Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPP065N06LGAKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; JEDEC-95 Code: TO-220AB; JESD-30 Code: R-PSFM-T3;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
530 mJ
SINGLE WITH BUILT-IN DIODE
60 V
80 A
.0065 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
320 A
Not Qualified
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPP120N06NGAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 300 A; Avalanche Energy Rating (EAS): 280 mJ; Package Style (Meter): FLANGE MOUNT;
AVALANCHE RATED
280 mJ
75 A
.012 ohm
300 A
IPD042P03L3GBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
LOGIC LEVEL COMPATIBLE
269 mJ
DRAIN
30 V
70 A
.0068 ohm
TO-252
R-PSSO-G2
2
SMALL OUTLINE
P-CHANNEL
280 A
YES
TIN
GULL WING
IPD127N06LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 240 mJ; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
240 mJ
50 A
.0127 ohm
TO-252AA
200 A
IPD800N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 43 mJ; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
43 mJ
16 A
.08 ohm
64 A
IPA60R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
HIGH VOLTAGE
210 mJ
ISOLATED
600 V
10.6 A
.38 ohm
150 Cel
30 A
IPB60R380C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 600 V;
TO-263AB
IPI60R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 600 V; No. of Terminals: 3;
TO-262AA
R-PSIP-T3
IN-LINE
IPP60R380C6XKSA1
IPP60R380C6XKSA1 by Infineon Technologies is a N-CHANNEL power FET with 600V DS breakdown voltage. It is used for switching applications, with a max pulsed drain current of 30A and an avalanche energy rating of 210mJ.
IPB042N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2; JESD-609 Code: e3;
60 mJ
.006 ohm
400 A
IPP042N03LGXKSA1
IPP042N03LGXKSA1 by Infineon Technologies is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.006 ohm RDS(on), and 70A ID. Ideal for SWITCHING applications due to its 400A IDM, 60mJ EAS rating, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
IPI045N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
340 mJ
100 V
100 A
.0045 ohm
IPB055N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1; Avalanche Energy Rating (EAS): 60 mJ;
.0078 ohm
350 A
IPP055N03LGXKSA1
IPP055N03LGXKSA1 by Infineon is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.0078 ohm Drain-Source On Resistance, and 50A Max Drain Current. Ideal for SWITCHING applications due to its 350A Pulsed Drain Current, ENHANCEMENT MODE operation, and built-in DIODE. Suitable for various industries requiring high-power performance in a FLANGE MOUNT package.
IPI072N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Package Shape: RECTANGULAR; JESD-609 Code: e3;
160 mJ
.0072 ohm
IPD082N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
110 mJ
.0082 ohm
IPI086N10N3GXKSA1
IPI086N10N3GXKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.0086 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it features a max IDM of 320A and EAS of 110mJ. Operating in ENHANCEMENT MODE, it has a max ID of 80A and can withstand up to 175°C temperature.
.0086 ohm
IPP086N10N3GXKSA1
IPP086N10N3GXKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0086 ohm RDS(on), and 80A ID. It's used for SWITCHING applications due to its 320A IDM, 110mJ EAS, and ENHANCEMENT MODE operation at up to 175°C.
IPB096N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .0141 ohm;
40 mJ
35 A
.0141 ohm
245 A
IPP126N10N3GXKSA1
IPP126N10N3GXKSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 0.0126 ohm RDS(on), and 58A ID. Ideal for switching applications due to its 232A IDM, 70mJ EAS rating, and SILICON element material. Operates in enhancement mode at up to 175°C temperature with a single terminal position.
70 mJ
58 A
.0126 ohm
232 A
IPP139N08N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 180 A; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
50 mJ
80 V
45 A
.0139 ohm
180 A
IPI180N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-262AA; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
43 A
.018 ohm
172 A
IPA60R099C6XKSA1
Infineon's IPA60R099C6XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 112A IDM, 796mJ EAS, and 0.099ohm RDS(ON). With a max operating temperature of 150°C, it offers reliable performance in various industrial settings.
796 mJ
37.9 A
.099 ohm
112 A
IPB60R099C6ATMA1
Infineon's IPB60R099C6ATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 112A IDM, 796mJ EAS, and 0.099 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a small outline package.
IPW60R099C6FKSA1
Infineon's IPW60R099C6FKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 112A IDM and 0.099 ohm RDS(on), it operates in ENHANCEMENT MODE up to 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals, suitable for high-power circuits.
TO-247
IPA60R160C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .16 ohm; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
497 mJ
23.8 A
.16 ohm
IPP60R160C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPW60R160C6FKSA1
Infineon's IPW60R160C6FKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 70A and 0.16 ohm RDS(on), it operates in enhancement mode at up to 150°C. The transistor's built-in diode and high EAS of 497mJ make it suitable for various power control systems.
IPA60R280C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 284 mJ; Maximum Pulsed Drain Current (IDM): 40 A; Maximum Drain-Source On Resistance: .28 ohm;
284 mJ
13.8 A
.28 ohm
40 A
IPB60R280C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 284 mJ; Transistor Application: SWITCHING;
IPI60R280C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 600 V;
IPP60R280C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
IPW60R280C6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Terminal Finish: TIN; JESD-609 Code: e3;
IPA60R600C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
133 mJ
7.3 A
.6 ohm
19 A
IPB60R600C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .6 ohm; Avalanche Energy Rating (EAS): 133 mJ; JESD-30 Code: R-PSSO-G2;
IPD60R600C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Drain Current (ID): 7.3 A;
IPP60R600C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
IPP034NE7N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Maximum Drain Current (ID): 100 A; Terminal Position: SINGLE;
640 mJ
75 V
.0034 ohm
IPP100N08N3GXKSA1
IPP100N08N3GXKSA1 by Infineon is a N-CHANNEL FET with 80V DS Breakdown Voltage, 280A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include 90mJ EAS rating, operating up to 175°C, and a built-in DIODE in a RECTANGULAR package.
90 mJ
.01 ohm
IPI147N12N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain-Source On Resistance: .0147 ohm; JESD-30 Code: R-PSIP-T3;
120 V
56 A
.0147 ohm
224 A
IPW60R041C6FKSA1
IPW60R041C6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.041 ohm RDS(on), and 272A IDM. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
1954 mJ
.041 ohm
272 A
IPW60R070C6FKSA1
Infineon's IPW60R070C6FKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, 0.07 ohm RDS(on), and 159A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 175°C.
1135 mJ
53 A
.07 ohm
TO-247AA
159 A
SPP07N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 6.6 A; Minimum DS Breakdown Voltage: 600 V;
230 mJ
6.6 A
.7 ohm
17 A
SPP11N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 600 V; Transistor Application: SWITCHING;
11 A
.44 ohm
28 A
SPP15N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .33 ohm; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 33 A;
460 mJ
13.4 A
.33 ohm
33 A
SPP20N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .22 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
690 mJ
20.7 A
.22 ohm
52 A
SPP24N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 55 A;
780 mJ
21.7 A
.185 ohm
55 A
SPW07N60CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 17 A; Maximum Drain Current (ID): 6.6 A;
TO-247AD
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