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PMDPB70EN,115

NXP Semiconductors

PMDPB70EN,115 by NXP Semiconductors

NXP Semiconductors' PMDPB70EN,115 is an N-CHANNEL Power FET with 3.5A max drain current and 8.33W power dissipation. Ideal for applications requiring high efficiency in a surface-mount package, such as power management systems or motor control circuits operating at up to 150°C.

Median Price

$0.472

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39,355 parts In-Stock

1+ parts

-

100+ parts

$0.464

1k+ parts

$0.385

10k+ parts

$0.343

39,355

-

$0.464

$0.385

$0.343

Verical

USA . 36,000 parts In-Stock

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$0.481

10k+ parts

$0.429

36,000

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$0.481

$0.429

Distributors (In-Stock)

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Digiode

USA . 1,449 parts In-Stock

1+ parts

$0.185

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$0.185

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DigiKey Marketplace

USA . 39,355 parts In-Stock

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39,355

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Vyrian

USA . 6,341 parts In-Stock

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Anansix

USA . 2,107 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 515 parts In-Stock

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$0.176

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515

$0.176

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Component Stockers USA

USA . 61,174 parts In-Stock

1+ parts

$0.200

100+ parts

$0.180

1k+ parts

$0.170

10k+ parts

$0.170

61,174

$0.200

$0.180

$0.170

$0.170

Microchip USA

USA . 283 parts In-Stock

1+ parts

$1.300

100+ parts

$1.290

1k+ parts

$1.290

10k+ parts

$1.280

283

$1.300

$1.290

$1.290

$1.280

AZTECH Wire

Italy . 1,121 parts In-Stock

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$17.840

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$17.840

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Kepictronics

USA . 43,550 parts In-Stock

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Continental Prestige Electronics

USA . 39,355 parts In-Stock

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$0.234

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$0.234

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UNI Independent Distributors

Spain . 7,697 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,450 parts In-Stock

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1,450

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Overview

Upgrade your power management system with the PMDPB70EN,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers top-quality Power Field Effect Transistors (FET) like this N-CHANNEL device that offers unmatched performance and reliability. Ideal for a wide range of applications, this enhancement mode transistor provides a maximum drain current of 3.5 A and a maximum power dissipation of 8.33 W. Trust NXP Semiconductors to provide cutting-edge technology and superior products that will take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used in applications where low on-state resistance and high current carrying capability are required.

Surface Mount: YES

Surface mount FETs are easier to integrate into compact electronic designs and are more durable than through-hole mounted components.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the switching behavior and can be used in a wide range of applications including power management and amplification.

Maximum Drain Current (Abs) (ID): 3.5 A

With a maximum drain current of 3.5A, this FET can handle higher currents which make it suitable for power-intensive applications.

Maximum Power Dissipation (Abs): 8.33 W

The high maximum power dissipation of 8.33W ensures that the FET can operate efficiently even under heavy load conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer low gate capacitance and high input impedance which results in faster switching speeds and reduced power consumption.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperature environments without compromising performance.

Terminal Finish: TIN

The TIN terminal finish helps improve solderability and ensures reliable connections with minimal risk of oxidation.

Maximum Time At Peak Reflow Temperature (s): 30

This FET can withstand peak reflow temperatures for up to 30 seconds, making it easier to integrate into automated assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this FET can undergo reflow soldering process without any risk of damage.

Technical Specifications

Power Field Effect Transistors (FET) PMDPB70EN,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMDPB70EN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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