Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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BLP7G07S-140P,118
NXP Semiconductors
N-CHANNEL; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
METAL-OXIDE SEMICONDUCTOR
ENHANCEMENT MODE
225 Cel
N-CHANNEL
FET General Purpose Power
YES
PMZB790SN,315
PMZB790SN,315 by NXP Semiconductors is an N-CHANNEL Power FET with a max drain current of 0.65A and power dissipation of 2.7W. It operates in enhancement mode with a max temp of 150°C, making it ideal for applications requiring high efficiency and reliability in surface mount configurations.
SINGLE
.65 A
e3
1
150 Cel
260
2.7 W
TIN
30
NX3020NAKT,115
NX3020NAKT,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 0.18 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into modern circuits.
.18 A
.285 W
PMGD130UN,115
PMGD130UN,115 by NXP Semiconductors is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 1.3 A and operates at up to 150 °C, ensuring reliability in demanding environments. Its surface mount design simplifies integration into compact circuits.
1.3 A
.39 W
PSMN5R0-100XS,127
PSMN5R0-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 67.5 A and power dissipation of 63.8 W, operating up to 175 °C. Perfect for automotive and industrial uses.
67.5 A
175 Cel
63.8 W
NO
PSMN4R6-100XS,127
PSMN4R6-100XS,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 70.4 A and power dissipation of 63.8 W, operating up to 175 °C. Perfect for automotive and industrial uses, it ensures reliable performance in demanding environments.
70.4 A
PSMN023-40YLCX
PSMN023-40YLCX by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 24 A, dissipates up to 25 W, and operates at temperatures up to 175 °C. Ideal for applications in power supplies and motor control.
24 A
25 W
BUK754R7-60E,127
NXP Semiconductors' BUK754R7-60E,127 is an N-channel Power FET with 100A max drain current and 234W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
100 A
234 W
BUK9515-60E,127
BUK9515-60E,127 from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 54 A and power dissipation of 96 W, making it ideal for high-performance applications in automotive and industrial sectors. With an operating temp up to 175 °C, it ensures reliability in demanding environments.
54 A
96 W
BUK753R5-60E,127
BUK753R5-60E,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 293 W, operating efficiently up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
120 A
293 W
BUK956R1-100E,127
BUK956R1-100E,127 by NXP is a single N-channel power FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.
349 W
PMZB380XN,315
PMZB380XN,315 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 0.93 A and power dissipation of 2.7 W, operating up to 150 °C. Ideal for efficient power management in compact devices.
.93 A
BUK9E1R8-40E,127
BUK9E1R8-40E,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
PMZB420UN,315
PMZB420UN,315 by NXP Semiconductors is an N-CHANNEL FET with 0.9A max drain current and 2.7W max power dissipation in enhancement mode. Ideal for applications requiring a surface-mount single configuration FET with a max operating temperature of 150°C, such as power management systems.
.9 A
PMDPB70EN,115
NXP Semiconductors' PMDPB70EN,115 is an N-CHANNEL Power FET with 3.5A max drain current and 8.33W power dissipation. Ideal for applications requiring high efficiency in a surface-mount package, such as power management systems or motor control circuits operating at up to 150°C.
3.5 A
8.33 W
PMPB40SNA,115
PMPB40SNA,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 12.9 A and operates at temperatures up to 150 °C, making it ideal for high-performance applications. Its surface mount configuration ensures easy integration into compact designs.
12.9 A
3.5 W
BUK952R8-60E,127
BUK952R8-60E,127 from NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
PMV170UN,215
PMV170UN,215 by NXP Semiconductors is a single N-channel Power FET with 1A max drain current and 1.14W max power dissipation. Ideal for applications requiring enhancement mode operation, such as power management systems in electronics.
1 A
1.14 W
PMDPB42UN,115
NXP Semiconductors' PMDPB42UN,115 is an N-CHANNEL Power FET with 3.9A max drain current and 8.33W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
3.9 A
BUK7514-60E,127
BUK7514-60E,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 58 A and power dissipation of 96 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
58 A
PMV185XN,215
PMV185XN,215 by NXP Semiconductors is an N-CHANNEL FET with 1.1A max drain current and 1.275W power dissipation in enhancement mode. Ideal for applications requiring high efficiency and performance in a compact design at up to 150°C operating temperature.
1.1 A
1.275 W
PMF77XN,115
PMF77XN,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 1.63 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.
1.63 A
.35 W
PMZB300XN,315
PMZB300XN,315 by NXP Semiconductors is an N-CHANNEL FET with 1A max drain current and 0.715W power dissipation. Ideal for applications requiring a single configuration, surface mount capability, and operating in enhancement mode up to 150°C.
.715 W
3SK291(TE85L,F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .03 A; Maximum Operating Temperature: 125 Cel;
.03 A
125 Cel
.15 W
FET General Purpose Powers
HN4K03JU(TE85L,F)
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 150 Cel;
.1 A
.2 W
SSM3K303T(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Drain Current (Abs) (ID): 2.9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2.9 A
.7 W
SSM3K106TU(TE85L)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 1.2 A;
1.2 A
.8 W
SSM3K15CT(TPL3)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
.1 W
SSM3K16CT(TPL3)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Drain Current (Abs) (ID): .1 A; No. of Elements: 1;
SSM3K309T(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
4.7 A
SSM3K302T(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3 A
PMT760EN,115
NXP Semiconductors' PMT760EN,115 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation in enhancement mode. Ideal for applications requiring high drain current up to 150°C, such as power management systems.
6.2 W
PMT760EN,135
NXP Semiconductors' PMT760EN,135 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation at up to 150°C, this surface-mount transistor offers reliable performance in various power management systems.
2SK1828(TE85L,F)
Toshiba's 2SK1828(TE85L,F) is an N-CHANNEL FET with a max drain current of 0.05A and power dissipation of 0.2W. Ideal for applications requiring low power consumption, such as portable electronics or battery-operated devices due to its surface mount configuration and enhancement mode operation.
.05 A
PSMN8R5-100XSQ
PSMN8R5-100XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 49 A and power dissipation of 55 W, operating up to 175 °C. This transistor is perfect for automotive and industrial uses.
49 A
55 W
2SK2034(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .1 A;
2SK1829(TE85L,F)
The Toshiba 2SK1829(TE85L,F) is an N-CHANNEL Power FET with a max drain current of 0.05A and power dissipation of 0.1W in enhancement mode. Ideal for applications requiring low power consumption, such as portable electronics or battery-operated devices due to its single configuration and surface mount capability.
PMG45UN,115
PMG45UN,115 by NXP Semiconductors is an N-CHANNEL Power FET with 3A Max Drain Current and 0.715W Power Dissipation. It operates in ENHANCEMENT MODE at up to 150°C, suitable for various power management applications.
VNP49N04-E
STMicroelectronics
VNP49N04-E by STMicroelectronics is an N-CHANNEL power FET with a max drain current of 68A and a max power dissipation of 125W. It operates in enhancement mode and is suitable for applications requiring high current handling capabilities, such as motor control or power supply systems.
68 A
125 W
Matte Tin (Sn)
VNV28N04TR-E
VNV28N04TR-E by STMicroelectronics is a N-CHANNEL FET with 28A max drain current and 83W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as automotive systems and industrial controls.
28 A
3
250
83 W
MATTE TIN
VNB28N04-E
STMicroelectronics VNB28N04-E is a N-CHANNEL FET with 28A max drain current and 83W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 150 °C. Suitable for surface mount assembly, this MOSFET features a peak reflow temp of 245°C and MSL level of 3.
245
VNB28N04TR-E
VNB28N04TR-E by STMicroelectronics is a N-CHANNEL Power FET with 28A max drain current and 83W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as automotive systems and industrial controls.
FW811-TL-E
Onsemi
FW811-TL-E by Onsemi is an N-CHANNEL Power FET with 8A max drain current and 2.2W power dissipation. It operates in enhancement mode, suitable for applications requiring high power efficiency at up to 150 °C. This surface-mount transistor features metal-oxide semiconductor technology and tin/bismuth terminal finish.
8 A
e6
2.2 W
Tin/Bismuth (Sn/Bi)
BLF3G21-6,135
BLF3G21-6,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.3 A and operates up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
2.3 A
200 Cel
BLF1043,135
BLF1043,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for high-temperature applications in electronics. This surface-mount transistor excels in power amplification and switching tasks.
2.2 A
VNB20N07-E
VNB20N07-E by STMicroelectronics is an N-CHANNEL Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm RDS(on). Ideal for applications requiring fast switching, it features a max turn on time of 580ns and turn off time of 1100ns.
COMPLEX
.07 ohm
TO-263
R-PSSO-G2
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
GULL WING
SILICON
1100 ns
580 ns
2SK4099LS-1E
The Onsemi 2SK4099LS-1E is an N-channel Power FET with a max drain current of 8.5A and power dissipation of 35W. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies or motor control systems at up to 150°C.
8.5 A
35 W
SSM5H12TU(TE85L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 1.9 A;
1.9 A
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