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AOB1608L

Alpha & Omega Semiconductor

AOB1608L by Alpha & Omega Semiconductor

AOB1608L by Alpha & Omega Semiconductor is an N-CHANNEL Power FET with a 60V DS Breakdown Voltage. It features a built-in diode, 256A IDM, and 0.0073 ohm RDS(on), making it ideal for SWITCHING applications. With a max power dissipation of 333W and operating temperature range from -55 to 175 °C, this MOSFET is suitable for high-power electronic systems.

Median Price

$1.162

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Nova Conductors

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TME

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$1.270

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$0.930

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$0.880

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Vyrian

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Advanced Electronics

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Continental Prestige Electronics

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Microchip USA

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AZTECH Wire

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Overview

Unlock the power of innovation with the AOB1608L by Alpha & Omega Semiconductor. Designed for switching applications, this N-channel Power FET offers unparalleled performance and reliability. With a minimum DS breakdown voltage of 60V and maximum drain current of 140A, this transistor is a game-changer in the industry. The single configuration with built-in diode ensures seamless operation, while the small outline package makes it ideal for space-constrained designs. Trust Alpha & Omega Semiconductor for cutting-edge technology that delivers efficiency and longevity. Upgrade your systems with the AOB1608L today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer improved performance and efficiency in switching applications compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and allows for more efficient power management.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance and fast response times.

Surface Mount: YES

The surface-mount design allows for easy installation and space-saving in compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltage applications with ease.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a secure and standardized fit in circuits.

Terminal Form: GULL WING

The gull wing terminal form makes soldering easier and more reliable during assembly.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for improved control over the transistor's switching characteristics.

Maximum Pulsed Drain Current (IDM): 256 A

This high pulsing current rating enables the transistor to handle sudden surges of power without compromising performance.

Avalanche Energy Rating (EAS): 638 mJ

The high avalanche energy rating ensures the transistor can withstand energy spikes without damage.

Maximum Drain Current (Abs) (ID): 140 A

This high drain current rating allows for efficient power handling in demanding applications.

No. of Terminals: 2

The two terminals simplify circuit connections and provide easy integration into existing designs.

Maximum Power Dissipation (Abs): 333 W

The high power dissipation rating allows the transistor to handle heat generated during operation effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and provides versatility for various circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers improved reliability and performance for the transistor.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated heat levels without performance degradation.

Transistor Element Material: SILICON

Silicon material provides stability and efficiency in transistor operation for long-term reliability.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the transistor to function in extreme temperature conditions.

Maximum Drain Current (ID): 11 A

This high drain current rating ensures the transistor can handle high current loads without issues.

Maximum Drain-Source On Resistance: 0.0073 ohm

The low drain-source on resistance minimizes power loss and improves efficiency in circuit operation.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and reduces the chances of errors during installation.

Case Connection: DRAIN

The drain case connection provides a secure and reliable grounding point for the transistor.

Maximum Feedback Capacitance (Crss): 80 pF

The low feedback capacitance minimizes signal distortion and improves overall performance in high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) AOB1608L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor

Specs

Avalanche Energy Rating (EAS):

638 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

140 A

Maximum Drain Current (ID):

11 A

Maximum Drain-Source On Resistance:

.0073 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

80 pF

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

256 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AOB1608L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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