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NTGS3447PT1G

Onsemi

NTGS3447PT1G by Onsemi

Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 4.7 A; Qualification: Not Qualified; Terminal Finish: TIN; JESD-609 Code: e3;

Median Price

$0.203

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,980 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

8,980

-

$0.211

$0.175

$0.156

Verical

USA . 8,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.195

8,980

-

-

-

$0.195

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.155

100+ parts

-

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-

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900

$0.155

-

-

-

Digiode

USA . 1,589 parts In-Stock

1+ parts

$0.164

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-

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1,589

$0.164

-

-

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Vyrian

USA . 8,245 parts In-Stock

1+ parts

-

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8,245

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 4,966 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

4,966

$0.090

-

$0.061

$0.061

Ampacity Inc.

Singapore . 8,802 parts In-Stock

1+ parts

$0.147

100+ parts

-

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-

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-

8,802

$0.147

-

-

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Corohmni

South Africa . 63 parts In-Stock

1+ parts

$0.149

100+ parts

-

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63

$0.149

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-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.152

100+ parts

-

1k+ parts

$0.146

10k+ parts

-

1,000

$0.152

-

$0.146

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Corphita

USA . 185 parts In-Stock

1+ parts

$0.156

100+ parts

-

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185

$0.156

-

-

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AZTECH Wire

Italy . 614 parts In-Stock

1+ parts

$10.660

100+ parts

-

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614

$10.660

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SupplyDigital Components

Austria . 7,776 parts In-Stock

1+ parts

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7,776

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A-Z Elektronik GmbH

Germany . 5,409 parts In-Stock

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5,409

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Kulean Microsystems

USA . 4,650 parts In-Stock

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4,650

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-

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Problanco Electronics

Mexico . 3,472 parts In-Stock

1+ parts

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3,472

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TANS Electronics

Latvia . 1,821 parts In-Stock

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1,821

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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444

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Technical Specifications

Power Field Effect Transistors (FET) NTGS3447PT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

4.7 A

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTGS3447PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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