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SN7002NE6433

Infineon Technologies

SN7002NE6433 by Infineon Technologies

Infineon's SN7002NE6433 is a N-CHANNEL FET with 0.2A max drain current and 0.36W power dissipation in single configuration. Ideal for applications requiring enhancement mode operation, such as power management systems or battery protection circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 11,927 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

USA . 209 parts In-Stock

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Modulus Dynamics

Lithuania . 13,388 parts In-Stock

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$1.367

100+ parts

$1.312

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$1.258

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13,388

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AZTECH Wire

Italy . 748 parts In-Stock

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$10.008

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748

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Ampacity Inc.

Singapore . 1,456 parts In-Stock

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$28.050

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$28.050

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QUARKTWIN TECHNOLOGY LTD

USA . 27,921 parts In-Stock

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Continental Prestige Electronics

USA . 6,606 parts In-Stock

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Argo Parts USA

USA . 1,382 parts In-Stock

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Corphita

USA . 430 parts In-Stock

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430

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Bastille Electronics

Australia . 81 parts In-Stock

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Overview

Experience superior performance and reliability with the SN7002NE6433 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers quality power field effect transistors that are perfect for a wide range of applications. The N-channel configuration and enhancement mode operation ensure efficiency and precision in your designs. With a maximum drain current of 0.2A and a maximum power dissipation of 0.36W, this transistor offers exceptional value and benefits to customers looking for high-quality components for their projects. Trust Infineon for cutting-edge technology and unparalleled performance.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient electron flow, making this FET suitable for high-speed operations.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making this FET a cost-effective choice for applications with limited space.

Surface Mount: YES

The surface mount capability enables easy and secure placement on PCBs, improving assembly efficiency and reliability.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation provides precise control over the FET's conductivity, making it ideal for precise voltage regulation in various applications.

Maximum Drain Current (Abs): 0.2A

The high maximum drain current rating ensures reliable performance under heavy loads, making this FET a reliable choice for power applications.

Maximum Power Dissipation (Abs): 0.36W

The low power dissipation allows for efficient energy conversion and minimizes heat generation, ensuring the FET's longevity and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high switching speeds and low ON-resistance, improving overall performance and efficiency.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the FET to operate in harsh environments without compromising performance or reliability.

Maximum Drain Current (ID): 0.2A

The high maximum drain current rating ensures reliable operation under heavy loads, making this FET suitable for power-hungry applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance simplifies the soldering process and ensures secure connections, making this FET easy to integrate into circuit designs.

Technical Specifications

Power Field Effect Transistors (FET) SN7002NE6433 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

SN7002NE6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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