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IPA105N15N3GXKSA1

Infineon Technologies

IPA105N15N3GXKSA1 by Infineon Technologies

Infineon's IPA105N15N3GXKSA1 is a N-CHANNEL FET with 150V DS Breakdown Voltage, 37A ID, and 0.0105 ohm RDS. Ideal for power applications in enhancement mode operation, it features a built-in diode and can handle up to 148A IDM pulsed drain current. Suitable for various industrial uses due to its high energy rating of 740mJ.

Median Price

$3.926

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 400 parts In-Stock

1+ parts

$3.773

100+ parts

$2.688

1k+ parts

$2.040

10k+ parts

$1.984

400

$3.773

$2.688

$2.040

$1.984

Chip1Stop

Japan . 426 parts In-Stock

1+ parts

$4.080

100+ parts

$2.440

1k+ parts

$2.280

10k+ parts

$2.060

426

$4.080

$2.440

$2.280

$2.060

Mouser Electronics

USA . 41 parts In-Stock

1+ parts

$5.090

100+ parts

$2.640

1k+ parts

$2.160

10k+ parts

-

41

$5.090

$2.640

$2.160

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DigiKey

USA . 1 parts In-Stock

1+ parts

$5.490

100+ parts

-

1k+ parts

-

10k+ parts

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1

$5.490

-

-

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Distrelec

Netherlands . 100 parts In-Stock

1+ parts

$6.957

100+ parts

$4.932

1k+ parts

-

10k+ parts

-

100

$6.957

$4.932

-

-

Rochester

USA . 31,300 parts In-Stock

1+ parts

-

100+ parts

$2.170

1k+ parts

$1.940

10k+ parts

$1.820

31,300

-

$2.170

$1.940

$1.820

Verical

USA . 30,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.425

10k+ parts

$2.275

30,800

-

-

$2.425

$2.275

RS (Exports)

UK . 336 parts In-Stock

1+ parts

-

100+ parts

$3.321

1k+ parts

$3.147

10k+ parts

-

336

-

$3.321

$3.147

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$2.899

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$2.899

-

-

-

Digiode

USA . 531 parts In-Stock

1+ parts

$3.584

100+ parts

-

1k+ parts

-

10k+ parts

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531

$3.584

-

-

-

TME

Poland . 116 parts In-Stock

1+ parts

$5.140

100+ parts

$3.400

1k+ parts

-

10k+ parts

-

116

$5.140

$3.400

-

-

Vyrian

USA . 7,319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,319

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 116 parts In-Stock

1+ parts

$0.889

100+ parts

-

1k+ parts

-

10k+ parts

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116

$0.889

-

-

-

Aztec Data Supply Inc.

USA . 4,025 parts In-Stock

1+ parts

$1.262

100+ parts

-

1k+ parts

-

10k+ parts

-

4,025

$1.262

-

-

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Modulus Dynamics

Lithuania . 21,899 parts In-Stock

1+ parts

$1.779

100+ parts

$1.708

1k+ parts

$1.637

10k+ parts

-

21,899

$1.779

$1.708

$1.637

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Ampacity Inc.

Singapore . 10,251 parts In-Stock

1+ parts

$1.970

100+ parts

-

1k+ parts

-

10k+ parts

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10,251

$1.970

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$2.841

100+ parts

-

1k+ parts

$2.728

10k+ parts

-

50

$2.841

-

$2.728

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Continental Prestige Electronics

USA . 4,530 parts In-Stock

1+ parts

$2.899

100+ parts

-

1k+ parts

-

10k+ parts

$2.841

4,530

$2.899

-

-

$2.841

Argo Parts USA

USA . 2,511 parts In-Stock

1+ parts

$2.899

100+ parts

-

1k+ parts

-

10k+ parts

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2,511

$2.899

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Corphita

USA . 484 parts In-Stock

1+ parts

$3.396

100+ parts

-

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484

$3.396

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Microchip USA

USA . 9,273 parts In-Stock

1+ parts

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9,273

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Perfect Parts

USA . 1,393 parts In-Stock

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1,393

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Eastek

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Glotronic Ltd.

UK . 252 parts In-Stock

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252

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Overview

Looking for a reliable power Field Effect Transistor (FET) for your next project? Look no further than the IPA105N15N3GXKSA1 by Infineon Technologies. With high-quality materials and advanced technology, this N-CHANNEL FET offers exceptional performance and reliability. Whether you're working on automotive applications or industrial systems, this transistor is designed to handle it all. Experience the value and benefits of Infineon's IPA105N15N3GXKSA1 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for internal components, making it a reliable choice.

Polarity or Channel Type:

N-CHANNEL - Offers efficient performance and lower power consumption, ideal for various applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space, enhancing overall functionality.

Minimum DS Breakdown Voltage:

150 V - Ensures reliable operation under high voltage conditions, increasing product longevity.

Package Shape:

RECTANGULAR - Facilitates easy installation and compatibility with standard mounting options.

Terminal Form:

THROUGH-HOLE - Enables secure connections and stability, reducing the risk of disconnection.

Operating Mode:

ENHANCEMENT MODE - Allows for precise control and efficient power management, optimizing performance.

Maximum Pulsed Drain Current (IDM):

148 A - Handles high current loads without overheating, ensuring continual operation.

Avalanche Energy Rating (EAS):

740 mJ - Provides robust protection against power surges, enhancing product reliability.

No. of Terminals:

3 - Simplifies circuit connections and provides compatibility with a wide range of devices.

Package Style (Meter):

FLANGE MOUNT - Offers secure mounting and easy integration into existing systems.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Ensures high efficiency and performance, making it suitable for demanding applications.

Maximum Operating Temperature:

175 °C - Allows for reliable operation in high-temperature environments, ensuring long-term durability.

Transistor Element Material:

SILICON - Offers excellent conductivity and resistance properties, enhancing overall performance.

Terminal Finish:

TIN - Provides corrosion resistance and ensures long-lasting connections, increasing product lifespan.

Maximum Drain Current (ID):

37 A - Supports high current applications with stability and efficiency, making it a versatile choice.

Maximum Drain-Source On Resistance:

0.0105 ohm - Minimizes power loss and increases energy efficiency, improving overall performance.

Terminal Position:

SINGLE - Simplifies installation and prevents confusion during connection, ensuring a hassle-free setup.

Case Connection:

ISOLATED - Enhances safety by isolating components from external interference, ensuring reliable operation.

Technical Specifications

Power Field Effect Transistors (FET) IPA105N15N3GXKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

740 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

37 A

Maximum Drain-Source On Resistance:

.0105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

148 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

IPA105N15N3GXKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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