Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
Add filters
All
Selected
NP80N04NLG-S18-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; JEDEC-95 Code: TO-262AA; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
80 A
.0048 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
NOT SPECIFIED
N-CHANNEL
115 W
300 A
Not Qualified
FET General Purpose Power
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NP80N04PLG-E1B-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Peak Reflow Temperature (C): NOT SPECIFIED; Additional Features: LOGIC LEVEL COMPATIBLE;
.0045 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
NP80N04PUG-E1B-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 80 A;
NP80N055MDG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 55 V;
55 V
.0069 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
200 A
NP80N06PLG-E1B-AY
NP80N06PLG-E1B-AY by Renesas Electronics is a N-channel FET with 60V DS breakdown voltage and 180A IDM. Ideal for switching applications, it features 0.0083 ohm max RDS(on) and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation up to 175°C.
60 V
.0083 ohm
180 A
NP82N04MDG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Additional Features: LOGIC LEVEL COMPATIBLE;
82 A
.0085 ohm
143 W
328 A
NP82N055MUG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 82 A;
.006 ohm
NP82N055NUG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
NP90N04VUG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; JEDEC-95 Code: TO-252; Transistor Element Material: SILICON;
90 A
.004 ohm
TO-252
105 W
NP90N06VLG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
.0078 ohm
NDD02N60Z-1G
Onsemi
NDD02N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 9A IDM, and 4.8 ohm RDS(on). It's an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and low on-resistance.
120 mJ
600 V
2.2 A
4.8 ohm
e3
150 Cel
260
57 W
9 A
FET General Purpose Powers
TIN
30
NDF06N60ZH
NDF06N60ZH by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for applications requiring high power dissipation in enhancement mode operation. Suitable for use in circuits where low drain-source resistance and high current handling are essential.
113 mJ
ISOLATED
7.1 A
1.2 ohm
35 W
28 A
NTP5863NG
NTP5863NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 383A IDM, and 0.0078 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
157 mJ
97 A
383 A
CSD16323Q3C
Texas Instruments
CSD16323Q3C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 112A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0072 ohm Drain-Source On Resistance.
AVALANCHE RATED
125 mJ
25 V
60 A
21 A
.0072 ohm
R-PDSO-N8
8
-55 Cel
3 W
112 A
MATTE TIN
NO LEAD
DUAL
CSD17506Q5A
CSD17506Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 150A IDM, and 0.0053 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
259 mJ
30 V
100 A
23 A
.0053 ohm
65 pF
3.2 W
150 A
NTP5864NG
NTP5864NG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 252A IDM, and 0.0124 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-power applications. Ideal for circuits requiring high current handling and low on-resistance.
80 mJ
63 A
.0124 ohm
107 W
252 A
Tin (Sn)
NP180N055TUJ-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
.0023 ohm
R-PSSO-G6
6
348 W
720 A
NP90N03VHG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 360 A;
.0032 ohm
360 A
NP90N03VLG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 90 A; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIA444DJT-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIA444DJT-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 12A max Drain Current and 0.017 ohm max On Resistance. This MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
12 A
.017 ohm
S-PDSO-N3
SQUARE
19 W
40 A
SIS478DN-T1-GE3
Vishay Intertechnology's SIS478DN-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage. Ideal for switching applications, it features 40A IDM and 0.02 ohm RDS(on). With a max power dissipation of 15.6W and operating temperature up to 150°C, this MOSFET is suitable for various high-power electronic designs.
5 mJ
.02 ohm
S-PDSO-C5
5
15.6 W
Matte Tin (Sn)
C BEND
40
SQM120N03-1M5L_GE3
Vishay Intertechnology's SQM120N03-1M5L_GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A ID. Ideal for applications requiring high pulsed drain current up to 480A, such as power management systems. Features include built-in diode, 0.0015 ohm RDS(on), and EAS of 336mJ for robust performance in enhancement mode operation.
336 mJ
120 A
.0015 ohm
480 A
VS-FB190SA10
VS-FB190SA10 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 720A IDM, 700mJ EAS, and 0.0065 ohm Drain-Source On Resistance. With a max power dissipation of 568W and operating temperature of 150°C, it offers high performance in various industrial settings.
700 mJ
100 V
190 A
.0065 ohm
R-PUFM-X4
4
568 W
UNSPECIFIED
UPPER
FQD3P50TM_F085
Fairchild Semiconductor
FQD3P50TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 8.4A and EAS of 250mJ, operating in ENHANCEMENT MODE at up to 150°C.
250 mJ
500 V
2.1 A
4.9 ohm
P-CHANNEL
50 W
8.4 A
Other Transistors
NP180N04TUJ-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G6;
TO-263
NP40N10PDF-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Transistor Element Material: SILICON; Additional Features: LOGIC LEVEL COMPATIBLE;
61 mJ
.038 ohm
1.8 W
NP40N10VDF-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE;
.037 ohm
1.2 W
NP40N10VDF-E2-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .037 ohm;
NP40N10YDF-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 80 A;
.036 ohm
R-PDSO-F8
1 W
Pure Tin (Sn)
FLAT
NTD2955PT4G
NTD2955PT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max IDM and 0.18 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. With a compact GULL WING package style and 175°C Max Operating Temp, it offers high power dissipation of 55W in various electronic designs.
216 mJ
.18 ohm
55 W
36 A
NTD4959NH-35G
NTD4959NH-35G by Onsemi is a N-channel Power FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for switching applications, it features 0.0125 ohm RDS(on) and 112.5mJ EAS rating. Package: PLASTIC/EPOXY, Configuration: SINGLE WITH DIODE, Technology: MOSFET.
112.5 mJ
.0125 ohm
130 A
NTD4959NHT4G
NTD4959NHT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 130A IDM, and 0.0125 ohm Drain-Source Resistance. With a built-in diode and GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE for efficient power management in various electronic devices.
IPA50R380CE
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
210 mJ
.38 ohm
30 A
IPD60R1K4C6
IPD60R1K4C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, suitable for switching applications. It features a single configuration with built-in diode, 8A max pulsed drain current, and 1.4 ohm max RDS(on). This MOSFET operates in enhancement mode at up to 150°C, making it ideal for high-power applications.
26 mJ
3.2 A
1.4 ohm
28.4 W
8 A
IPD60R3K3C6
IPD60R3K3C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 4A and an operating temperature of up to 150°C. With a built-in diode, this MOSFET has a low on-resistance of 3.3 ohm and can handle up to 18.1W power dissipation in a small outline package.
6 mJ
1.7 A
3.3 ohm
18.1 W
4 A
NTBV5605T4G
The Onsemi NTBV5605T4G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 55A IDM and 0.14 ohm RDS(ON), suitable for high-power operations. With a max power dissipation of 88W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
338 mJ
18.5 A
.14 ohm
88 W
55 A
NTDV18N06LT4G
NTDV18N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and built-in DIODE in a PLASTIC/EPOXY package. AEC-Q101 compliant, it operates b/w -55 to 175 °C with fast turn-on/off times of 180/120 ns.
72 mJ
18 A
.065 ohm
80 pF
54 A
AEC-Q101
120 ns
180 ns
NTDV20P06LT4G
NTDV20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it offers efficient performance in various electronic designs.
304 mJ
15.5 A
.15 ohm
120 pF
65 W
50 A
185 ns
200 ns
NTMFS4933NT1G
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 210 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
210 A
STD3PK50Z
STMicroelectronics
STD3PK50Z by STMicroelectronics is a P-CHANNEL FET for switching applications. It features a 500V DS breakdown voltage, 11.2A max pulsed drain current, and 4 ohm max drain-source resistance. With a small outline package style and operating temperature range of -55 to 150°C, it's ideal for power management in various electronic devices.
2.8 A
4 ohm
70 W
11.2 A
Matte Tin (Sn) - annealed
STD65N3LLH5
STD65N3LLH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 65A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 50W. This transistor features a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
ULTRA-LOW RESISTANCE
65 A
.0097 ohm
260 A
STFI20NK50Z
STFI20NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 850mJ EAS, and 0.27 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with SILICON element material and ISOLATED case connection.
850 mJ
17 A
.27 ohm
68 A
STU65N3LLH5
STU65N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 260A IDM, and 0.0097 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
TO-251
STB11N52K3
STB11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a built-in DIODE, operates in SINGLE configuration, and has GULL WING terminals.
170 mJ
525 V
10 A
.51 ohm
STB16N65M5
STB16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 48A IDM, and 0.279 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE with 200mJ EAS.
200 mJ
650 V
.279 ohm
245
90 W
48 A
STB23NM50N
STB23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 68A IDM, and 0.19 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals.
254 mJ
.19 ohm
125 W
STB5N62K3
STB5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W power dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
ULTRA LOW-ON RESISTANCE
620 V
4.2 A
1.6 ohm
16.8 A
STD3LN62K3
STD3LN62K3 by STMicroelectronics is an N-CHANNEL Power FET with 620V DS Breakdown Voltage. It features a built-in diode for switching applications, offering 10A IDM and 90mJ EAS. This MOSFET has a max ID of 2.5A, 3Ω RDS(on), and comes in a small outline package suitable for surface mount configurations.
90 mJ
2.5 A
3 ohm
© 2023 All rights reserved
