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BLF346

Asi Semiconductor

BLF346 by Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 14 W; Maximum Drain Current (ID): 13 A; No. of Elements: 1;

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BLF346 by Asi Semiconductor
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Vyrian

USA . 2,818 parts In-Stock

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Digiode

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One Stop Electronics

USA . 251 parts In-Stock

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UNI Independent Distributors

Spain . 3,896 parts In-Stock

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Corphita

USA . 2,907 parts In-Stock

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Northwest PG Solutions

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Native Components

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Technical Specifications

Power Field Effect Transistors (FET) BLF346 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Asi Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

13 A

Maximum Drain Current (ID):

13 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

BLF346 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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