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PMV90EN,215

NXP Semiconductors

PMV90EN,215 by NXP Semiconductors

PMV90EN,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 2.1 A and operates at temperatures up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into modern circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,527 parts In-Stock

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Anansix

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Digiode

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AZTECH Wire

Italy . 718 parts In-Stock

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One Stop Electronics

USA . 1,073 parts In-Stock

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$21.050

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Ampacity Inc.

Singapore . 860 parts In-Stock

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UNI Independent Distributors

Spain . 3,516 parts In-Stock

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Corphita

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Metaverse IC Inc.

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Overview

Unlock the power of efficiency with the PMV90EN,215 from NXP Semiconductors. Renowned for its reliability and innovation, NXP delivers a high-quality N-channel FET that excels in various applications, from consumer electronics to automotive systems. With superior thermal performance and robust capabilities, this surface-mount transistor provides designers with enhanced flexibility and performance, ensuring your projects achieve their highest potential. Experience unmatched value and trust in every application!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility, leading to better performance in high-speed applications.

Configuration: SINGLE

A single FET configuration simplifies circuit design and reduces space requirements on PCBs.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of PCB real estate, making it ideal for modern applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are commonly used because they provide higher input impedance and lower power consumption when in 'off' state.

Maximum Drain Current (Abs) (ID): 2.1 A

With a maximum drain current of 2.1 A, this FET can handle a variety of load conditions, making it versatile for many applications.

Maximum Power Dissipation (Abs): 2 W

A maximum power dissipation of 2 W indicates that this FET can handle moderate power levels, suitable for many electronic circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology allows for high density, low power, and high-speed operation, which are critical parameters in many electronic designs.

Maximum Operating Temperature: 150 °C

This FET is rated for high operating temperatures, which ensures reliability and stability in demanding environments.

Terminal Finish: TIN

Tin plating provides good solderability and corrosion resistance, enhancing the longevity and reliability of the component in usage.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with modern surface mount assembly processes, facilitating efficient manufacturing.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C accommodates most soldering processes commonly used in electronics, ensuring a reliable solder joint.

Technical Specifications

Power Field Effect Transistors (FET) PMV90EN,215 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMV90EN,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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