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NP180N055TUJ-E1-AY

Renesas Electronics

NP180N055TUJ-E1-AY by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,820 parts In-Stock

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5,820

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Distributors (Availability)

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AZTECH Wire

Italy . 1,212 parts In-Stock

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$17.470

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1,212

$17.470

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Component Stockers USA

USA . 304 parts In-Stock

1+ parts

$99.990

100+ parts

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1k+ parts

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10k+ parts

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304

$99.990

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Perfect Parts

USA . 896 parts In-Stock

1+ parts

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896

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Technical Specifications

Power Field Effect Transistors (FET) NP180N055TUJ-E1-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

180 A

Maximum Drain Current (ID):

180 A

Maximum Drain-Source On Resistance:

.0023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

720 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP180N055TUJ-E1-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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