Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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DMN6013LFG-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Feedback Capacitance (Crss): 132 pF; Maximum Pulsed Drain Current (IDM): 58.3 A;
56.8 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
10.3 A
.013 ohm
METAL-OXIDE SEMICONDUCTOR
132 pF
S-PDSO-N5
e3
1
5
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
N-CHANNEL
2.1 W
58.3 A
YES
MATTE TIN
NO LEAD
DUAL
SWITCHING
SILICON
NDS7002A_NB9GGTXA
Fairchild Semiconductor
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
SINGLE
.28 A
2 ohm
5 pF
TO-236AB
R-PDSO-G3
3
-65 Cel
RECTANGULAR
.3 W
1.5 A
FET General Purpose Power
GULL WING
IPI100P03P3L-04
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (Abs) (ID): 100 A; Terminal Finish: MATTE TIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
450 mJ
30 V
100 A
.0043 ohm
TO-262AA
R-PSIP-T3
175 Cel
IN-LINE
P-CHANNEL
200 W
400 A
Not Qualified
Other Transistors
NO
THROUGH-HOLE
IPP04CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Terminal Finish: TIN;
1000 mJ
100 V
.0042 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
300 W
TIN
IPP05CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 100 A; JEDEC-95 Code: TO-220AB;
LOGIC LEVEL COMPATIBLE
826 mJ
.0051 ohm
IPP06CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 400 A;
480 mJ
.0062 ohm
214 W
IPP08CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Additional Features: LOGIC LEVEL COMPATIBLE;
254 mJ
98 A
.008 ohm
167 W
392 A
IPP100P03P3L-04
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSFM-T3;
IPW60R250CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): FLANGE MOUNT;
345 mJ
600 V
12 A
.25 ohm
TO-247
104 W
40 A
BSB019N03LXG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 30 V;
AVALANCHE RATED
290 mJ
174 A
31 A
.0019 ohm
R-MBCC-N3
METAL
CHIP CARRIER
89 W
BOTTOM
STD90N4F3
STMicroelectronics
STD90N4F3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
400 mJ
40 V
80 A
.0065 ohm
R-PSSO-G2
2
NOT SPECIFIED
110 W
320 A
STK38N3LLH5
STK38N3LLH5 by STMicroelectronics is a power FET with N-channel configuration and built-in diode. It is used for switching applications, has a min DS breakdown voltage of 30V, and can handle a max drain current of 38A.
SOURCE
38 A
.0026 ohm
R-PDSO-N10
10
5.2 W
152 A
STP90N4F3
STP90N4F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
STU90N4F3
STU90N4F3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
STU95N2LH5
STU95N2LH5 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
165 mJ
25 V
.007 ohm
TO-251
70 W
FQPF5N60CYDTU
FQPF5N60CYDTU by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.5A max drain current and 33W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
4.5 A
33 W
STD70N2LH5
STD70N2LH5 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 48 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
48 A
.01 ohm
60 W
192 A
STL150N3LLH5
STL150N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 150 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 mJ
150 A
35 A
.0024 ohm
R-PDSO-N5
80 W
140 A
Matte Tin (Sn) - annealed
30
RSY160P05TL
ROHM
ROHM RSY160P05TL is a P-CHANNEL FET with 45V DS Breakdown Voltage, 16A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.
45 V
16 A
.05 ohm
R-PDSO-F3
20 W
32 A
FLAT
STF5NK52ZD
STF5NK52ZD from STMicroelectronics is a single N-channel FET designed for efficient power management. It supports a max drain current of 4.4 A and power dissipation up to 25 W, making it ideal for high-temperature applications up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
ISOLATED
4.4 A
25 W
STI12NM50N
STI12NM50N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It supports a max drain current of 11 A and power dissipation up to 100 W, operating at temperatures up to 150 °C. Ideal for various electronic circuits, it features a robust through-hole design.
11 A
100 W
Matte Tin (Sn)
STI90N4F3
STI90N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0062 Ω).
STP85N3LH5
STP85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
ULTRA-LOW RESISTANCE
.0071 ohm
SIR890DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR890DP-T1-GE3 is a N-channel Power FET with 20V DS Breakdown Voltage, ideal for switching applications. Featuring 70A IDM and 0.004 ohm RDS(on), this MOSFET operates in enhancement mode at up to 150°C. Its small outline package with matte tin finish makes it suitable for surface mount designs.
80 mJ
20 V
50 A
30 A
.004 ohm
R-PDSO-C5
50 W
70 A
C BEND
SIA430DJ-T1-GE3
Vishay Intertechnology's SIA430DJ-T1-GE3 is an N-channel Power FET with a built-in diode, ideal for switching applications. It features a max drain current of 12A, pulsed drain current of 40A, and low on-resistance of 0.0135 ohm. Operating in enhancement mode, this MOSFET has a breakdown voltage of 20V and can handle up to 19.2W power dissipation at a max temp of 150°C.
.0135 ohm
S-XDSO-N3
UNSPECIFIED
19.2 W
IRFB4310GPBF
International Rectifier
IRFB4310GPBF by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a max IDM of 550A and 0.007 ohm Drain-Source On Resistance, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can handle up to 130A Drain Current.
980 mJ
130 A
75 A
550 A
MATTE TIN OVER NICKEL
NTB5411NT4G
Onsemi
NTB5411NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 185A IDM, and 0.01 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 166W.
280 mJ
166 W
185 A
NTB5426NT4G
NTB5426NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A ID, 0.006 ohm RDS(on), and 260A IDM. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 215W in a SMALL OUTLINE package.
735 mJ
120 A
.006 ohm
215 W
260 A
FET General Purpose Powers
NTD5803NT4G
NTD5803NT4G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 76A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 240mJ Avalanche Energy Rating, and 0.0072 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
240 mJ
76 A
.0072 ohm
R-PDSO-G2
83 W
228 A
NTD5807NT4G
NTD5807NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS. Ideal for SWITCHING applications, it features a built-in diode in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 33W at 175 °C.
29.4 mJ
23 A
.031 ohm
45 A
STL15N3LLH5
STL15N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 15 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
15 A
60 A
STP70N10F4
STP70N10F4 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 65 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
120 mJ
65 A
.0195 ohm
150 W
STW90NF20
STW90NF20 by STMicroelectronics is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 83 A and power dissipation up to 300 W, making it ideal for power management in industrial systems. Its robust design operates effectively at temperatures up to 150 °C.
83 A
TO-247AD
DMS3014SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.55 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
HIGH RELIABILITY
10.4 A
.014 ohm
R-PDSO-G8
8
1.55 W
63 A
DMS3016SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Maximum Drain Current (Abs) (ID): 9.8 A; JESD-30 Code: R-PDSO-G8;
9.8 A
.016 ohm
1.54 W
90 A
NDD03N50ZT4G
NDD03N50ZT4G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 0.0033 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150 °C temperature.
500 V
2.6 A
.0033 ohm
58 W
10 A
NDD04N50Z-1G
NDD04N50Z-1G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 12A IDM, and 0.0027 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operations at up to 150 °C temperature.
3 A
.0027 ohm
61 W
NDF11N50ZG
NDF11N50ZG by Onsemi is a Power FET with 500V DS Breakdown Voltage, 42A IDM, and 0.52 ohm RDS. Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.
420 mJ
6.7 A
.52 ohm
39 W
42 A
NTD5865N-1G
NTD5865N-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a RECTANGULAR package with TIN finish. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high performance in power management systems.
36 mJ
.018 ohm
137 A
NTD5865NL-1G
NTD5865NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It's an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. With a max power dissipation of 52W and operating temperature range from -55 to 150 °C, it's ideal for high-power circuit designs.
.019 ohm
52 W
NTD5865NLT4G
NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
NTD5865NT4G
NTD5865NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 137A IDM, 36mJ EAS, and 0.018 ohm RDS(on). With a max power dissipation of 71W and operating temperature of 150 °C, it offers high performance in a small outline package.
43 A
71 W
NTTFS5811NLTAG
NTTFS5811NLTAG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 211A Max Pulsed Drain Current. It is used in applications requiring high power dissipation, such as automotive electronics and industrial control systems.
65 mJ
53 A
17 A
S-PDSO-F5
211 A
NTTFS5811NLTWG
NTTFS5811NLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 211A max pulsed drain current. It is used in applications requiring high power dissipation, such as automotive electronics and industrial control systems.
Tin (Sn)
NTTFS5820NLTAG
NTTFS5820NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 149A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package, ideal for power management applications requiring high current handling capabilities.
48 mJ
37 A
.0115 ohm
149 A
NTTFS5820NLTWG
NTTFS5820NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 149A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
STB28NM50N
STB28NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for SWITCHING applications. Features include 84A max pulsed drain current, 0.158 ohm max drain-source resistance, and 150°C max operating temperature. Suitable for high-power switching circuits requiring fast response times.
430 mJ
21 A
.158 ohm
TO-263AB
245
90 W
84 A
STP28NM50N
STP28NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 84A IDM and 430mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.158 ohm RDS(on) and can handle up to 90W power dissipation.
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