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STD70N2LH5

STMicroelectronics

STD70N2LH5 by STMicroelectronics

STD70N2LH5 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 48 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.

Median Price

$0.382

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,499 parts In-Stock

1+ parts

$0.382

100+ parts

$0.382

1k+ parts

$0.382

10k+ parts

$0.382

1,499

$0.382

$0.382

$0.382

$0.382

Chip1Stop

Japan . 1,499 parts In-Stock

1+ parts

$0.744

100+ parts

-

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1,499

$0.744

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Verical

USA . 1,499 parts In-Stock

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-

100+ parts

$0.382

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$0.382

10k+ parts

$0.382

1,499

-

$0.382

$0.382

$0.382

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,518 parts In-Stock

1+ parts

$0.363

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3,518

$0.363

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Vyrian

USA . 3,064 parts In-Stock

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3,064

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Anansix

USA . 1,198 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 3,184 parts In-Stock

1+ parts

$0.344

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-

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3,184

$0.344

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IDEA Electronic Components Group

UK . 1,064 parts In-Stock

1+ parts

$0.573

100+ parts

-

1k+ parts

$0.516

10k+ parts

-

1,064

$0.573

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$0.516

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MKK Technologies

India . 811 parts In-Stock

1+ parts

$1.078

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811

$1.078

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DigiPath Technology Company

USA . 811 parts In-Stock

1+ parts

$1.078

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811

$1.078

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AZTECH Wire

Italy . 691 parts In-Stock

1+ parts

$14.740

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691

$14.740

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,864 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,695 parts In-Stock

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4,695

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Alle Elektronik GmbH

Germany . 3,371 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Perfect Parts

USA . 1,356 parts In-Stock

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Parana Technologies

USA . 213 parts In-Stock

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$0.685

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213

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$0.685

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of efficiency with the STD70N2LH5 from STMicroelectronics, a leader in semiconductor innovation. This high-performance N-channel FET excels in switching applications, delivering exceptional reliability and robust performance even under demanding conditions. Its compact design ensures easy integration into your projects, while its low on-resistance optimizes energy consumption. Elevate your designs with a trusted component that maximizes performance and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer better efficiency and are commonly used in many electronic applications, providing fast switching characteristics.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode feature enhances the design versatility, enabling protection and improved performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control power in circuits, making it ideal for a range of electronic devices.

Surface Mount: YES

Surface mount technology allows for compact design and enhanced circuit density, which is advantageous for modern electronics.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this FET can be reliably used in applications requiring stable performance under varying conditions.

Package Shape: RECTANGULAR

The rectangular package shape contributes to easier mounting and heat dissipation, which is beneficial for maintaining operational efficiency.

Terminal Form: GULL WING

Gull wing terminals provide a secure connection and are well-suited for automated assembly processes, enhancing overall manufacturing efficiency.

Operating Mode: ENHANCEMENT MODE

As an enhancement-mode FET, this product can operate efficiently at lower voltages, making it suitable for low-power applications.

Maximum Pulsed Drain Current (IDM): 192 A

The capability to handle pulsed currents up to 192A allows for robust performance in high-demand applications without failure.

Maximum Drain Current (Abs) (ID): 48 A

A maximum continuous drain current of 48A makes this FET capable of dealing with substantial loads, ensuring reliability in various operating conditions.

No. of Terminals: 2

With only two terminals, the FET simplifies circuit design while still providing the necessary functionality for most applications.

Maximum Power Dissipation (Abs): 60 W

A power dissipation rating of 60W indicates the FET's capability to manage heat effectively, reducing the risk of thermal failure.

Package Style (Meter): SMALL OUTLINE

The small outline package facilitates efficient space utilization on PCBs, making it ideal for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low on-state resistance, improving the overall efficiency of the device.

Maximum Operating Temperature: 175 °C

This high operational temperature of 175 °C ensures that the FET performs reliably even in demanding environments.

Transistor Element Material: SILICON

Silicon as the base material guarantees good conductivity and thermal performance, essential for high-power applications.

Maximum Drain Current (ID): 48 A

A reiterated maximum drain current of 48A reinforces the device’s design for handling significant electrical loads efficiently.

Maximum Drain-Source On Resistance: 0.01 ohm

With a very low on-resistance, this FET minimizes power loss and heating during operation, enhancing performance and efficiency.

Terminal Position: SINGLE

A single terminal position simplifies circuit integration, reducing the complexity of designs and improving layout flexibility.

Case Connection: DRAIN

A direct drain connection ensures that the FET can quickly manage load changes, enhancing its response time and reliability.

Technical Specifications

Power Field Effect Transistors (FET) STD70N2LH5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

48 A

Maximum Drain Current (ID):

48 A

Maximum Drain-Source On Resistance:

.01 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

192 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD70N2LH5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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