Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IPA105N15N3GXKSA1
Infineon Technologies
Infineon's IPA105N15N3GXKSA1 is a N-CHANNEL FET with 150V DS Breakdown Voltage, 37A ID, and 0.0105 ohm RDS. Ideal for power applications in enhancement mode operation, it features a built-in diode and can handle up to 148A IDM pulsed drain current. Suitable for various industrial uses due to its high energy rating of 740mJ.
740 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
150 V
37 A
.0105 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
148 A
Not Qualified
NO
TIN
THROUGH-HOLE
SINGLE
SILICON
IPA180N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 100 V; JESD-609 Code: e3;
59 mJ
100 V
28 A
.018 ohm
112 A
SWITCHING
IPA50R199CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .199 ohm; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
436 mJ
500 V
17 A
.199 ohm
150 Cel
40 A
IPA50R250CPXKSA1
Infineon's IPA50R250CPXKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, 0.25 ohm RDS(on), and 31A IDM. Ideal for switching applications, it operates in enhancement mode with a max temperature of 150°C.
345 mJ
13 A
.25 ohm
31 A
IPA50R299CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Terminal Position: SINGLE; JESD-30 Code: R-PSFM-T3;
289 mJ
12 A
.299 ohm
26 A
IPA50R350CPXKSA1
Infineon's IPA50R350CPXKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, 22A IDM, and 0.35 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.
246 mJ
10 A
.35 ohm
22 A
IPA50R399CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 20 A; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3;
215 mJ
9 A
.399 ohm
20 A
IPA50R520CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Position: SINGLE; Terminal Finish: TIN;
166 mJ
7 A
.52 ohm
IPA60R125CPXKSA1
Infineon's IPA60R125CPXKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 82A and 0.125 ohm RDS(on), it operates in enhancement mode at up to 150°C. The transistor's built-in diode, isolated case connection, and flange mount package make it suitable for high-power systems.
708 mJ
600 V
25 A
.125 ohm
82 A
IPA60R299CPXKSA1
Infineon's IPA60R299CPXKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage and 34A IDM. Ideal for switching applications, it features a built-in diode, 0.299 ohm RDS(on), and operates in enhancement mode. The transistor has a max operating temperature of 150°C and comes in a rectangular package with through-hole terminals.
290 mJ
11 A
34 A
IPP037N06L3GXKSA1
IPP037N06L3GXKSA1 by Infineon Technologies is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0037 ohm Drain-Source On Resistance, and 90A Max Drain Current. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it can handle up to 360A Pulsed Drain Current.
LOGIC LEVEL COMPATIBLE
165 mJ
60 V
90 A
.0037 ohm
360 A
IPI111N15N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Package Style (Meter): IN-LINE; Terminal Finish: TIN;
330 mJ
83 A
.0111 ohm
TO-262AA
R-PSIP-T3
IN-LINE
332 A
IPB50R140CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 56 A; Transistor Element Material: SILICON; Terminal Form: GULL WING;
616 mJ
DRAIN
23 A
.14 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
260
56 A
YES
GULL WING
30
IPB50R199CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 500 V; Package Body Material: PLASTIC/EPOXY;
IPB50R250CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 500 V; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): SMALL OUTLINE;
IPB60R199CPAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Drain Current (ID): 16 A; Avalanche Energy Rating (EAS): 436 mJ;
16 A
51 A
Matte Tin (Sn)
IPD035N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: .0035 ohm; Qualification: Not Qualified;
162 A
.0035 ohm
TO-252AA
NOT SPECIFIED
IPD048N06L3GBTMA1
Infineon's IPD048N06L3GBTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, 90A max drain current, and 0.0048 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
68 mJ
.0048 ohm
IPD053N06N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0053 ohm; Maximum Drain Current (ID): 90 A;
.0053 ohm
IPD068N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 130 mJ;
130 mJ
.0068 ohm
TO-252
IPD068P03L3GBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .0068 ohm;
149 mJ
30 V
70 A
P-CHANNEL
280 A
IPS075N03LGAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; JEDEC-95 Code: TO-251;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
50 mJ
50 A
.0114 ohm
TO-251
350 A
IPD079N06L3GBTMA1
Infineon's IPD079N06L3GBTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 43mJ EAS, and 0.0079 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a small outline package.
43 mJ
.0079 ohm
200 A
IPD088N06N3GBTMA1
Infineon Technologies' IPD088N06N3GBTMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 200A, and low on-resistance of 0.0088 ohm. This transistor is suitable for switching applications in various industries.
.0088 ohm
IPS090N03LGAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 70 mJ; Qualification: Not Qualified; JESD-609 Code: e3;
70 mJ
.0135 ohm
IPD096N08N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 90 mJ; Case Connection: DRAIN;
90 mJ
80 V
73 A
.0096 ohm
292 A
IPD110N12N3GBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Avalanche Energy Rating (EAS): 120 mJ;
120 mJ
120 V
75 A
.011 ohm
-55 Cel
136 W
300 A
IPS110N12N3GBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 120 mJ; Operating Mode: ENHANCEMENT MODE;
IPD122N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
59 A
.0122 ohm
236 A
IPD135N08N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
45 A
180 A
IPD144N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Avalanche Energy Rating (EAS): 240 mJ; JESD-30 Code: R-PSSO-G2;
AVALANCHE RATED
240 mJ
.0144 ohm
IPD180N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING; No. of Elements: 1;
43 A
172 A
IPD220N06L3GBTMA1
IPD220N06L3GBTMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 120A IDM, and 0.022 ohm RDS(on). With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for high-power switching in various electronic devices.
13 mJ
30 A
.022 ohm
120 A
IPD230N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Additional Features: AVALANCHE RATED; No. of Terminals: 2;
150 mJ
.023 ohm
IPD250N06N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
.025 ohm
IPD400N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2; Additional Features: AVALANCHE RATED;
80 mJ
27 A
.04 ohm
108 A
IPD60R2K0C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
11 mJ
2 ohm
6 A
IPI50R199CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; No. of Elements: 1;
IPI50R250CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 13 A; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE;
IPI50R299CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 26 A;
IPI50R399CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Terminal Position: SINGLE;
IPI60R099CPAAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE; Qualification: Not Qualified;
800 mJ
.105 ohm
93 A
IPI60R600CPAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 15 A; Transistor Element Material: SILICON;
144 mJ
6.1 A
.6 ohm
15 A
IPI037N08N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 510 mJ;
510 mJ
100 A
.00375 ohm
214 W
400 A
FET General Purpose Power
IPP062NE7N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Package Shape: RECTANGULAR;
160 mJ
75 V
80 A
.0062 ohm
320 A
IPI076N12N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-262AA; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
230 mJ
.0076 ohm
IPP076N12N3GXKSA1
IPP076N12N3GXKSA1 by Infineon is a N-CHANNEL FET with 120V DS Breakdown Voltage, 0.0076 ohm RDS(on), and 100A ID. Ideal for SWITCHING applications due to its 400A IDM and 230mJ EAS ratings. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and features a built-in DIODE.
IPP60R099CPXKSA1
Infineon's IPP60R099CPXKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 93A IDM, 800mJ EAS, and 0.099ohm RDS(ON). Operating in ENHANCEMENT MODE at up to 150°C, it has a SILICON element and TIN finish.
.099 ohm
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