose Power
NO
AOB10N60L
Alpha & Omega Semiconductor
AOB10N60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 10A max drain current and 250W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies due to its single configuration and surface mount capability.
10 A
150 Cel
250 W
YES
AOW4S60
AOW4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 83W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
4 A
83 W
AOWF4S60
AOWF4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
25 W
PMT29EN,115
PMT29EN,115 by NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. Its surface mount design enhances efficiency in compact electronic devices.
6 A
e3
260
8.33 W
TIN
30
PMT29EN,135
PMT29EN,135 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. This surface-mount transistor is perfect for efficient energy management in electronic devices.
BUK653R3-30C,127
The BUK653R3-30 °C,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 100 A and power dissipation of 204 W, operating efficiently up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
100 A
204 W
Tin (Sn)
NX3008NBKT,115
NX3008NBKT,115 by NXP Semiconductors is a single N-channel FET with 0.35A max drain current and 0.3W power dissipation. Ideal for applications requiring enhancement mode operation at up to 150°C, such as power management systems in various electronic devices.
.35 A
.3 W
PMT21EN,115
PMT21EN,115 from NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 7.4 A and power dissipation of 8.33 W, operating up to 150 °C. This surface-mount FET excels in enhancement mode configurations.
7.4 A
PSMN7R0-100XS,127
PSMN7R0-100XS,127 from NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 55 A and power dissipation of 57 W, operating up to 175 °C. This makes it suitable for high-efficiency designs in automotive and industrial sectors.
55 A
57 W
PSMN9R0-25YLC,115
PSMN9R0-25YLC,115 from NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 46 A and power dissipation of 34 W, operating up to 175 °C. This surface-mount FET is perfect for efficient energy management in various devices.
46 A
34 W
SSM3K15ACT(TPL3)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
.1 A
.1 W
TK12J60U(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 144 W; Maximum Drain Current (Abs) (ID): 12 A; Maximum Operating Temperature: 150 Cel;
12 A
144 W
TK20J60U(F)
Toshiba's TK20J60U(F) is an N-CHANNEL Power FET with 20A Drain Current and 190W Power Dissipation. Ideal for high-power applications, it operates in Enhancement Mode at up to 150°C, making it suitable for power supplies and motor control systems.
20 A
190 W
TK15J60U(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (Abs) (ID): 15 A; Maximum Drain Current (ID): 15 A;
15 A
170 W
SSM6K411TU(TE85L,F)
Toshiba's SSM6K411TU(TE85L,F) is a N-CHANNEL FET with 10A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies or motor control systems.
2 W
SSM4K27CT(TPL3)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.5 A
.4 W
BLF6G22L-40P,112
BLF6G22L-40P,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 16 A and operates at temperatures up to 200 °C. This MOSFET is perfect for efficient power management in RF amplifiers.
16 A
200 Cel
BLF6G22L-40P,118
BLF6G22L-40P,118 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 16 A and operates up to 200 °C, making it suitable for demanding environments. This MOSFET excels in RF amplification and switching tasks.
PSMN016-100XS,127
PSMN016-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 32.1 A and power dissipation of 46.1 W, operating up to 175 °C. This MOSFET is perfect for efficient energy conversion in various electronic devices.
32.1 A
46.1 W
PSMN010-25YLC,115
PSMN010-25YLC,115 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 39 A and operates at temperatures up to 175 °C, making it ideal for demanding power management tasks. Its surface mount configuration enhances versatility in circuit design.
39 A
30 W
PSMN027-100XS,127
PSMN027-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 23.4 A and power dissipation of 41.1 W, operating up to 175 °C. This MOSFET excels in efficient energy conversion and control.
23.4 A
41.1 W
2SK3816-DL-E
Onsemi
The Onsemi 2SK3816-DL-E is a N-CHANNEL Power FET with 40A max drain current and 50W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
40 A
e6
50 W
Tin/Bismuth (Sn/Bi)
2SK3820-DL-E
2SK3820-DL-E by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 104A and EAS of 84.5mJ, making it suitable for high-power tasks. With an ID of 26A and 0.08ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C ambient temperature.
84.5 mJ
100 V
26 A
.08 ohm
110 pF
R-PSIP-T3
3
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
1.65 W
104 A
THROUGH-HOLE
SWITCHING
SILICON
PSMN013-100XS,127
PSMN013-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 35.2 A and power dissipation of 48.4 W, operating up to 175 °C. Perfect for efficient energy conversion in various electronic devices.
35.2 A
48.4 W
BLF7G27L-135,112
BLF7G27L-135,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 28 A and operates up to 200 °C, making it suitable for RF amplification and industrial control systems. Its MOS technology ensures efficient performance in demanding environments.
28 A
BLF7G27L-135,118
BLF7G27L-135,118 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 28 A and operates up to 200 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching tasks.
PSMN012-25YLC,115
PSMN012-25YLC,115 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 33 A and operates at temperatures up to 175 °C, making it ideal for demanding power management tasks. Its surface mount configuration ensures easy integration into compact designs.
33 A
26 W
AOB1608L
AOB1608L by Alpha & Omega Semiconductor is an N-CHANNEL Power FET with a 60V DS Breakdown Voltage. It features a built-in diode, 256A IDM, and 0.0073 ohm RDS(on), making it ideal for SWITCHING applications. With a max power dissipation of 333W and operating temperature range from -55 to 175 °C, this MOSFET is suitable for high-power electronic systems.
638 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
140 A
11 A
.0073 ohm
80 pF
TO-263AB
R-PSSO-G2
2
-55 Cel
SMALL OUTLINE
333 W
256 A
GULL WING
AOD4454
AOD4454 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 0.11 ohm Max Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 100W and can withstand temperatures from -55 to 175 °C.
1.3 mJ
150 V
.11 ohm
31 pF
TO-252
100 W
PMV90EN,215
PMV90EN,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 2.1 A and operates at temperatures up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into modern circuits.
2.1 A
2SK4066-DL-E
The Onsemi 2SK4066-DL-E is a N-CHANNEL Power FET with 100A max drain current and 90W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
90 W
2SK4065-DL-E
The Onsemi 2SK4065-DL-E is a N-CHANNEL Power FET with 100A max drain current and 90W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
BF1118R,215
BF1118R,215 by NXP Semiconductors is an N-channel depletion mode FET designed for efficient power management. It supports a max drain current of 0.01 A and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount configuration ensures easy integration into compact designs.
.01 A
DEPLETION MODE
BF1118,215
BF1118,215 by NXP Semiconductors is an N-channel depletion mode FET designed for efficient power management. It supports a max drain current of 0.01 A and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount configuration ensures easy integration into compact designs.
BF1118W,115
BF1118W,115 by NXP Semiconductors is an N-channel depletion mode FET designed for efficient power management. It supports a max drain current of 0.01 A and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount configuration ensures easy integration into compact designs.
2SK3817-DL-E
The Onsemi 2SK3817-DL-E is a N-CHANNEL FET with 60A max drain current and 65W power dissipation. It operates in enhancement mode, suitable for high-power applications. With surface mount capability and metal-oxide semiconductor technology, it can handle up to 150 °C operating temperature.
60 A
65 W
BLP7G22-10,135
BLP7G22-10,135 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It features a max operating temp of 150 °C and surface mount configuration, making it ideal for high-efficiency power applications in compact designs.
PMR290UNE,115
PMR290UNE,115 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 0.7 A and operates up to 150 °C, ensuring reliability in demanding environments. Its surface mount design simplifies integration into compact circuits.
.7 A
.77 W
AOTF240L
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (ID): 85 A; No. of Elements: 1;
85 A
41 W
AOB290L
AOB290L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 140A ID and 500W power dissipation. Ideal for applications requiring high drain current and power, such as power supplies or motor control systems. Operating in enhancement mode, it can handle up to 175°C temperature.
500 W
AON6234
AON6234 by Alpha & Omega Semiconductor is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 220A and an avalanche energy rating of 125mJ. This transistor is commonly used for switching applications.
125 mJ
40 V
.005 ohm
77 pF
R-PDSO-F8
8
220 A
FLAT
DUAL
AON6411
AON6411 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 340A IDM and 245mJ EAS, operating in ENHANCEMENT MODE at -55 to 150 °C. The METAL-OXIDE SEMICONDUCTOR technology ensures 0.0036 ohm RDS(ON) and 1395pF Crss for efficient performance.
245 mJ
20 V
.0036 ohm
1395 pF
P-CHANNEL
156 W
340 A
AON7242
AON7242 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 255A and EAS of 115mJ, suitable for high-power operations. With an operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.
115 mJ
50 A
.0058 ohm
70 pF
S-PDSO-N8
SQUARE
255 A
NO LEAD
AOTF12N30
AOTF12N30 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM and 430mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 36W and -55 to 150 °C temperature range, it offers reliable performance in various electronic systems.
430 mJ
ISOLATED
300 V
11.5 A
.42 ohm
11 pF
TO-220AB
R-PSFM-T3
FLANGE MOUNT
36 W
29 A
UPA1970TE-T1-AT
Renesas Electronics
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
2.2 A
1.15 W
MATTE TIN
ECH8659-M-TL-H
ECH8659-M-TL-H by Onsemi is an N-CHANNEL Power FET with 7A max drain current and 1.5W max power dissipation. It operates in enhancement mode with a max temp of 150 °C, making it suitable for high-power applications like motor control and power supplies.
7 A
1.5 W
CPH6444-TL-E
CPH6444-TL-E by Onsemi is a N-CHANNEL FET with 4.5A ID and 1.6W power dissipation. Ideal for applications requiring high drain current capabilities, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount configuration for easy installation.
4.5 A
1.6 W
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