Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPD034N06N3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0034 ohm Drain-Source Resistance, and 100A Max Drain Current. Ideal for SWITCHING applications due to its 400A Pulsed Drain Current capability and ENHANCEMENT MODE operation. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
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This material provides durability and protection for the transistor, making it suitable for various applications.
N-Channel FETs typically have better performance characteristics compared to P-Channel FETs, making them a popular choice for switching applications.
The built-in diode simplifies circuit design and can help protect against reverse voltage spikes.
Designed specifically for switching applications, this FET offers fast switching speeds and low resistance for efficient operation.
Surface mount packaging saves space and allows for easy assembly onto circuit boards.
With a minimum breakdown voltage of 60 V, this FET can handle higher voltage applications with ease.
The rectangular shape allows for easy mounting and efficient use of space on a PCB.
The gull wing terminal form provides mechanical strength and reliable connections for the FET.
Enhancement mode transistors are normally off and require a positive voltage at the gate to turn on, which can be advantageous for certain applications.
With a high maximum pulsed drain current, this FET can handle large current spikes without overheating.
The high avalanche energy rating indicates the FET's ability to withstand high-energy pulses and transient events.
With only 2 terminals, this FET is simple to integrate into circuit designs.
The small outline package style offers compact size and efficient use of PCB real estate.
Metal-oxide semiconductor technology provides reliable performance and low power consumption for the FET.
With a high maximum operating temperature, this FET can withstand elevated temperatures in demanding environments.
Silicon is a common semiconductor material known for its stability, making it ideal for transistors.
Tin terminal finish provides corrosion resistance and reliable electrical connections for the FET.
The high maximum drain current rating ensures that this FET can handle a significant amount of continuous current.
The low on-resistance of the FET results in minimal power loss and efficient operation in switching applications.
With a single terminal position, this FET is easy to mount and connect in circuit designs.
The case connection at the drain terminal provides a convenient point for thermal management and grounding in the circuit.
Power Field Effect Transistors (FET) IPD034N06N3GATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
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Minimum DS Breakdown Voltage:
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Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Qualification:
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IPD034N06N3GATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Cover Tape Width Cancellation 14/Jul/2015 Cover Tape Width Update 17/Jun/2015
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
Semitronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Texas Instruments
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
BAV99
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Commercial Components
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
Mde Semiconductor
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148-GS08
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
2N7002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
1N5819HW-7-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
IRF5210PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
IRF640
Vishay Intertechnology's IRF640 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 125W and operates in ENHANCEMENT MODE. Suitable for various electronic devices requiring high current switching capabilities.
FDD4141
The Onsemi FDD4141 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has low 0.0123 ohm Drain-Source Resistance and can handle up to 69W power dissipation.
AUIRFZ44N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
IPD50P04P4L11ATMA2
Infineon Technologies
Infineon's IPD50P04P4L11ATMA2 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 200A IDM, and 0.0106 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and 58W power dissipation.
FDMS86101
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Minimum DS Breakdown Voltage: 100 V; Terminal Position: DUAL;
SUM110P06-08L-E3
Vishay Intertechnology's SUM110P06-08L-E3 is a P-channel FET with 60V DS breakdown voltage and 200A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.008 ohm max RDS(on), and 272W max power dissipation.
IRF9530
Harris Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN;
IRLML0060TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
STH13N120K5-2AG
STMicroelectronics
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BS170
Itt Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF9530PBF
Vishay Intertechnology's IRF9530PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.3 ohm RDS(on), and 88W max power dissipation.
JANTX2N6796
JANTX2N6796 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 75mJ EAS, and 0.195 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 25W in a CYLINDRICAL package.
NTMFS5C604NLT1G
NTMFS5C604NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 900A IDM, and 0.0017 ohm RDS(on). It is used in power applications due to its 200W max power dissipation, -55 to 175 °C operating temp range, and built-in diode configuration.
BSP320SH6327XTSA1
Infineon's BSP320SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 11.6A IDM, 0.12 ohm RDS(on), and 150°C Max Operating Temp. Ideal for automotive applications due to AEC-Q101 compliance, it offers high efficiency in compact designs with its small outline package and built-in diode configuration.
IRF7493TRPBF
Infineon's IRF7493TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 74A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.015 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has a max power dissipation of 2.5W at 150°C.
BSZ097N04LSGATMA1
Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
FDS8984
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Avalanche Energy Rating (EAS): 32 mJ; Package Shape: RECTANGULAR;
IRFR3710ZTRPBF
IRFR3710ZTRPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 220A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 175°C.
BSZ042N06NSATMA1
Infineon's BSZ042N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 160A max pulsed drain current and 0.0042 ohm max drain-source resistance. Operating in enhancement mode, this MOSFET has an operating temperature range of -55 to 150 °C.
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IPD048N06L3GBTMA1
Infineon's IPD048N06L3GBTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, 90A max drain current, and 0.0048 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
IPD042P03L3GATMA1
Infineon's IPD042P03L3GATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 280A IDM, and 0.0068 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features include METAL-OXIDE SEMICONDUCTOR tech, 175°C Max Temp, and GULL WING terminals for surface mount assembly.
IPD053N08N3GATMA1
Infineon's IPD053N08N3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, 0.0053 ohm RDS(on), and 360A IDM. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a compact GULL WING package.
IPD068P03L3GATMA1
Infineon's IPD068P03L3GATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 280A IDM, and 0.0068 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates up to 175°C.
IPD031N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE;
IPD079N06L3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0079 ohm; Terminal Position: SINGLE;
IPD068N10N3GATMA1
IPD068N10N3GATMA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 0.0068 ohm RDS(on), and 90A ID. It's used for switching applications in enhancement mode, with 360A IDM and 130mJ EAS ratings.
IPD042P03L3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 70 A; Minimum DS Breakdown Voltage: 30 V;
IPD036N04LGATMA1
IPD036N04LGATMA1 by Infineon is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 55mJ, with a Drain Current (ID) of 90A and 0.0049 ohm On Resistance. Operating b/w -55 to 175 °C, it has GULL WING terminals in a RECTANGULAR package.
IPD088N06N3GBTMA1
Infineon Technologies' IPD088N06N3GBTMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 200A, and low on-resistance of 0.0088 ohm. This transistor is suitable for switching applications in various industries.
IPD046N08N5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Avalanche Energy Rating (EAS): 75 mJ; Minimum Operating Temperature: -55 Cel;
IPD025N06NATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
IPD040N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 400 A;
IPD033N06N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE;
IPD031N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 90 A;
IPD033N06NATMA1
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1;
IPD025N06N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN;
IPD031N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Finish: TIN; JESD-609 Code: e3;
IPD034N06N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Finish: TIN; Maximum Drain Current (Abs) (ID): 100 A;
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