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BLP7G22-10,135

NXP Semiconductors

BLP7G22-10,135 by NXP Semiconductors

BLP7G22-10,135 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It features a max operating temp of 150 °C and surface mount configuration, making it ideal for high-efficiency power applications in compact designs.

Median Price

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4

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1k+

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Vyrian

USA . 2,717 parts In-Stock

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Digiode

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Anansix

USA . 822 parts In-Stock

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Netsource Technology, Inc.

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Native Components

USA . 818 parts In-Stock

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$0.042

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.474

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AZTECH Wire

Italy . 1,156 parts In-Stock

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One Stop Electronics

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Component Stockers USA

USA . 700 parts In-Stock

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$99.990

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UNI Independent Distributors

Spain . 4,902 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Northwest PG Solutions

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Overview

Unlock unparalleled performance and reliability with the BLP7G22-10,135 from NXP Semiconductors. As a leader in innovative technology, NXP delivers this high-quality power FET, perfect for various applications from automotive to industrial solutions. With its efficient enhancement mode design and superior thermal management, customers benefit from enhanced energy efficiency, longevity, and robust performance—ensuring your projects thrive under demanding conditions.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs are typically more efficient and offer higher electron mobility, making them suitable for applications requiring fast switching and higher currents.

Configuration: SINGLE

Single configuration simplifies design and integration into circuits, making it easier to manage and control within various applications.

Surface Mount: YES

Surface mount technology minimizes space on the PCB, allowing for more compact designs and improved thermal performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs provide better control and higher output with minimal leakage current when off, making them ideal for low-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology allows for high density and low power consumption, making it suitable for a wide range of digital and analog applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the FET to function reliably in harsh environments, enhancing its usability in automotive and industrial applications.

Technical Specifications

Power Field Effect Transistors (FET) BLP7G22-10,135 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLP7G22-10,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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