Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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BUK7614-55A,118
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Avalanche Energy Rating (EAS): 125 mJ; Case Connection: DRAIN;
125 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
55 V
73 A
.014 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
245
N-CHANNEL
166 W
266 A
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
BUK7615-100A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 240 A; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
120 mJ
100 V
75 A
.015 ohm
240 A
BUK7616-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; No. of Terminals: 2;
65.7 A
.016 ohm
263 A
BUK7624-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V; Case Connection: DRAIN;
80 mJ
45 A
.024 ohm
180 pF
103 W
180 A
60 ns
53 ns
BUK78150-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Drain Current (Abs) (ID): 5.5 A; Maximum Drain Current (ID): 5.5 A;
25 mJ
5.5 A
.15 ohm
R-PDSO-G4
4
150 Cel
260
8 W
22 A
DUAL
BUK78150-55A,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; JESD-609 Code: e3; Case Connection: DRAIN;
BUK7880-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
LOGIC LEVEL COMPATIBLE
30 mJ
7.5 A
.08 ohm
85 pF
8.3 W
40 A
45 ns
39 ns
BUK9222-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
160 mJ
48 A
TO-252
193 A
MATTE TIN
BUK9506-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 616 A;
1100 mJ
.0067 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
230 W
616 A
NO
THROUGH-HOLE
BUK9506-75B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
852 mJ
75 V
.0066 ohm
300 W
612 A
BUK9508-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
670 mJ
.0085 ohm
200 W
503 A
BUK9508-55B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 203 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
352 mJ
.0093 ohm
203 W
439 A
BUK9509-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 211 W; JEDEC-95 Code: TO-220AB; JESD-609 Code: e3;
400 mJ
108 A
.01 ohm
211 W
433 A
BUK9515-100A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Minimum DS Breakdown Voltage: 100 V; Terminal Finish: TIN;
313 A
BUK9518-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
57 A
.018 ohm
290 pF
125 W
228 A
215 ns
175 ns
BUK9520-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 116 W; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 235 pF;
110 mJ
52 A
.02 ohm
235 pF
116 W
208 A
225 ns
200 ns
BUK9528-100A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Drain-Source On Resistance: .028 ohm; Terminal Position: SINGLE;
45 mJ
49 A
.028 ohm
195 A
BUK9529-100B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 157 W; Terminal Position: SINGLE; Transistor Application: SWITCHING;
152 mJ
46 A
.032 ohm
157 W
186 A
BUK952R8-30B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
2300 mJ
30 V
.003 ohm
950 A
BUK9535-100A,127
NXP Semiconductors' BUK9535-100A,127 is an N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.039 ohm max RDS(on). Operating in enhancement mode, this transistor has a max power dissipation of 149W at 175°C.
41 A
.039 ohm
149 W
165 A
BUK953R2-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Transistor Element Material: SILICON;
1200 mJ
40 V
100 A
.0035 ohm
888 A
BUK954R4-40B,127
NXP Semiconductors' BUK954R4-40B,127 is a N-channel Power FET with 40V DS breakdown voltage and 697A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and 961mJ avalanche energy rating.
961 mJ
.0044 ohm
254 W
697 A
BUK9575-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
72 mJ
20 A
.081 ohm
62 W
81 A
BUK9608-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 187 W; Maximum Turn Off Time (toff): 435 ns; No. of Terminals: 2;
500 mJ
.008 ohm
480 pF
187 W
435 ns
230 ns
BUK9610-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Avalanche Energy Rating (EAS): 333 mJ; Peak Reflow Temperature (C): 245;
333 mJ
.075 A
.011 ohm
400 A
Tin (Sn)
BUK9611-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
330 mJ
.012 ohm
BUK9618-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 127 mJ;
127 mJ
61 A
.019 ohm
136 W
246 A
BUK9620-100A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE;
420 mJ
63 A
.022 ohm
253 A
BUK9635-100A,118
NXP Semiconductors' BUK9635-100A,118 is a N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a built-in diode, 0.039 ohm RDS(on), and 175°C max operating temp.
150 W
BUK9635-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Minimum DS Breakdown Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;
34 A
.035 ohm
85 W
136 A
FET General Purpose Powers
BUK98150-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .15 ohm;
15 mJ
2.6 A
1.8 W
30 A
BUK9832-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 47 A;
100 mJ
12 A
.036 ohm
47 A
BUK9840-55,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Avalanche Energy Rating (EAS): 60 mJ; Operating Mode: ENHANCEMENT MODE;
60 mJ
10.7 A
5 A
.04 ohm
BUK9880-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Additional Features: ESD PROTECTED, LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 3.5 A;
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
3.5 A
BUK9880-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
36 mJ
7 A
.089 ohm
BUK9E3R2-40B,127
BUK9E3R2-40B,127 by NXP Semiconductors is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 888A IDM, and 0.0035 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 300W and can withstand up to 175°C.
TO-262AA
R-PSIP-T3
IN-LINE
BUK9E4R4-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 254 W; Maximum Drain-Source On Resistance: .0044 ohm; Operating Mode: ENHANCEMENT MODE;
IRF530N,127
NXP Semiconductors' IRF530N,127 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 68A IDM and 150mJ EAS. With 0.11 ohm RDS(on) and 175°C max temp, this transistor offers high performance in various power circuits.
150 mJ
15 A
17 A
.11 ohm
63 W
68 A
IRF540,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 92 A; No. of Elements: 1;
230 mJ
28 A
23 A
.077 ohm
92 A
IRF640,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 3; Transistor Element Material: SILICON;
580 mJ
200 V
18 A
16 A
.18 ohm
64 A
IRFZ24N,127
NXP Semiconductors' IRFZ24N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications due to its 0.07 ohm Drain-Source On Resistance and 30mJ EAS rating. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
ESD PROTECTED
.07 ohm
45 W
IRFZ44N,127
NXP Semiconductors' IRFZ44N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 160A IDM and 0.022 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W and can handle up to 175°C temperature.
110 W
160 A
PHB11N06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
10.3 A
PHB78NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
185 mJ
25 V
.0135 ohm
PHD23NQ10T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON; Qualification: Not Qualified;
93 mJ
NOT SPECIFIED
PHD3055E,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSSO-G2;
60 V
TO-252AA
33 W
PHD37N06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain Current (ID): 37 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
37 A
148 A
PHD45N03LTA,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Avalanche Energy Rating (EAS): 40 mJ; Transistor Application: SWITCHING;
40 mJ
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