Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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RCX300N20
ROHM
ROHM's RCX300N20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0427 ohm max drain-source resistance. The transistor operates in enhancement mode with a max power dissipation of 40W, making it suitable for high-power circuits.
396 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
200 V
30 A
70 A
.0427 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e1
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
40 W
140 A
FET General Purpose Powers
NO
TIN SILVER COPPER
THROUGH-HOLE
SINGLE
10
SWITCHING
SILICON
RCX511N25
ROHM's RCX511N25 is a N-CHANNEL FET with 250V DS breakdown voltage and 51A max drain current. Ideal for switching applications, it features a built-in diode, 0.065 ohm max on resistance, and 204A pulsed drain current. Suitable for enhancement mode operation in various electronic devices.
197.9 mJ
250 V
51 A
.065 ohm
204 A
DMG4406LSS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL;
HIGH RELIABILITY
30 V
10.3 A
9.3 A
.011 ohm
R-PDSO-G8
e3
8
SMALL OUTLINE
2 W
90 A
YES
MATTE TIN
GULL WING
DUAL
30
ZDX080N50
ROHM ZDX080N50 is a N-CHANNEL FET with 500V DS breakdown voltage, 8A max drain current, and 0.85 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 24A pulsed drain current. Package style: flange mount, terminal form: through-hole.
500 V
8 A
.85 ohm
24 A
STD80N6F6
STMicroelectronics
STD80N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 120W max power dissipation. Utilizes metal-oxide semiconductor technology, suitable for high-power applications in surface mount configurations. Operating temperature up to 175°C makes it ideal for industrial use.
80 A
175 Cel
NOT SPECIFIED
120 W
STL40N75LF3
STL40N75LF3 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 160A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with DUAL terminals.
DRAIN
75 V
40 A
.022 ohm
R-PDSO-F5
5
62 W
160 A
FLAT
STP9NM40N
STP9NM40N by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22.4A IDM, 140mJ EAS, and 0.79 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 150 °C temperature.
BULK: 2500
140 mJ
400 V
5.6 A
.79 ohm
2.3 pF
60 W
22.4 A
STW36NM60ND
STW36NM60ND by STMicroelectronics is a N-CHANNEL FET with 29A max drain current and 190W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR technology.
29 A
190 W
FET General Purpose Power
Matte Tin (Sn)
STY145N65M5
STY145N65M5 by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 552A Max Pulsed Drain Current, 2420mJ Avalanche Energy Rating, and 0.015 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 625W at 150°C.
2420 mJ
650 V
138 A
.015 ohm
R-PSIP-T3
IN-LINE
625 W
552 A
IPD600N25N3GBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 210 mJ; Transistor Application: SWITCHING; Terminal Form: GULL WING;
210 mJ
25 A
.06 ohm
TO-252AA
R-PSSO-G2
2
100 A
2SK3510-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 83 A;
83 A
125 W
RSS050P03FU6TB
ROHM's RSS050P03FU6TB is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, such as power management systems. Operating up to 150°C, it offers reliability in various industrial settings.
5 A
P-CHANNEL
Other Transistors
DMG9N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 13 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 9 A;
9 A
.0013 ohm
13 W
AEC-Q101
DMN2028UFDH-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 6.8 A;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
6.8 A
.036 ohm
R-PDSO-N8
1.5 W
NO LEAD
NTDV5804NT4G
Onsemi
NTDV5804NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 125A Max Pulsed Drain Current, and 0.0075 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and high current handling capabilities.
195 mJ
40 V
69 A
.0075 ohm
71 W
125 A
NVD4805NT4G
NVD4805NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 175A Max Pulsed Drain Current, and 0.0074 ohm Max RDS(on). Ideal for high-power switching circuits in automotive and industrial electronics due to its AEC-Q101 compliance.
288 mJ
95 A
12.7 A
.0074 ohm
79 W
175 A
TIN
IPW90R500C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE; No. of Elements: 1;
388 mJ
900 V
11 A
.5 ohm
TO-247AD
DMG4N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.35 W; Minimum DS Breakdown Voltage: 650 V; Package Style (Meter): FLANGE MOUNT;
456 mJ
4 A
3 ohm
8.35 W
6 A
STDLED656
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
1.3 ohm
TO-252
30 W
STFW1N105K3
STFW1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 20W max power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power management systems or motor control circuits.
1.4 A
20 W
STH270N4F3-2
STH270N4F3-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID, 300W power dissipation, and operates up to 175°C. Ideal for high-power applications requiring efficient switching capabilities in surface-mount configurations.
180 A
300 W
STP1N105K3
STP1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 60W max power dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 150 °C.
STP28NM60ND
STP28NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 92A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications due to its 190W power dissipation and ENHANCEMENT MODE operation.
50 mJ
600 V
23 A
.15 ohm
92 A
STULED656
STULED656 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 24A max pulsed drain current and 1.3ohm max drain-source resistance, operating in ENHANCEMENT MODE up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection offers reliable performance in various power applications.
TO-251
STW28NM60ND
STW28NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 92A IDM, 50mJ EAS, and 0.15ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a RECTANGULAR package style with FLANGE MOUNT and DRAIN case connection.
TO-247
NDD60N360U1-1G
NDD60N360U1-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 44A IDM, and 64mJ EAS. Ideal for applications requiring high power dissipation in single-channel configurations with built-in diode, such as industrial motor drives or power supplies.
64 mJ
.36 ohm
114 W
44 A
NDD60N360U1T4G
NDD60N360U1T4G by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS. Ideal for power applications, it operates in Enhancement Mode with 114W Power Dissipation and 150 °C Max Temp.
NTMFD4C20NT1G
NTMFD4C20NT1G by Onsemi is an N-CHANNEL Power FET with 27.4A max drain current and 4.6W max power dissipation. Ideal for applications requiring high power handling in a compact form factor, such as power supplies and motor control systems. Operating temperature up to 150°C ensures reliable performance in demanding environments.
27.4 A
4.6 W
Matte Tin (Sn) - annealed
NDT02N40T1G
Onsemi's NDT02N40T1G is a Power FET with 400V DS Breakdown Voltage, 1.6A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for power management applications requiring high efficiency and low power dissipation.
120 mJ
.4 A
.0055 ohm
TO-261AA
R-PDSO-G4
4
1.6 A
NTBV75N06T4G
NTBV75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
844 mJ
60 V
75 A
.0095 ohm
214 W
225 A
NVD3055-094T4G
NVD3055-094T4G by Onsemi is an N-channel Power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.094 ohm max drain-source resistance, and operates in enhancement mode.
61 mJ
12 A
.094 ohm
48 W
45 A
NVMFD5852NLWFT1G
NVMFD5852NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, 329A IDM, and 0.012 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.
80 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
15 A
.012 ohm
R-PDSO-F6
6
27 W
329 A
NVMFD5853NLWFT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;
40 mJ
34 A
24 W
165 A
NVMFD5873NLWFT1G
NVMFD5873NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 190A IDM, and 0.013 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
58 A
10 A
.013 ohm
107 W
190 A
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
17 A
23 W
74 A
NVMFD5877NLWFT3G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;
DMC4028SSDQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Shape: RECTANGULAR; No. of Elements: 2;
7.2 A
5.4 A
.028 ohm
N-CHANNEL AND P-CHANNEL
2.16 W
27.3 A
BUZ31H3046
Infineon BUZ31H3046 is a N-CHANNEL FET with 200V DS breakdown voltage and 58A IDM. Ideal for power applications, it features a built-in diode, 0.2 ohm RDS(on), and 200mJ EAS rating. Suitable for enhancement mode operation in various electronic systems.
AVALANCHE RATED
200 mJ
14.5 A
.2 ohm
TO-262AA
IPA50R190CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
339 mJ
.19 ohm
63 A
IPA50R650CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 102 mJ; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-220AB;
102 mJ
6.1 A
.65 ohm
19 A
IPA50R800CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: TIN; Terminal Position: SINGLE;
83 mJ
.8 ohm
15.5 A
STH360N4F6-2
STH360N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates at up to 175 °C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.
STI400N4F6
STI400N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C.
120 A
STP400N4F6
STMicroelectronics' STP400N4F6 is a N-CHANNEL FET with 120A max drain current and 300W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C, utilizing metal-oxide semiconductor technology for efficient performance.
STP80N6F6
STMicroelectronics' STP80N6F6 is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for demanding environments requiring efficient power management.
110 A
150 W
STP80N70F6
STMicroelectronics' STP80N70F6 is a N-CHANNEL Power FET with 96A ID and 110W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single-channel configurations.
96 A
110 W
STW23N85K5
STW23N85K5 by STMicroelectronics is a N-CHANNEL FET with 19A max drain current and 250W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor technology and matte tin terminal finish.
250 W
R6030ENX
ROHM R6030ENX is a N-CHANNEL FET with 600V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 0.13 ohm on-resistance, and 80A pulsed drain current. Suitable for enhancement mode operation in isolated case connections.
636 mJ
.13 ohm
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