Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STW28NM50N
STMicroelectronics
STW28NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 84A IDM and 0.158 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 150W and can withstand temperatures up to 150°C.
430 mJ
SINGLE WITH BUILT-IN DIODE
500 V
21 A
.158 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
150 W
84 A
Not Qualified
FET General Purpose Power
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
2SK4151TZ-E
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
150 V
.0025 ohm
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NOT SPECIFIED
4 A
BOTTOM
STFW45N65M5
STFW45N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 140A IDM, and 0.078 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
810 mJ
ISOLATED
650 V
35 A
.078 ohm
140 A
VWM270-0075X2
IXYS Corporation
IXYS Corporation's VWM270-0075X2 is a N-CHANNEL FET with 6 elements in bridge configuration. It has a DS Breakdown Voltage of 75V, Drain Current of 270A, and On Resistance of 0.0021 ohm. Ideal for switching applications due to its high current capacity and low on-resistance.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
75 V
270 A
.0021 ohm
R-XUFM-X17
6
17
175 Cel
UNSPECIFIED
UPPER
BUZ31LH
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 95 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
200 mJ
200 V
13.5 A
.2 ohm
TO-220AB
95 W
54 A
BUZ73AH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED
120 mJ
5.5 A
.6 ohm
40 W
22 A
IPI023NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; No. of Elements: 1;
1100 mJ
120 A
.0023 ohm
TO-262AA
R-PSIP-T3
IN-LINE
300 W
480 A
IPI034NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
640 mJ
100 A
.0034 ohm
214 W
400 A
IPI052NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
370 mJ
80 A
.0052 ohm
320 A
IPD60R600E6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;
133 mJ
DRAIN
600 V
7.3 A
TO-252
R-PSSO-G2
2
SMALL OUTLINE
63 W
19 A
YES
TIN
GULL WING
DMN3052L-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 30 V;
HIGH RELIABILITY
30 V
5.4 A
.032 ohm
R-PDSO-G3
260
1.4 W
MATTE TIN
DUAL
30
DMC3035LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (Abs) (ID): 6.9 A;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
6.9 A
.035 ohm
R-PDSO-G8
8
N-CHANNEL AND P-CHANNEL
2 W
30 A
Other Transistors
STB21NM60ND
STB21NM60ND by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
610 mJ
17 A
.22 ohm
TO-263AB
245
140 W
68 A
Matte Tin (Sn) - annealed
STF21NM60ND
STF21NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 68A IDM, and 0.22 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 30W.
30 W
STI21NM60ND
STI21NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP21NM60ND
STP21NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 68A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW21NM60ND
STW21NM60ND from STMicroelectronics is a powerful N-channel MOSFET designed for switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STB23NM60ND
STB23NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 78A IDM, and 0.18 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 150W Pdiss and 700mJ EAS.
700 mJ
19.5 A
.18 ohm
78 A
STB25NM60ND
STB25NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency circuits in compact designs.
850 mJ
.16 ohm
160 W
STB30NM60ND
STB30NM60ND from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 190W power dissipation. Ideal for high-performance power management in compact designs.
900 mJ
25 A
.385 ohm
190 W
STF23NM60ND
STF23NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 78A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
35 W
STF25NM60ND
STF25NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STF30NM60ND
STF30NM60ND by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 100A max pulsed drain current. It operates in enhancement mode with a max power dissipation of 40W. Ideal for high-efficiency power management solutions.
STI11NM60ND
STI11NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
10 A
.45 ohm
90 W
40 A
STI23NM60ND
STI23NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 19.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STI25NM60ND
STI25NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STK22N6F3
STK22N6F3 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 88A IDM, and 0.006 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 800mJ EAS rating.
ULTRA-LOW RESISTANCE
800 mJ
SOURCE
60 V
.006 ohm
R-XDSO-N4
4
5.2 W
88 A
NO LEAD
STP11NM60ND
STP11NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM, 200mJ EAS, and 0.45 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor has a RECTANGULAR package style with THROUGH-HOLE terminals and METAL-OXIDE SEMICONDUCTOR technology.
25 W
STP23NM60ND
STP23NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 78A IDM, 700mJ EAS, and 0.18 ohm RDS(on). Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals. Operating in ENHANCEMENT MODE up to 150°C.
STP25NM60ND
STP25NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP30NM60ND
STP30NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STU11NM60ND
STU11NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-251
STW23NM60ND
STW23NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 19.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW24NK55Z
STW24NK55Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 550V breakdown voltage, 23A max drain current, and 285W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
400 mJ
550 V
23 A
285 W
92 A
STW25NM60ND
STW25NM60ND from STMicroelectronics is a powerful N-channel MOSFET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
TO-247AC
STW30NM60ND
STW30NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW43NM50N
STW43NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 37A max drain current, and 255W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
37 A
.085 ohm
255 W
148 A
STW55NM60N
STW55NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 51A max drain current, and 350W power dissipation. Ideal for high-efficiency power management in various electronic devices.
51 A
.06 ohm
350 W
204 A
STY80NM60N
STY80NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 74A max drain current, and 447W power dissipation. This robust FET operates efficiently in high-temperature environments up to 150 °C.
74 A
.04 ohm
447 W
BSC205N10LSG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 76 W; Terminal Finish: MATTE TIN; Maximum Drain Current (Abs) (ID): 45 A;
LOGIC LEVEL COMPATIBLE
60 mJ
100 V
45 A
7.4 A
.0205 ohm
R-PDSO-F8
76 W
180 A
FLAT
IPB136N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 80 V;
50 mJ
80 V
.0136 ohm
79 W
IPG15N06S3L-45
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
47 mJ
55 V
15 A
.045 ohm
21 W
60 A
IPG20N06S3L-23
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
110 mJ
20 A
33 A
.023 ohm
45 W
IPG20N06S3L-35
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 2; Qualification: Not Qualified;
55 mJ
IPI070N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 80 V;
150 mJ
.0067 ohm
136 W
IPP070N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 80 V; Avalanche Energy Rating (EAS): 150 mJ;
.007 ohm
STB141NF55-1
STB141NF55-1 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 55 V. It operates in enhancement mode with a low on-resistance of just 0.008 Ω. This robust transistor supports high power dissipation up to 300 W, making it suitable for demanding environments.
1300 mJ
.008 ohm
290 pF
-55 Cel
STB141NF55
STB141NF55 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at temperatures up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance.
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