Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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NTMFD4902NFT1G
Onsemi
NTMFD4902NFT1G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a small outline package. Operating at up to 150 °C, it offers high power dissipation of 3.45W for efficient performance.
28.8 mJ
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
23 A
13.5 A
.01 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F8
e3
1
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
3.45 W
60 A
FET General Purpose Power
YES
MATTE TIN
FLAT
DUAL
30
SWITCHING
SILICON
NTMFS5830NLT1G
NTMFS5830NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 0.0036 ohm max RDS(on). It is used in applications requiring high power dissipation up to 125W, such as power supplies and motor control systems.
361 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
172 A
28 A
.0036 ohm
R-PDSO-F5
5
NOT SPECIFIED
125 W
690 A
Tin (Sn)
NVD5117PLT4G
NVD5117PLT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 419A IDM, and 0.022 ohm RDS(on). Ideal for power applications requiring high drain current handling capabilities. Suitable for use in enhancement mode operation at up to 175°C operating temperature.
240 mJ
60 V
61 A
11 A
.022 ohm
R-PSSO-G2
175 Cel
P-CHANNEL
118 W
419 A
Other Transistors
Matte Tin (Sn) - annealed
GULL WING
SINGLE
NVMFS5832NLT1G
NVMFS5832NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package suitable for high-power applications like motor control and power supplies. Operating in ENHANCEMENT MODE, it can handle up to 523A Pulsed Drain Current.
120 A
.0072 ohm
127 W
523 A
NVMFS5832NLT3G
NVMFS5832NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for high-power applications requiring fast switching capabilities. Operating in ENHANCEMENT MODE, it offers a max power dissipation of 127W at temperatures up to 175°C.
NVTFS4824NTAG
NVTFS4824NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 46A Drain Current, and 0.0075 ohm On Resistance. Ideal for power applications requiring high current handling in compact spaces. Operates in Enhancement Mode with built-in diode, suitable for surface mount designs.
72 mJ
46 A
.0075 ohm
21 W
402 A
NVTFS4824NTWG
NVTFS4824NTWG by Onsemi is a single N-channel FET with built-in diode, featuring a min DS breakdown voltage of 30V and max pulsed drain current of 402A. Ideal for power applications, this MOSFET has an avalanche energy rating of 72mJ and max operating temperature of 175 °C.
RSD175N10TL
ROHM
ROHM RSD175N10TL is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.119 ohm RDS(ON), and 35A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.
100 V
17.5 A
.119 ohm
e2
35 A
TIN COPPER
10
NTMFS4946NT1G
NTMFS4946NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 205mJ EAS, and 0.0051 ohm RDS(ON). Operating temp range -55 to 150 °C.
205 mJ
100 A
12.7 A
.0051 ohm
289 pF
R-PDSO-F6
6
-55 Cel
55.5 W
200 A
STF11N65K3
STMicroelectronics
STF11N65K3 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.85 ohm max drain-source resistance. This MOSFET operates in enhancement mode and has a max power dissipation of 35W, making it suitable for high-power applications.
212 mJ
ISOLATED
650 V
.85 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
35 W
40 A
NO
THROUGH-HOLE
NTDV3055L104-1G
NTDV3055L104-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and a built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a max power dissipation of 48W in a RECTANGULAR package.
61 mJ
12 A
.104 ohm
R-PSIP-T3
IN-LINE
48 W
45 A
NTDV3055L104T4G
NTDV3055L104T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with a built-in diode in a PLASTIC/EPOXY package. Operating in enhancement mode, this MOSFET has a max power dissipation of 48W and can handle up to 175 °C temperature.
NVD5807NT4G
NVD5807NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 33W. The transistor features a built-in diode and can handle up to 175°C operating temperature.
29.4 mJ
.031 ohm
33 W
STB18N55M5
STB18N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 52A IDM, and 0.24 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
ULTRA-LOW RESISTANCE
200 mJ
550 V
13 A
.24 ohm
TO-263AB
245
90 W
52 A
STI11NM80
STI11NM80 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 400mJ EAS, operating in ENHANCEMENT MODE at up to 150 °C. With 0.4 ohm RDS(on) and 150W Pd, it's suitable for high-power circuits requiring reliable performance.
400 mJ
800 V
.4 ohm
TO-262AA
150 W
44 A
Matte Tin (Sn)
STI260N6F6
STI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A ID, and 0.003 ohm RDS(on). Ideal for SWITCHING applications due to its 480A IDM and 300W Pd. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and Matte Tin finish.
.003 ohm
300 W
480 A
STI26NM60N
STI26NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, 80A IDM, and 0.165 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a SINGLE configuration with BUILT-IN DIODE and operates in THROUGH-HOLE package style.
610 mJ
600 V
20 A
.165 ohm
80 A
NTMFS4983NFT1G
NTMFS4983NFT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.0031 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 150 °C max temp.
101 mJ
106 A
22 A
.0031 ohm
38 W
320 A
NTMFS4983NFT3G
NTMFS4983NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 101mJ EAS, and 0.0031 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and DUAL terminal position.
NTTFS4985NFTWG
NTTFS4985NFTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 192A IDM, and 0.0052 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
52 mJ
64 A
16.3 A
.0052 ohm
22.73 W
192 A
NVD6820NLT4G
NVD6820NLT4G by Onsemi is a N-CHANNEL FET with 90V DS Breakdown Voltage, 310A IDM, and 144mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and high drain current capacity.
144 mJ
90 V
50 A
10 A
.0205 ohm
100 W
310 A
AEC-Q101
NVD6824NLT4G
NVD6824NLT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 231A IDM, and 0.023 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
80 mJ
41 A
8.5 A
.023 ohm
88 W
231 A
NVMFS5826NLT1G
NVMFS5826NLT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 130A IDM, and 0.032 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package suitable for power management applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W at 175 °C.
20 mJ
26 A
.032 ohm
39 W
130 A
NVMFS5826NLT3G
NVMFS5826NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 26A Max ID, and 0.032 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications. With 130A IDM and 39W Pd, it operates in Enhancement Mode at up to 175 °C.
NVMFS5844NLT1G
NVMFS5844NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 61A Drain Current, and 0.016 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
.016 ohm
107 W
247 A
NVMFS5844NLT3G
NVMFS5844NLT3G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 61A max drain current, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W max power dissipation, small outline package style, and -55 to 175°C operating temperature range.
TT8J11TCR
ROHM's TT8J11TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 3.5A Drain Current, 0.043 ohm On Resistance. With small outline package and max temp of 150°C, it suits various electronic designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
12 V
3.5 A
.043 ohm
1.25 W
TT8J13TCR
ROHM TT8J13TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5A IDM, and 0.062 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and small outline package style.
2.5 A
.062 ohm
5 A
SIHG73N60E-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHG73N60E-GE3 is a N-channel power FET with 600V DS breakdown voltage and 236A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.039 ohm max RDS(on), and 520W max power dissipation.
AVALANCHE RATED
2030 mJ
73 A
.039 ohm
TO-247AC
520 W
236 A
IRF7350TRPBF
International Rectifier
IRF7350TRPBF by International Rectifier is a power FET with N-Channel and P-Channel polarity. It has a min DS breakdown voltage of 100V and can handle a max pulsed drain current of 8.4A. This transistor is commonly used for switching applications.
HIGH RELIABILITY
35 mJ
2.1 A
.21 ohm
MS-012AA
R-PDSO-G8
N-CHANNEL AND P-CHANNEL
2 W
8.4 A
NCV8406ADTRKG
NCV8406ADTRKG by Onsemi is an N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 2.31W Power Dissipation. This MOSFET operates in ENHANCEMENT MODE with a temperature range of -40 to 150 °C.
110 mJ
COMPLEX
-40 Cel
2.31 W
RCX450N20
RCX450N20 by ROHM is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It has a max pulsed drain current of 180A and a max drain-source on resistance of 0.055 ohm. This transistor is commonly used for switching applications.
160 mJ
200 V
.055 ohm
e1
180 A
TIN SILVER COPPER
RP1H065SPTR
ROHM RP1H065SPTR is a P-CHANNEL FET with 45V DS Breakdown Voltage and 6.5A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.046 ohm RDS(ON) and 26A IDM.
45 V
6.5 A
.046 ohm
QJD1210011
Powerex
Powerex QJD1210011 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A IDM, 0.025 ohm RDS(on), and SILICON CARBIDE technology. Package style is FLANGE MOUNT with 20 terminals in PLASTIC/EPOXY material.
1200 V
.025 ohm
R-PUFM-X20
20
250 A
UNSPECIFIED
UPPER
SILICON CARBIDE
DMN3112SQ-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: HIGH RELIABILITY; No. of Terminals: 3;
5.8 A
.057 ohm
R-PDSO-G3
1.4 W
FET General Purpose Powers
NDF08N50ZH
NDF08N50ZH by Onsemi is a N-CHANNEL FET with 8.5A max drain current and 35W power dissipation. Ideal for power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor tech and tin terminal finish.
TIN
NDF11N50ZH
NDF11N50ZH by Onsemi is a Power FET with 500V DS Breakdown Voltage, 44A IDM, and 0.52 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.
420 mJ
500 V
.52 ohm
NTMFS4936NCT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; No. of Terminals: 5; Maximum Drain Current (Abs) (ID): 79 A;
96.8 mJ
79 A
11.6 A
.0048 ohm
43 W
235 A
NTP5860NLG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
735 mJ
220 A
283 W
660 A
NVB25P06T4G
NVB25P06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 600mJ EAS, and 0.082 ohm RDS(ON). With a max power dissipation of 120W and operating temperature up to 175 °C, it's suitable for various high-power electronic designs.
600 mJ
27.5 A
.082 ohm
120 W
NVD20N03L27T4G
NVD20N03L27T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 288mJ EAS rating.
ULTRA LOW ON-RESISTANCE
288 mJ
1.75 W
NVD6415ANLT4G
NVD6415ANLT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 79mJ EAS, and 0.056 ohm RDS(ON). Suitable for high-power circuits in automotive and industrial electronics due to its small outline package and high power dissipation of 83W.
79 mJ
.056 ohm
70 pF
83 W
NVMD6N04R2G
NVMD6N04R2G by Onsemi is a N-CHANNEL FET with 5.8A max drain current and 2W max power dissipation. Ideal for power applications, it operates up to 150 °C with matte tin finish, making it suitable for various surface mount designs.
SUD50P04-13L-GE3
Vishay Intertechnology's SUD50P04-13L-GE3 is a P-channel FET with 40V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, 0.013 ohm RDS(on), and 100A pulsed drain current. Suitable for enhancement mode operation in power electronics due to its high performance and small outline package style.
.013 ohm
TO-252
NSTR4501NT1G
NSTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in automotive electronics due to AEC-Q101 compliance and high operating temperature of 150 °C.
20 V
3.2 A
.08 ohm
TO-236
NVD4810NT4G
NVD4810NT4G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 120A IDM, and 0.0157 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance. It features an N-CHANNEL configuration with built-in diode and operates in enhancement mode.
98 mJ
54 A
9 A
.0157 ohm
50 W
NVD5806NT4G
NVD5806NT4G by Onsemi is a power FET with 40V DS breakdown voltage, 33A max drain current, and 0.019 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
39 mJ
33 A
.019 ohm
40 W
67 A
NVD6414ANT4G
NVD6414ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 117A IDM, and 0.037 ohm RDS. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature. Single-channel design with built-in diode in a small outline package for efficient power management.
154 mJ
32 A
.037 ohm
117 A
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