Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STB21NM60ND by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
Median Price
$7.690
Lifecycle Status
Suppliers In-Stock
8
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1k+
Component Electronics Inc.
1+ parts
100+ parts
$5.770
1k+ parts
$5.000
10k+ parts
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Vyrian
Cyclops Electronics Ltd
ACDS - Activité Composants Distribution Service
Digiode
ComSIT Distribution GmbH
R&J Components
Anansix
IDEA Electronic Components Group
$1.403
$1.263
Continental Prestige Electronics
$2.140
$1.590
MKK Technologies
$2.638
DigiPath Technology Company
AZTECH Wire
$13.580
Kepictronics
Perfect Parts
RC Electronics
Epart123
GreenTree Electronics
Cyclops Electronics Ltd (Excess)
Corphita
Alle Elektronik GmbH
Parana Technologies
$1.678
The plastic/epoxy package offers durability and resistance to environmental factors, making it suitable for varied applications.
N-channel FETs generally provide better efficiency and speed compared to their P-channel counterparts, making them more suitable for power applications.
The built-in diode enhances the protection and functionality of the FET in switching applications, providing additional design flexibility.
Designed for switching applications, this FET is ideal for efficient power management in various electronic devices.
Surface mount technology enables compact designs and simplifies automated assembly, enhancing manufacturability.
A high breakdown voltage ensures reliability in high-voltage applications and reduces the risk of failure.
The rectangular package shape optimizes space in circuit designs, allowing for compact and efficient layouts.
Gull wing terminals facilitate easy soldering and provide a secure connection, essential for reliable operation in various applications.
Enhancement mode operation allows for higher efficiency and better control in switching applications, making it a versatile choice.
A high pulsed drain current rating ensures the FET can handle high power spikes, suitable for demanding applications.
A high avalanche energy rating provides added protection against voltage spikes, extending the longevity of the device.
A maximum drain current capacity of 17 A allows the device to handle significant loads, making it practical for a range of applications.
A two-terminal design simplifies connections, making it user-friendly and efficient for integration into circuits.
High power dissipation capability enables this FET to manage heat effectively, crucial for maintaining performance under heavy loads.
The small outline package style is space-efficient, allowing for high-density circuit designs in compact devices.
MOS technology provides greater scalability and efficiency, enhancing performance in power and signal applications.
A high operating temperature range ensures reliability and performance in harsh environments or high-temperature applications.
Silicon is a well-established material for FETs, offering good thermal conductivity and reliable performance characteristics.
The matte tin finish enhances solderability and reduces oxidation, contributing to better long-term reliability of connections.
The repeat mention of a maximum drain current of 17 A emphasizes its robustness and suitability for applications requiring reliable current handling.
Low on-resistance minimizes power loss, improving overall efficiency and thermal performance during operation.
Single terminal position simplifies design and layout, optimizing space utilization in circuit boards.
This specification ensures compatibility with standard soldering processes, making manufacturing easier and more cost-effective.
A peak reflow temperature of 245 °C indicates robustness during manufacturing processes, reducing the risk of thermal damage.
Power Field Effect Transistors (FET) STB21NM60ND attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Avalanche Energy Rating (EAS):
Configuration:
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Maximum Drain Current (Abs) (ID):
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JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
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STB21NM60ND Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 17/Oct/2018
PCN Design/Specification - D2PAK Lead Modification 04/Oct/2013 IPG-PWR/14/8422 11/Apr/2014
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
ESD5Z5.0T1G
Onsemi
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW080510K0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.
1N4148
Shandong Yiguang Electronic Joint Stock
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T
Samsung
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;
KSZ9031RNXIA
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
RC0603JR-070RL
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
BAV99
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
CRGCQ0805F10K
TE Connectivity
TE Connectivity's CRGCQ0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance.
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
FQD7P20TM
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
DMG6602SVT-7
Diodes Incorporated
DMG6602SVT-7 by Diodes Inc. is a Power FET with N/P-channel, 30V DS breakdown voltage, and 0.06 ohm max RDS(on). Ideal for switching applications, it features 2 elements in separate configuration with built-in diode. With 13A IDM and small outline package style, it operates at up to 150°C.
FQT7N10LTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
IRF540PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 230 mJ; JESD-609 Code: e3;
STD30NF06LT4
STD30NF06LT4 by STMicroelectronics is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 140A and 0.03 ohm RDS(on), operating in ENHANCEMENT MODE at up to 175°C. This power transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount assembly.
SQJ459EP-T1_GE3
The Vishay Intertechnology SQJ459EP-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 200A IDM. Ideal for power applications, it features a built-in diode, 0.018 ohm RDS(on), and 80mJ EAS rating. Suitable for enhancement mode operation in various electronic systems requiring high current handling capabilities.
BSC22DN20NS3GATMA1
Infineon Technologies
Infineon's BSC22DN20NS3GATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 28A IDM and 0.225 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY transistor has DUAL terminals and a built-in DIODE, making it suitable for high-power circuit designs.
IRF5305STRLPBF
IRF5305STRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 110W and operates up to 175°C.
ZXMP6A17GTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
BSC028N06NSTATMA1
BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
FDS8984-F085
FDS8984-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a RECTANGULAR package with GULL WING terminals. With a Max Pulsed Drain Current of 30A and 0.023 ohm Drain-Source On Resistance, it operates in ENHANCEMENT MODE at up to 150°C.
IRF4905PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
IRF3205ZLPBF
IRF3205ZLPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a 0.0065 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. With a max power dissipation of 170W, this transistor is designed for high-performance electronic systems.
IRF530A
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 75 W;
IRF3205LPBF
IRF3205LPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With a max power dissipation of 200W and operating temperature of 175°C, it's suitable for high-power circuits requiring efficient switching capabilities.
G2R1000MT17J
Genesic Semiconductor
G2R1000MT17J by Genesic Semiconductor is a N-CHANNEL FET with 1700V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 8A and EAS of 45mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and SILICON CARBIDE element material, it offers high performance in various power applications.
IRFR9120NTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .48 ohm;
RFD14N05LSM9A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 14 A;
IPZ40N04S5L4R8ATMA1
Infineon's IPZ40N04S5L4R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0067 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FDD4141-F085
FDD4141-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0123 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures from -55 to 150 °C.
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STB24N60M6
STB24N60M6 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 52.5A IDM. It's used for switching applications, operates in enhancement mode, and has a max drain current of 17A.
STB20N95K5
STB20N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 70A IDM, 200mJ EAS, and 0.33ohm RDS(on). Operates in ENHANCEMENT MODE with 150°C max temp, suitable for high-power circuits requiring efficient switching capabilities.
STB270N4F3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
STB28N65M2
STB28N65M2 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 80A IDM, and 0.18 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 170W.
STB20N90K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Case Connection: DRAIN; Terminal Form: GULL WING;
STB270N04
STB270N04 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 640A IDM, 1000mJ EAS, and 0.0025 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 330W power dissipation.
STB24N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Peak Reflow Temperature (C): NOT SPECIFIED; JEDEC-95 Code: TO-220AB;
STB20N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Pulsed Drain Current (IDM): 72 A; No. of Elements: 1;
STB21N90K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Drain Current (Abs) (ID): 18.5 A; Terminal Form: GULL WING;
STB24NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 300 mJ; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;
STB21N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 68 A; Package Style (Meter): SMALL OUTLINE;
STB28NM50N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 84 A;
STB23N80K5
Power Field-Effect Transistors; Peak Reflow Temperature (C): 245; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
STB23NM60ND
STB23NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 78A IDM, and 0.18 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 150W Pdiss and 700mJ EAS.
STB26NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Maximum Pulsed Drain Current (IDM): 84 A; Package Shape: RECTANGULAR;
STB200NF04L-1
STB200NF04L-1 by STMicroelectronics is a N-channel FET with 40V DS breakdown voltage, 120A max drain current, and 0.0043 ohm on-resistance. Ideal for switching applications due to its 480A pulsed drain current capability and built-in diode configuration.
STB24N65M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
STB20NM60T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 192 W; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE;
STB200NF04-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Terminal Finish: Matte Tin (Sn); No. of Terminals: 3;
STB20NE06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 60 V;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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