Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STV160NF03LAT4
STMicroelectronics
STV160NF03LAT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, low on-resistance of 0.004 Ω, and a breakdown voltage of 30 V. Ideal for power management in compact electronic devices.
AVALANCHE RATED
330 mJ
SINGLE WITH BUILT-IN DIODE
30 V
160 A
.004 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G10
1
10
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
640 A
Not Qualified
YES
GULL WING
DUAL
SWITCHING
SILICON
STV300NH02L
STV300NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 280 A, a breakdown voltage of 24 V, and operates at temperatures from -55 °C to 175°C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
2296 mJ
24 V
280 A
.001 ohm
R-XDSO-G10
e3
3
175 Cel
-55 Cel
UNSPECIFIED
250
300 W
1120 A
FET General Purpose Power
MATTE TIN
30
STW160N75F3
STW160N75F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
75 V
120 A
.0045 ohm
TO-247AB
R-PSFM-T3
FLANGE MOUNT
330 W
480 A
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
IPB114N03LG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
30 mJ
DRAIN
30 A
.0114 ohm
TO-263AB
R-PSSO-G2
2
245
38 W
210 A
STB185N55F3
STB185N55F3 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 120A Drain Current, and 0.0035 ohm On Resistance. With 480A Pulsed Drain Current, it operates in ENHANCEMENT MODE with 175°C Max Temp.
ULTRA-LOW RESISTANCE
1000 mJ
55 V
.0035 ohm
STB85NS04Z
STB85NS04Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 33 V, and low on-resistance of 0.015 Ω. Ideal for high-performance power management in various electronic devices.
550 mJ
33 V
60 A
.015 ohm
320 A
STP13NK50Z
STP13NK50Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 11A max drain current, and 140W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
240 mJ
500 V
11 A
.48 ohm
TO-220AB
150 Cel
NOT SPECIFIED
140 W
44 A
IRF7769L2TR1PBF
International Rectifier
IRF7769L2TR1PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 500A IDM, 260mJ EAS, and 0.0035 ohm RDS(on). Operates in ENHANCEMENT MODE with max temp of 175°C.
260 mJ
100 V
395 A
20 A
R-XBCC-N9
e1
9
CHIP CARRIER
125 W
500 A
TIN SILVER COPPER
NO LEAD
BOTTOM
NTGS3447PT1G
Onsemi
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 4.7 A; Qualification: Not Qualified; Terminal Finish: TIN; JESD-609 Code: e3;
4.7 A
260
Other Transistors
TIN
NTD3813N-1G
NTD3813N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 16V DS Breakdown Voltage, 114A Pulsed Drain Current, and 0.0145 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR device operates in ENHANCEMENT MODE and has a max power dissipation of 34.9W at 175 °C.
15 mJ
16 V
51 A
9.6 A
.0145 ohm
R-PSSO-F3
34.9 W
114 A
FLAT
NTD3813NT4G
NTD3813NT4G by Onsemi is an N-CHANNEL FET with 16V DS Breakdown Voltage and 114A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0145 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE up to 175 °C.
NTD3817N-35G
NTD3817N-35G by Onsemi is a Power FET with 16V DS Breakdown Voltage, 78A IDM, and 0.029 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with a built-in diode. Operating in enhancement mode, this transistor has a max power dissipation of 25.9W and can handle up to 175 °C temperature.
34.5 A
7.6 A
.029 ohm
R-PSIP-T3
IN-LINE
25.9 W
78 A
NTD3817NT4G
NTD3817NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 16V DS Breakdown Voltage, 78A Pulsed Drain Current, and 0.029 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max temperature of 175 °C, making it ideal for high-power switching circuits.
NTD4856N-1G
NTD4856N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Pulsed Drain Current, and 0.0068 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
180.5 mJ
25 V
89 A
13.3 A
.0068 ohm
60 W
179 A
NTD4856N-35G
NTD4856N-35G by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Pulsed Drain Current, and 0.0068 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 60W at 175 °C.
NTD4857N-1G
NTD4857N-1G by Onsemi is a Power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 25V min DS breakdown voltage, 156A max pulsed drain current, and 0.008 ohm max drain-source resistance. Operating in enhancement mode, it has a 175 °C max temp rating and 56.6W power dissipation capability.
144.5 mJ
12 A
.008 ohm
56.6 W
156 A
SN7002NE6433
Infineon's SN7002NE6433 is a N-CHANNEL FET with 0.2A max drain current and 0.36W power dissipation in single configuration. Ideal for applications requiring enhancement mode operation, such as power management systems or battery protection circuits.
.2 A
.36 W
SN7002WE6433
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .23 A;
.23 A
.5 W
SN7002WE6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .23 A;
BSS169E6906
BSS169E6906 by Infineon is a N-CHANNEL FET with 0.17A max drain current and 0.36W power dissipation in depletion mode. Ideal for applications requiring high temperature resistance up to 150°C, such as power management systems and battery protection circuits.
.17 A
DEPLETION MODE
NTD4855NT4G
NTD4855NT4G by Onsemi is an N-CHANNEL FET with a 25V DS Breakdown Voltage and 197A Pulsed Drain Current, ideal for SWITCHING applications. It features a 0.006 ohm Drain-Source On Resistance, 66.7W Power Dissipation, and operates in ENHANCEMENT MODE at up to 175 °C.
220 mJ
98 A
14 A
.006 ohm
66.7 W
197 A
NTD4858N-35G
NTD4858N-35G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 146A, avalanche energy rating of 112.5mJ, and max operating temperature of 175 °C. Ideal for high-power switching circuits requiring efficient performance in a compact package.
112.5 mJ
73 A
11.2 A
.0093 ohm
54.5 W
146 A
NTD4860N-1G
NTD4860N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 130A IDM, and 0.0111 ohm RDS(on). With an EAS of 84.5 mJ and operating up to 175 °C, it is ideal for high-power switching circuits.
84.5 mJ
65 A
10.4 A
.0111 ohm
50 W
130 A
NTD4860NT4G
NTD4860NT4G by Onsemi is an N-CHANNEL Power FET with a 25V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0111 ohm RDS(on), and operates in ENHANCEMENT MODE.
NTD4863N-1G
NTD4863N-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 98A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features include 60.5mJ EAS, 36.6W Pdiss, and max temp of 175 °C.
60.5 mJ
49 A
9.2 A
.014 ohm
36.6 W
NTD4863NT4G
NTD4863NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 98A, avalanche energy rating of 60.5mJ, and max operating temperature of 175 °C. Ideal for high-power circuit designs requiring efficient switching capabilities in compact spaces.
NTD4865N-1G
NTD4865N-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 87A IDM, and 0.0109 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration with built-in diode in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 33.3W at 175 °C temp.
50 mJ
8.5 A
.0109 ohm
33.3 W
87 A
FET General Purpose Powers
STB16NM50N
STB16NM50N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
470 mJ
15 A
.26 ohm
STF16NM50N
STF16NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 15A. It operates in enhancement mode with a low on-resistance of 0.26Ω. Ideal for high-power circuits, it ensures efficient performance up to 150 °C.
ISOLATED
30 W
STI16NM50N
STI16NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
40
STP16NF25
STP16NF25 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 13 A and a breakdown voltage of 250 V. It operates in enhancement mode with a power dissipation of up to 90 W. This versatile transistor is suitable for various electronic circuits.
100 mJ
250 V
13 A
.235 ohm
90 W
52 A
STP16NM50N
STP16NM50N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW16NM50N
STW16NM50N by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Its robust design ensures reliability in high-power circuits.
TO-247
e3/e1
MATTE TIN/TIN SILVER COPPER
NTB5605T4G
NTB5605T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 55A.
338 mJ
60 V
18.5 A
.14 ohm
P-CHANNEL
88 W
55 A
STB23NM60N
STB23NM60N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 19A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
700 mJ
600 V
19 A
.18 ohm
150 W
76 A
STD60N3LH5
STD60N3LH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 48A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 192A Pulsed Drain Current, and 0.0114 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 60W and can withstand temperatures up to 175°C.
160 mJ
48 A
TO-252
192 A
Matte Tin (Sn) - annealed
STF23NM60N
STF23NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
35 W
STI23NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSIP-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP23NM60N
STP23NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and a max drain current of 19A. It offers a low on-resistance of 0.18Ω and operates at up to 150 °C. This robust FET is suitable for high-power circuits.
STU60N3LH5
STU60N3LH5 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 48 A, a breakdown voltage of 30 V, and operates at temperatures from -55 °C to 175°C. Its compact design ensures efficient power management in various electronic devices.
TO-251
STW23NM60N
STW23NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
BUZ11_R4941
Fairchild Semiconductor
Fairchild Semiconductor's BUZ11_R4941 is a N-CHANNEL FET with 30A ID and 75W power dissipation. Ideal for applications requiring high drain current, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150°C temperature.
e0
75 W
Tin/Lead (Sn85Pb15)
SPB21N10G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 21 A;
21 A
IRF7413QTRPBF
IRF7413QTRPBF by International Rectifier is a N-CHANNEL FET with 13A max drain current and 2.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various electronic devices requiring efficient power management in compact spaces.
2.5 W
IRF7341QTRPBF
IRF7341QTRPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS with BUILT-IN DIODE, capable of handling up to 42A IDM and has a low 0.05 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
140 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5.1 A
.05 ohm
MS-012AA
R-PDSO-G8
8
2.4 W
42 A
IRLR7843CPBF
IRLR7843CPBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 1440mJ EAS, and 0.0033 ohm RDS(on). With a max power dissipation of 140W and operating temperature of 175°C, it offers high performance in a small outline package.
1440 mJ
161 A
.0033 ohm
TO-252AA
620 A
Matte Tin (Sn) - with Nickel (Ni) barrier
IRLR7843CTRPBF
IRLR7843CTRPBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 620A and EAS of 1440mJ, making it suitable for high-power operations. With a 0.0033 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C.
MATTE TIN OVER NICKEL
STB200N4F3
STB200N4F3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
862 mJ
40 V
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