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VWM270-0075X2

IXYS Corporation

VWM270-0075X2 by IXYS Corporation

IXYS Corporation's VWM270-0075X2 is a N-CHANNEL FET with 6 elements in bridge configuration. It has a DS Breakdown Voltage of 75V, Drain Current of 270A, and On Resistance of 0.0021 ohm. Ideal for switching applications due to its high current capacity and low on-resistance.

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Nova Conductors

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Ampacity Inc.

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AZTECH Wire

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$13.970

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Aranea Global

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Overview

Experience the power of efficiency and reliability with the VWM270-0075X2 by IXYS Corporation. As a leading manufacturer in the field of Power FETs, IXYS brings you a high-quality N-CHANNEL transistor with built-in diodes, perfect for switching applications. With a maximum drain current of 270A and low on-resistance, this product offers unmatched performance and value. Whether you're in the automotive industry, renewable energy sector, or industrial automation, the VWM270-0075X2 provides the optimal solution for your power needs. Trust IXYS to deliver cutting-edge technology that ensures seamless operation and lasting durability.

Feature Benefit Bullets

Polarity/Channel Type: N-CHANNEL

N-channel FETs generally have higher electron mobility, making them efficient for switching applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

The bridge configuration allows for efficient switching and the built-in diode provides protection against voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 75 V

With a minimum breakdown voltage of 75 V, this FET can handle higher voltage levels without failure.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into electronic circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easy to control and offer lower on-state resistance for efficient performance.

Maximum Drain Current: 270 A

Capable of handling high current levels, making it suitable for heavy-duty applications.

No. of Terminals: 17

With 17 terminals, this FET provides multiple connection options for versatile usage.

Package Style: FLANGE MOUNT

Flange mount package style allows for secure mounting and heat dissipation in various environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability in operation.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this FET can withstand high temperature environments.

Transistor Element Material: SILICON

Silicon-based FETs offer good performance and reliability in electronic circuits.

Maximum Drain-Source On Resistance: 0.0021 ohm

Low on-state resistance results in minimal power loss and efficient switching.

Terminal Position: UPPER

Upper terminal position allows for easier access and connection in circuits.

Case Connection: ISOLATED

Isolated case connection provides protection against electrical interference and ensures safe operation.

Technical Specifications

Power Field Effect Transistors (FET) VWM270-0075X2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

75 V

Maximum Drain Current (Abs) (ID):

270 A

Maximum Drain Current (ID):

270 A

Maximum Drain-Source On Resistance:

.0021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XUFM-X17

No. of Elements:

6

No. of Terminals:

17

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VWM270-0075X2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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