Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
STB27NM60ND by STMicroelectronics is a N-CHANNEL FET with 21A max drain current and 160W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temp up to 150°C makes it suitable for industrial environments.
Median Price
$5.106
Lifecycle Status
Suppliers In-Stock
8
In-Stock Inventory
1k+
Arrow
1+ parts
$4.611
100+ parts
-
1k+ parts
10k+ parts
Chip1Stop
$5.600
Verical
Digiode
$4.316
Nova Conductors
$5.068
Anansix
Cyclops Electronics Ltd
Vyrian
IDEA Electronic Components Group
$0.845
$0.760
MKK Technologies
$1.588
DigiPath Technology Company
Advanced Electronics
$2.309
$2.101
$1.893
Ampacity Inc.
$3.860
Corphita
$4.089
Aranea Global
$4.967
$4.768
AZTECH Wire
$13.205
Lixinc
Authorized Procurement Solutions
RC Electronics
Epart123
GreenTree Electronics
Alle Elektronik GmbH
Parana Technologies
$1.010
Microchip USA
N-CHANNEL transistors offer efficient current conduction, making this product suitable for high-power applications.
SINGLE configuration simplifies circuit design and reduces complexity, making it easy to integrate into a variety of electronics.
Surface mount capability allows for easy installation on PCBs, saving space and enabling compact designs.
High maximum drain current allows for handling large loads, making this FET suitable for power applications.
High power dissipation capability ensures reliable operation under high load conditions, increasing overall reliability.
Metal-oxide semiconductor technology provides reliable performance and durability, ensuring long-term functionality.
High maximum operating temperature allows for use in demanding environments, improving overall versatility.
Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring a strong electrical connection.
Short reflow time reduces stress on components during assembly, helping to maintain product integrity.
High peak reflow temperature allows for reliable soldering and ensures secure connections during assembly.
Power Field Effect Transistors (FET) STB27NM60ND attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
STB27NM60ND Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 17/Oct/2018
PCN Design/Specification - D2PAK Lead Modification 04/Oct/2013
PCN Assembly/Origin - Mult Devices Testing 10/May/2018
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
LM555CM
Texas Instruments
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
2N2222A
Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
Solid State Devices
NE555D
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
MURS160T3G
Onsemi
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MMBT2907ALT1G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
SMBJ18CA
Eic Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
DN3535N8-G
Microchip Technology
DN3535N8-G by Microchip Technology is a N-CHANNEL FET with 0.5A IDM, 1.6W Abs Pd, and 10ohm RDS(on). Ideal for switching applications in small outline packages, operating from -55 to 150°C.
IRFR9024PBF
International Rectifier
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Power Dissipation Ambient: 42 W; No. of Terminals: 2;
BSC014N04LSIATMA1
Infineon Technologies
Infineon BSC014N04LSIATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 780A IDM, and 0.002 ohm RDS(ON). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in various electronic devices due to its small outline package and high power dissipation capability.
SQJ457EP-T1_GE3
Vishay Intertechnology
Vishay Intertechnology's SQJ457EP-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.025 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
ZXMP10A18KTC
ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
FQD7P20TM
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
IRF530PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-220AB;
IRF3415STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
IRF7341TRPBF
Infineon's IRF7341TRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 140mJ EAS, and 0.05 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it suits various high-power electronic designs.
NDT2955_NL
Fairchild Semiconductor's NDT2955_NL is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 174mJ EAS, and 0.3 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and comes in a SMALL OUTLINE package.
FDMS86101
FDMS86101 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and 135mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W in a small outline package.
SUM90P10-19L-E3
Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.
BSC030P03NS3GXT
BSC030P03NS3GXT by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 345mJ EAS, and 0.0046 ohm RDS(ON). With ENHANCEMENT MODE operation and -55 to 150 °C temperature range, it offers high performance in a SMALL OUTLINE package.
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
IRF740APBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; No. of Terminals: 3; Avalanche Energy Rating (EAS): 630 mJ;
IRF640STRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 18 A;
STP55NF06
STMicroelectronics
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
IRF3205ZSTRLPBF
IRF3205ZSTRLPBF by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 440A. This transistor is commonly used for switching applications.
IRFS3306TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Drain Current (Abs) (ID): 160 A; Package Style (Meter): SMALL OUTLINE;
AUIRF3205Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STB24N60M6
STB24N60M6 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 52.5A IDM. It's used for switching applications, operates in enhancement mode, and has a max drain current of 17A.
STB20N95K5
STB20N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 70A IDM, 200mJ EAS, and 0.33ohm RDS(on). Operates in ENHANCEMENT MODE with 150°C max temp, suitable for high-power circuits requiring efficient switching capabilities.
STB270N4F3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
STB28N65M2
STB28N65M2 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 80A IDM, and 0.18 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 170W.
STB20N90K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Case Connection: DRAIN; Terminal Form: GULL WING;
STB270N04
STB270N04 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 640A IDM, 1000mJ EAS, and 0.0025 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 330W power dissipation.
STB24N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Peak Reflow Temperature (C): NOT SPECIFIED; JEDEC-95 Code: TO-220AB;
STB20N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Pulsed Drain Current (IDM): 72 A; No. of Elements: 1;
STB21N90K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Drain Current (Abs) (ID): 18.5 A; Terminal Form: GULL WING;
STB24NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 300 mJ; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;
STB21N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 68 A; Package Style (Meter): SMALL OUTLINE;
STB28NM50N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 84 A;
STB23N80K5
Power Field-Effect Transistors; Peak Reflow Temperature (C): 245; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
STB23NM60ND
STB23NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 78A IDM, and 0.18 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 150W Pdiss and 700mJ EAS.
STB26NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Maximum Pulsed Drain Current (IDM): 84 A; Package Shape: RECTANGULAR;
STB200NF04L-1
STB200NF04L-1 by STMicroelectronics is a N-channel FET with 40V DS breakdown voltage, 120A max drain current, and 0.0043 ohm on-resistance. Ideal for switching applications due to its 480A pulsed drain current capability and built-in diode configuration.
STB24N65M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
STB20NM60T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 192 W; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE;
STB200NF04-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Terminal Finish: Matte Tin (Sn); No. of Terminals: 3;
STB20NE06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 60 V;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved