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STD7LNM60N

STMicroelectronics

STD7LNM60N by STMicroelectronics

STD7LNM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 18A max pulsed drain current, and operates up to 150 °C. Ideal for power management in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,216 parts In-Stock

1+ parts

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4,216

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Digiode

USA . 2,909 parts In-Stock

1+ parts

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2,909

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Anansix

USA . 2,750 parts In-Stock

1+ parts

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2,750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,931 parts In-Stock

1+ parts

$0.610

100+ parts

-

1k+ parts

$0.549

10k+ parts

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1,931

$0.610

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$0.549

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MKK Technologies

India . 2,265 parts In-Stock

1+ parts

$1.147

100+ parts

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2,265

$1.147

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DigiPath Technology Company

USA . 2,265 parts In-Stock

1+ parts

$1.147

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10k+ parts

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2,265

$1.147

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Parana Technologies

USA . 1,865 parts In-Stock

1+ parts

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100+ parts

$0.729

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1,865

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$0.729

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Corphita

USA . 247 parts In-Stock

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247

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Overview

Unlock unparalleled performance with the STD7LNM60N from STMicroelectronics, a leader in innovative semiconductor solutions. This N-channel power FET is engineered for exceptional switching efficiency, making it ideal for diverse applications such as power management and automotive systems. With robust reliability and superior thermal performance, this component enhances your designs while ensuring energy savings and longevity. Experience the quality and excellence that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy packaging provides durability and resistance to environmental factors, making the product suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are typically more efficient and have lower on-resistance compared to P-channel, providing better performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse voltage protection, enhancing reliability in circuits that experience switching or transient voltages.

Transistor Application: SWITCHING

Optimized for switching applications, this FET is ideal for driving loads in power electronics, enabling efficient operation.

Surface Mount: YES

Surface mount technology allows for compact design and automated assembly, making it suitable for high-density circuit boards.

Minimum DS Breakdown Voltage: 600 V

A high breakdown voltage makes this FET capable of handling high-voltage applications, increasing safety and versatility.

Package Shape: RECTANGULAR

The rectangular shape maximizes PCB space utilization and enables efficient thermal dissipation.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and are ideal for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for low power consumption and high efficiency in applications, making it a preferred choice for modern electronics.

Maximum Pulsed Drain Current (IDM): 18 A

The ability to handle high pulsed currents makes this FET suitable for demanding switching applications in power supplies and motor drives.

Avalanche Energy Rating (EAS): 119 mJ

A high avalanche energy rating indicates resilience against transient conditions, ensuring reliable operation in tough environments.

No. of Terminals: 2

A simplified two-terminal design enables easy integration into various applications, enhancing versatility.

Maximum Power Dissipation (Abs): 45 W

High power dissipation capability allows for effective heat management and reliable operation in power-intensive applications.

Package Style (Meter): SMALL OUTLINE

The small outline package supports a compact design, suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology facilitates faster switching speeds and lower drive requirements, ensuring efficient circuit performance.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures durability and reliability in demanding environments as well as thermal management.

Transistor Element Material: SILICON

Silicon-based transistors are widely used due to their excellent electrical properties, ensuring performance and stability.

Minimum Operating Temperature: -55 °C

A broad operating temperature range allows for use in extreme environments, enhancing application flexibility.

Maximum Drain Current (ID): 4.5 A

Capable of handling a significant continuous drain current, making it suitable for applications requiring high performance.

Maximum Drain-Source On Resistance: 0.99 ohm

Low on-resistance minimizes power losses during operation, improving efficiency and heat generation.

Terminal Position: SINGLE

A single terminal position simplifies design and installation in electronic assemblies.

Case Connection: DRAIN

Direct case connection to the drain enhances thermal performance and reliability in power applications.

Maximum Feedback Capacitance (Crss): 1.1 pF

Low feedback capacitance allows for high-speed performance with minimal impact on signal integrity.

Technical Specifications

Power Field Effect Transistors (FET) STD7LNM60N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

BULK: 2500

Avalanche Energy Rating (EAS):

119 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.99 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1.1 pF

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD7LNM60N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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