Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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NVD6415ANT4G
Onsemi
NVD6415ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
79 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
23 A
.055 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
83 W
89 A
AEC-Q101
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SILICON
NVD6416ANT4G
NVD6416ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for automotive applications due to AEC-Q101 compliance.
43 mJ
17 A
.081 ohm
71 W
62 A
STB27NM60ND
STMicroelectronics
STB27NM60ND by STMicroelectronics is a N-CHANNEL FET with 21A max drain current and 160W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temp up to 150°C makes it suitable for industrial environments.
21 A
150 Cel
245
160 W
STB34NM60N
STB34NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 126A IDM, 345mJ EAS, and 0.105ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 210W and can handle up to 31.5A ID.
345 mJ
600 V
29 A
31.5 A
.105 ohm
TO-263AB
NOT SPECIFIED
210 W
126 A
FET General Purpose Powers
SWITCHING
STB95N4F3
STB95N4F3 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 110W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
80 A
110 W
STI13NM60N
STI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 90W power dissipation.
200 mJ
11 A
.36 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
90 W
44 A
NO
THROUGH-HOLE
STU13NM60N
STU13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 0.36 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection makes it suitable for various power electronics designs.
TO-251
STW12NK60Z
STW12NK60Z by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for various industrial and automotive uses due to its robust single-channel configuration.
10 A
150 W
Matte Tin (Sn)
NTMFS4927NCT3G
Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain Current (Abs) (ID): 38 A; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1;
38 A
TIN
NVMFS5830NLT1G
NVMFS5830NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
361 mJ
40 V
185 A
.0036 ohm
R-PDSO-F5
5
158 W
1012 A
FLAT
DUAL
NVMFS5830NLT3G
NVMFS5830NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Features include 361mJ Avalanche Energy Rating and 175 °C Max Operating Temp.
NVMFS5885NLT3G
NVMFS5885NLT3G by Onsemi is a single N-channel Power FET with 39A max drain current and 54W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology. Suitable for surface mount designs, it has matte tin terminal finish and can withstand peak reflow temperature of 260°C for up to 30s.
39 A
54 W
STF130N10F3
STF130N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 184A IDM, and 0.0096 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
ULTRA LOW RESISTANCE
125 mJ
ISOLATED
46 A
.0096 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
35 W
184 A
STFI26NM60N
STFI26NM60N by STMicroelectronics is a N-CHANNEL FET with 20A ID and 35W power dissipation. Ideal for high-power applications, it operates up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
20 A
STH130N10F3-2
STH130N10F3-2 by STMicroelectronics is a N-channel Power FET with 100V DS breakdown voltage, 120A max drain current, and 0.0093 ohm on-resistance. Ideal for switching applications, it features a built-in diode, 450A pulsed drain current, and operates in enhancement mode at up to 175 °C.
120 A
.0093 ohm
250 W
450 A
Matte Tin (Sn) - annealed
STH180N10F3-6
STH180N10F3-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 315W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
180 A
315 W
STL35N6F3
STL35N6F3 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an 80W power dissipation rating and can withstand up to 175 °C temperature.
409 mJ
60 V
35 A
.022 ohm
80 W
100 A
STL66DN3LLH5
STL66DN3LLH5 by STMicroelectronics is an N-CHANNEL Power FET with 78.5A max drain current and 72W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
78.5 A
72 W
STL70N10F3
STL70N10F3 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 64A IDM, 770mJ EAS, and 0.0084 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.
770 mJ
82 A
58 A
.0084 ohm
136 W
64 A
STP130N10F3
STMicroelectronics STP130N10F3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Max Drain Current, 0.0096 ohm RDS(on), and 175 °C Max Operating Temp. Suitable for high-power switching circuits due to its 450A IDM and 125mJ EAS ratings.
DMG4N65CT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9.14 W; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
HIGH RELIABILITY
456 mJ
650 V
4 A
3 ohm
9.14 W
6 A
IPU60R1K4C6
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 8 A; Avalanche Energy Rating (EAS): 26 mJ;
26 mJ
1.4 ohm
TO-251AA
8 A
NP60N04MUK-S18-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
60 A
105 W
NP60N04NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Drain Current (ID): 60 A;
NP60N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NP89N055MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Maximum Drain Current (ID): 90 A; Peak Reflow Temperature (C): NOT SPECIFIED;
90 A
147 W
NP89N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;
NP90N04MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
176 W
NP90N04NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP90N055MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP90N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;
NVTFS5820NLTAG
NVTFS5820NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 29A ID, and 0.0115 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include N-CHANNEL polarity, 247A IDM, and 48mJ EAS rating.
48 mJ
.0115 ohm
S-PDSO-F5
SQUARE
3.2 W
247 A
NVTFS5820NLTWG
NVTFS5820NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 29A Drain Current, and 0.0115 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature. Single configuration with built-in diode in a small outline package.
DMP2070UCB6-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Maximum Pulsed Drain Current (IDM): 12 A; Package Style (Meter): GRID ARRAY;
20 V
3.5 A
2.5 A
.15 ohm
38 pF
R-PBGA-B6
e1
6
-55 Cel
GRID ARRAY
P-CHANNEL
1.47 W
12 A
Other Transistors
TIN SILVER COPPER
BALL
BOTTOM
NVMFS5834NLT1G
NVMFS5834NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
75 A
14 A
.0136 ohm
107 W
276 A
NVMFS5834NLT3G
NVMFS5834NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
SIJ482DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIJ482DP-T1-GE3 is a N-CHANNEL FET with 60A max drain current and 69.4W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various industrial and automotive uses.
69.4 W
NTLLD4901NFTWG
The Onsemi NTLLD4901NFTWG is an N-CHANNEL Power FET with 9.6A max drain current and 3.23W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for high-power circuits in various electronic devices.
9.6 A
3.23 W
DMP2035UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .045 ohm; Package Shape: RECTANGULAR;
5.2 A
.045 ohm
R-PDSO-G6
2 W
24 A
SIHG14N50D-GE3
Vishay Intertechnology's SIHG14N50D-GE3 is a N-channel power FET with 500V DS breakdown voltage and 38A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.4 ohm max RDS(on), and 56mJ EAS rating.
56 mJ
500 V
.4 ohm
TO-247AC
IPA50R280CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 231 mJ; JESD-30 Code: R-PSFM-T3;
231 mJ
.28 ohm
42.9 A
IPA50R500CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
129 mJ
.5 ohm
IPA50R950CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Finish: TIN; Transistor Element Material: SILICON;
68 mJ
.95 ohm
12.8 A
NID9N05ACLT4G
NID9N05ACLT4G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating from -55 to 175 °C, it offers fast ton of 950ns and toff of 3850ns.
LOGIC LEVEL COMPATIBLE
160 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
52 V
9 A
.181 ohm
40 pF
1.74 W
3850 ns
950 ns
NTP5862NG
NTP5862NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS(ON). Ideal for power applications requiring high drain current handling capacity. Suitable for use in circuits where low on-resistance and high power dissipation are crucial.
205 mJ
98 A
50 A
.0057 ohm
115 W
335 A
NVB6410ANT4G
NVB6410ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for high-power applications in automotive electronics due to its AEC-Q101 compliance and 188W Pdiss.
500 mJ
76 A
.013 ohm
188 W
305 A
NVB6411ANT4G
NVB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 285A IDM. Ideal for applications requiring high power dissipation, such as automotive electronics due to AEC-Q101 standard compliance.
470 mJ
77 A
.014 ohm
217 W
285 A
NVB6412ANT4G
NVB6412ANT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
300 mJ
.0182 ohm
167 W
240 A
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