Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPW90R800C3FKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 15 A;
157 mJ
SINGLE WITH BUILT-IN DIODE
900 V
6.9 A
.8 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247AD
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
15 A
Not Qualified
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
SPW11N60C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 11 A; Maximum Pulsed Drain Current (IDM): 33 A;
AVALANCHE RATED
340 mJ
600 V
11 A
.38 ohm
33 A
SPW11N60S5FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-247; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3;
ISOLATED
TO-247
22 A
SPW12N50C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 34.8 A; Additional Features: AVALANCHE RATED, HIGH VOLTAGE;
AVALANCHE RATED, HIGH VOLTAGE
500 V
11.6 A
34.8 A
SPW15N60C3FKSA1
SPW15N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for power applications. Features include 45A IDM, 460mJ EAS, and 0.28 ohm RDS(on). Package style is FLANGE MOUNT with SILICON transistor element material.
460 mJ
.28 ohm
45 A
SPW16N50C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
16 A
48 A
SPW20N60S5FKSA1
SPW20N60S5FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 40A and 0.19 ohm Drain-Source On Resistance, operating in ENHANCEMENT MODE at up to 150°C. Perfect for high-power switching needs due to its robust design and high current handling capabilities.
690 mJ
20 A
.19 ohm
40 A
SPW21N50C3FKSA1
SPW21N50C3FKSA1 by Infineon is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max ID of 21A and 0.19ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, it has an IDM of 63A and EAS of 690mJ, making it suitable for high-power tasks.
21 A
TO-247AC
63 A
SPW32N50C3FKSA1
Infineon's SPW32N50C3FKSA1 is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 96A IDM, and 0.11 ohm RDS. Ideal for high-power applications in industries like automotive and industrial due to its 1100mJ EAS rating and 150°C max operating temp.
1100 mJ
32 A
.11 ohm
TO-247AA
96 A
SPW35N60C3FKSA1
SPW35N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 103.8A IDM, 1500mJ EAS, and 0.1 ohm RDS(ON). Operating at up to 150°C, it has a SILICON element and TIN finish in a RECTANGULAR package.
1500 mJ
34.6 A
.1 ohm
103.8 A
SPW47N65C3FKSA1
SPW47N65C3FKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 47A ID. It features a built-in diode, operates in enhancement mode, and has a 0.07 ohm RDS(on). Ideal for high-power applications requiring efficient switching and low on-resistance.
1800 mJ
650 V
47 A
.07 ohm
141 A
BSO207PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Maximum Drain-Source On Resistance: .045 ohm; Terminal Position: DUAL;
44 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5 A
.045 ohm
R-PDSO-G8
2
8
SMALL OUTLINE
P-CHANNEL
22.8 A
YES
GULL WING
DUAL
BSO330N02KGFUMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 26 A; Terminal Form: GULL WING;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
19 mJ
4.2 A
.03 ohm
NOT SPECIFIED
26 A
SPW52N50C3FKSA1
SPW52N50C3FKSA1 by Infineon is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 156A IDM. Ideal for applications requiring high power handling, such as industrial motor drives or power supplies. Features include 0.07 ohm Drain-Source On Resistance and 1800mJ Avalanche Energy Rating.
52 A
156 A
BUZ30AHXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 21 A; JESD-609 Code: e3;
450 mJ
200 V
.13 ohm
TO-220AB
84 A
BUZ30AH3045AATMA1
Infineon's BUZ30AH3045AATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, 84A IDM, and 0.13 ohm RDS. Ideal for power applications in small outline packages, it operates in enhancement mode with 150°C max temp.
DRAIN
TO-263AB
R-PSSO-G2
BSZ076N06NS3GATMA1
Infineon BSZ076N06NS3GATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 80A max pulsed drain current, 0.0076 ohm max RDS(on), and 118mJ avalanche energy rating. Suitable for enhancement mode operation in high temperature environments up to 150°C.
118 mJ
60 V
14 A
.0076 ohm
S-PDSO-N8
SQUARE
80 A
NO LEAD
SPD04N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 130 mJ; JEDEC-95 Code: TO-252; Maximum Drain-Source On Resistance: .95 ohm;
130 mJ
4.5 A
.95 ohm
TO-252
13.5 A
BSZ120P03NS3EGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ESD PROTECTED; Terminal Finish: TIN; Terminal Position: DUAL;
ESD PROTECTED
73 mJ
30 V
.02 ohm
160 A
BTS240AHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Terminal Position: SINGLE; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
50 V
58 A
.018 ohm
TO-218
232 A
IPA65R190CFDXKSA1
Infineon's IPA65R190CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34W in a RECTANGULAR package with THROUGH-HOLE terminals.
484 mJ
17.5 A
-55 Cel
34 W
57.2 A
Tin (Sn)
IPB65R190CFDATMA1
Infineon's IPB65R190CFDATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(on). Operating from -55 to 150 °C, it has GULL WING terminals in a RECTANGULAR package.
IPI65R190CFDXKSA1
IPI65R190CFDXKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 650V. It is used for switching applications and has a max pulsed drain current of 57.2A.
TO-262AA
R-PSIP-T3
IN-LINE
151 W
IPP65R190CFDXKSA1
IPP65R190CFDXKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage and 57.2A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 151W. The transistor features a 0.19 ohm on-resistance and can handle up to 17.5A drain current efficiently.
IPW65R190CFDFKSA1
Infineon's IPW65R190CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 151W in a FLANGE MOUNT package.
IPA65R190C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Minimum DS Breakdown Voltage: 650 V; Terminal Position: SINGLE;
485 mJ
66 A
IPB65R190C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 650 V; Terminal Form: GULL WING; Case Connection: DRAIN;
IPP65R190C6XKSA1
IPP65R190C6XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, 0.19 ohm RDS(on), and 66A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 485mJ.
IPW65R190C6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 66 A; Package Shape: RECTANGULAR; JESD-609 Code: e3;
IPA65R190E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 650 V; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
IPP65R190E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR;
IPW65R190E6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 650 V; Avalanche Energy Rating (EAS): 485 mJ;
BSO200P03SHXUMA1
Infineon's BSO200P03SHXUMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 36.4A IDM. Ideal for power applications, it features a built-in diode, 0.02 ohm RDS(on), and 98mJ EAS rating. Suitable for enhancement mode operation in various electronic devices due to its small outline package and GULL WING terminals.
LOGIC LEVEL COMPATIBLE
98 mJ
7.4 A
36.4 A
BSO203SPHXUMA1
Infineon BSO203SPHXUMA1 is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35.6A IDM, and 0.021 ohm RDS(on). Ideal for power management applications due to its small outline package style and high drain current capability. Operating in enhancement mode, it offers efficient performance in various electronic devices.
97 mJ
5.7 A
.021 ohm
35.6 A
IPP048N04NGXKSA1
Infineon's IPP048N04NGXKSA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 0.0048 ohm RDS(on), and 70A ID. Ideal for SWITCHING applications, it features a 400A IDM and 35mJ EAS rating. The PLASTIC/EPOXY package with BUILT-IN DIODE suits ENHANCEMENT MODE operations in various industries.
35 mJ
40 V
70 A
.0048 ohm
400 A
SPP08P06PHXKSA1
SPP08P06PHXKSA1 by Infineon Technologies is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 35.2A IDM. Ideal for applications requiring high drain current handling, such as power supplies and motor control systems. Features include a built-in diode, 0.3 ohm RDS(on), and 70mJ EAS rating.
70 mJ
8.8 A
.3 ohm
35.2 A
SPA07N60CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Terminal Finish: TIN; JESD-609 Code: e3;
230 mJ
6.6 A
.7 ohm
17 A
SPA15N60CFDXKSA1
SPA15N60CFDXKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 33A IDM, and 0.33 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temperature of 150°C. The transistor features a built-in diode and offers an EAS rating of 460mJ.
13.4 A
.33 ohm
SPI15N60CFDHKSA1
Infineon's SPI15N60CFDHKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 33A IDM and 0.33 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with BUILT-IN DIODE suits various power electronics designs.
SPI20N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
20.7 A
.22 ohm
BSO080P03NS3EGXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 149 mJ; Moisture Sensitivity Level (MSL): 3;
149 mJ
9.8 A
.008 ohm
IPA030N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1000 mJ
100 V
79 A
.003 ohm
175 Cel
316 A
IPA032N06N3GXKSA1
Infineon's IPA032N06N3GXKSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 336A IDM, 235mJ EAS, and 0.0032 ohm RDS(ON). With a max operating temp of 175°C, this MOSFET is designed for high-power ENHANCEMENT MODE operation.
235 mJ
.0032 ohm
336 A
IPA037N08N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 300 A;
680 mJ
80 V
75 A
.0037 ohm
300 A
IPA057N06N3GXKSA1
Infineon's IPA057N06N3GXKSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 240A IDM, 77mJ EAS, and 0.0057 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and SILICON element material.
77 mJ
60 A
.0057 ohm
240 A
IPA057N08N3GXKSA1
Infineon's IPA057N08N3GXKSA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 240A IDM, 290mJ EAS, and 0.0057 ohm RDS(on). Operating at up to 175°C, it has a SILICON element and TIN finish in a FLANGE MOUNT package.
290 mJ
IPA093N06N3GXKSA1
Infineon's IPA093N06N3GXKSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0093 ohm RDS(on), and 172A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 175°C.
43 mJ
43 A
.0093 ohm
172 A
IPA100N08N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 160 A; Terminal Position: SINGLE; Transistor Element Material: SILICON;
110 mJ
.01 ohm
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