Loading...

NVMD6N04R2G

Onsemi

NVMD6N04R2G by Onsemi

NVMD6N04R2G by Onsemi is a N-CHANNEL FET with 5.8A max drain current and 2W max power dissipation. Ideal for power applications, it operates up to 150 °C with matte tin finish, making it suitable for various surface mount designs.

Median Price

$0.866

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,568 parts In-Stock

1+ parts

-

100+ parts

$0.851

1k+ parts

$0.706

10k+ parts

$0.629

3,568

-

$0.851

$0.706

$0.629

Verical

USA . 3,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.882

10k+ parts

$0.787

3,568

-

-

$0.882

$0.787

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,427 parts In-Stock

1+ parts

$0.661

100+ parts

-

1k+ parts

-

10k+ parts

-

1,427

$0.661

-

-

-

Flip Electronics

USA . 600,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600,000

-

-

-

-

Chip Stock

USA . 74,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

74,000

-

-

-

-

Vyrian

USA . 10,886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,886

-

-

-

-

Bristol Electronics

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$0.380

1k+ parts

$0.324

10k+ parts

-

450

-

$0.380

$0.324

-

Microfarads

USA . 425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

425

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 795 parts In-Stock

1+ parts

$0.626

100+ parts

-

1k+ parts

-

10k+ parts

-

795

$0.626

-

-

-

Corohmni

South Africa . 153 parts In-Stock

1+ parts

$0.696

100+ parts

-

1k+ parts

-

10k+ parts

-

153

$0.696

-

-

-

AZTECH Wire

Italy . 274 parts In-Stock

1+ parts

$21.890

100+ parts

-

1k+ parts

-

10k+ parts

-

274

$21.890

-

-

-

Component Stockers USA

USA . 754 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

754

$99.990

-

-

-

Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 27,065 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,065

-

-

-

-

Futuretech Components

Singapore . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Problanco Electronics

Mexico . 6,542 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,542

-

-

-

-

RC Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

TANS Electronics

Latvia . 5,327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,327

-

-

-

-

SupplyDigital Components

Austria . 3,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,062

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Kulean Microsystems

USA . 1,575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,575

-

-

-

-

UHIMA Technologies

Türkiye . 705 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

705

-

-

-

-

Overview

Discover the NVMD6N04R2G by Onsemi, a top-quality N-CHANNEL Power FET that offers superior performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this FET is ideal for a wide range of applications. From power management to motor control, this component delivers exceptional value, efficiency, and longevity. Trust Onsemi's expertise and elevate your projects with the NVMD6N04R2G.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs offer lower on-state resistance and higher efficiency compared to P-CHANNEL FETs, making them a preferred choice for many applications.

Surface Mount: YES

Surface mount FETs are easier to install and take up less space on a PCB, allowing for more compact and efficient designs.

Maximum Drain Current (Abs) (ID): 5.8 A

The high maximum drain current allows the FET to handle high power applications without overheating or failing, making it reliable for demanding tasks.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this FET can handle moderate power levels without getting damaged, ensuring long-term durability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics such as high input impedance and low output capacitance, making this FET suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The FET can operate efficiently at high temperatures up to 150 °C, which is beneficial for applications where thermal management is crucial.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability, ensuring reliable connections during assembly and preventing issues like solder bridging.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, simplifying the manufacturing process and ensuring consistent solder joints.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this FET is compatible with standard reflow soldering processes, making it easy to integrate into production lines.

Technical Specifications

Power Field Effect Transistors (FET) NVMD6N04R2G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

5.8 A

Maximum Drain Current (ID):

5.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVMD6N04R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2