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BLF3G21-6,135

NXP Semiconductors

BLF3G21-6,135 by NXP Semiconductors

BLF3G21-6,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.3 A and operates up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,238 parts In-Stock

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Anansix

USA . 1,756 parts In-Stock

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1,756

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Digiode

USA . 1,697 parts In-Stock

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One Stop Electronics

USA . 1,472 parts In-Stock

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$11.050

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$11.050

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AZTECH Wire

Italy . 220 parts In-Stock

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$15.450

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220

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QUARKTWIN TECHNOLOGY LTD

USA . 17,558 parts In-Stock

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17,558

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Corphita

USA . 4,060 parts In-Stock

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4,060

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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UNI Independent Distributors

Spain . 708 parts In-Stock

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Native Components

USA . 409 parts In-Stock

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409

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Northwest PG Solutions

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265

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Overview

Unlock powerful performance with the BLF3G21-6,135 from NXP Semiconductors, a leader in innovative solutions. This N-channel enhancement mode FET is designed for efficiency and reliability, making it perfect for a range of applications, from power management to signal amplification. With its robust construction and superior thermal handling, customers can trust in its quality, ensuring long-lasting performance and unmatched value in their projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are known for their higher electron mobility, leading to faster switching speeds and more efficient operation, making them an excellent choice for high-performance applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the overall space required on the PCB, making it ideal for compact applications.

Surface Mount: YES

Surface mount technology enables easier integration into automated manufacturing processes, resulting in lower production costs and improved reliability of solder joints.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs provide high gain and are generally off when no gate voltage is applied, allowing for low power consumption in standby mode.

Maximum Drain Current (Abs) (ID): 2.3 A

With a maximum drain current of 2.3 A, this FET can handle significant loads, making it suitable for a wide range of power management applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology allows for low input impedance and high switching speed, making it suitable for both analog and digital circuits, enhancing versatility.

Maximum Operating Temperature: 200 °C

Withstanding high temperatures up to 200 °C makes this FET reliable in harsh environments, ensuring stable performance under demanding conditions.

Technical Specifications

Power Field Effect Transistors (FET) BLF3G21-6,135 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.3 A

Maximum Drain Current (ID):

2.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLF3G21-6,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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