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IPD048N06L3GBTMA1

Infineon Technologies

IPD048N06L3GBTMA1 by Infineon Technologies

Infineon's IPD048N06L3GBTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, 90A max drain current, and 0.0048 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.

Median Price

$0.634

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 676 parts In-Stock

1+ parts

$0.404

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676

$0.404

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Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$2.610

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4

$2.610

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Verical

USA . 676 parts In-Stock

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$0.610

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676

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$0.610

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Rochester

USA . 167 parts In-Stock

1+ parts

-

100+ parts

$0.659

1k+ parts

$0.547

10k+ parts

$0.488

167

-

$0.659

$0.547

$0.488

Distributors (In-Stock)

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Digiode

USA . 833 parts In-Stock

1+ parts

$0.173

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833

$0.173

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Nova Conductors

Japan . 500 parts In-Stock

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$1.060

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500

$1.060

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Chip Stock

USA . 22,260 parts In-Stock

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22,260

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Vyrian

USA . 6,115 parts In-Stock

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6,115

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Distributors (Availability)

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Ampacity Inc.

Singapore . 338 parts In-Stock

1+ parts

$0.155

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338

$0.155

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Semicontronic

India . 126 parts In-Stock

1+ parts

$0.155

100+ parts

$0.151

1k+ parts

$0.150

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126

$0.155

$0.151

$0.150

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Corphita

USA . 352 parts In-Stock

1+ parts

$0.164

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352

$0.164

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Modulus Dynamics

Lithuania . 11,090 parts In-Stock

1+ parts

$0.609

100+ parts

$0.585

1k+ parts

$0.560

10k+ parts

-

11,090

$0.609

$0.585

$0.560

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Continental Prestige Electronics

USA . 5,544 parts In-Stock

1+ parts

$0.643

100+ parts

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$0.630

5,544

$0.643

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$0.630

Argo Parts USA

USA . 397 parts In-Stock

1+ parts

$0.643

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$0.624

397

$0.643

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-

$0.624

Aztec Data Supply Inc.

USA . 808 parts In-Stock

1+ parts

$0.990

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808

$0.990

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Netroflash

USA . 2,000 parts In-Stock

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$1.060

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$1.039

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2,000

$1.060

$1.039

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.230

100+ parts

$1.168

1k+ parts

$1.168

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500

$1.230

$1.168

$1.168

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Corohmni

South Africa . 379 parts In-Stock

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$1.555

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379

$1.555

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Microchip USA

USA . 393 parts In-Stock

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$3.544

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393

$3.544

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Benley Electronics

USA . 8 parts In-Stock

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$7.500

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8

$7.500

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RC Electronics

USA . 39,087 parts In-Stock

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$1.200

1k+ parts

$1.090

10k+ parts

$1.060

39,087

-

$1.200

$1.090

$1.060

Authorized Procurement Solutions

USA . 6,800 parts In-Stock

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6,800

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the IPD048N06L3GBTMA1 from Infineon Technologies. This high-quality N-channel Power FET is a game-changer in switching applications, offering unparalleled performance and reliability. With a maximum pulsed drain current of 360A and a minimum DS breakdown voltage of 60V, this transistor delivers exceptional efficiency and durability. Whether you're designing automotive systems, industrial controls, or robotics, this FET's built-in diode, small outline package, and low on-resistance of 0.0048 ohm will exceed your expectations. Elevate your projects with the IPD048N06L3GBTMA1 – the ultimate choice for cutting-edge technology and superior functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient and reliable operation in a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and can help with reverse voltage protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in those scenarios.

Surface Mount: YES

Facilitates easy PCB assembly and saves space on the board.

Minimum DS Breakdown Voltage: 60 V

Provides a high level of voltage tolerance, making the transistor suitable for a variety of high-power applications.

Package Shape: RECTANGULAR

Allows for efficient placement on the circuit board and easy integration into the overall design.

Terminal Form: GULL WING

Offers a reliable connection and facilitates soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's operation and enhances efficiency.

Maximum Pulsed Drain Current (IDM): 360 A

Can handle high peak currents, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 68 mJ

Can withstand energy spikes, ensuring reliability in transient conditions.

No. of Terminals: 2

Simplifies the connection process and reduces complexity in the circuit design.

Package Style (Meter): SMALL OUTLINE

Takes up minimal space on the PCB, allowing for denser designs and more compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliability in a variety of operating conditions.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without sacrificing performance or reliability.

Transistor Element Material: SILICON

Offers good thermal conductivity and stability, ensuring long-term performance.

Terminal Finish: TIN

Provides a reliable and corrosion-resistant finish for the terminal connections.

Maximum Drain Current (ID): 90 A

Suitable for high-power applications requiring a significant current-carrying capacity.

Maximum Drain-Source On Resistance: 0.0048 ohm

Offers low on-resistance for minimal power loss and efficient operation.

Terminal Position: SINGLE

Simplifies the connection process and reduces the chances of error during assembly.

Case Connection: DRAIN

Allows for efficient heat dissipation and protection of the internal components.

Technical Specifications

Power Field Effect Transistors (FET) IPD048N06L3GBTMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

68 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

90 A

Maximum Drain-Source On Resistance:

.0048 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

360 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPD048N06L3GBTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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