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IRF7350TRPBF

International Rectifier

IRF7350TRPBF by International Rectifier

IRF7350TRPBF by International Rectifier is a power FET with N-Channel and P-Channel polarity. It has a min DS breakdown voltage of 100V and can handle a max pulsed drain current of 8.4A. This transistor is commonly used for switching applications.

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Vyrian

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Nova Conductors

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Aztec Data Supply Inc.

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AZTECH Wire

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Overview

Discover the power and reliability of the IRF7350TRPBF by International Rectifier. As a leading manufacturer in the industry, International Rectifier offers high-quality products that are built to last. The IRF7350TRPBF is a versatile Power Field Effect Transistor (FET) that is perfect for switching applications. With its N-channel and P-channel configuration, this transistor provides exceptional performance and efficiency. Its compact design and surface mount capability make it easy to integrate into any project. Experience the value and benefits of the IRF7350TRPBF, and take your applications to new heights with International Rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and resistant to external elements, ensuring the longevity of the product.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and applications, catering to a wider range of requirements.

Transistor Application: SWITCHING

Being specifically designed for switching applications, this FET ensures efficient and reliable operation in switching circuits.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for easier integration into circuits and provides precise control over the transistor's on/off states.

Maximum Drain-Source On Resistance: 0.21 ohm

With a low drain-source on resistance, this FET offers reduced power losses and improved efficiency in conducting current.

Technical Specifications

Power Field Effect Transistors (FET) IRF7350TRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

35 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Maximum Drain-Source On Resistance:

.21 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

8.4 A

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF7350TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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