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PMZB380XN,315

NXP Semiconductors

PMZB380XN,315 by NXP Semiconductors

PMZB380XN,315 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 0.93 A and power dissipation of 2.7 W, operating up to 150 °C. Ideal for efficient power management in compact devices.

Median Price

$0.223

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 3,207 parts In-Stock

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$0.232

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$0.192

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$0.172

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$0.172

Verical

USA . 3,207 parts In-Stock

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$0.214

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$0.214

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Digiode

USA . 3,447 parts In-Stock

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$0.093

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Vyrian

USA . 7,882 parts In-Stock

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Anansix

USA . 194 parts In-Stock

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Corphita

USA . 898 parts In-Stock

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$0.088

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$0.088

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Advanced Electronics

New Zealand . 91 parts In-Stock

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$0.821

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$0.747

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$0.673

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91

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AZTECH Wire

Italy . 1,149 parts In-Stock

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$21.310

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Continental Prestige Electronics

USA . 243,343 parts In-Stock

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$0.117

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QUARKTWIN TECHNOLOGY LTD

USA . 29,851 parts In-Stock

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UNI Independent Distributors

Spain . 692 parts In-Stock

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Overview

Elevate your designs with the PMZB380XN,315 from NXP Semiconductors—where innovation meets reliability. This N-channel enhancement mode FET delivers exceptional power efficiency and thermal performance, tailored for a range of applications from consumer electronics to industrial systems. With NXP's commitment to quality and performance, you gain not just a component but a partner in achieving superior results—maximizing efficiency while minimizing footprint. Experience the difference today!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher electron mobility, resulting in better performance and efficiency in switching applications.

Configuration: SINGLE

A single configuration makes integration into circuits simpler, reducing potential points of failure and board space requirements.

Surface Mount: YES

Surface mount design enables compact device packaging, facilitating high-density PCB layouts and enhanced thermal performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows the FET to operate as a normally-off device, providing more control and less power consumption during standby.

Maximum Drain Current (Abs) (ID): 0.93 A

With a drain current rating of 0.93 A, this FET is suitable for a wide range of applications, including low and moderate power devices.

Maximum Power Dissipation (Abs): 2.7 W

A maximum power dissipation of 2.7 W indicates the transistor's ability to handle heat effectively, ensuring reliability under load.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making this FET efficient for various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature threshold ensures the FET can function in demanding environments, reducing the need for additional cooling.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in surface mount applications.

Maximum Time At Peak Reflow Temperature (s): 30

At a reflow time of 30 seconds, this device is compatible with standard soldering processes, enhancing manufacturing efficiency.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C ensures compatibility with modern lead-free soldering techniques, promoting broader usability in production.

Technical Specifications

Power Field Effect Transistors (FET) PMZB380XN,315 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.93 A

Maximum Drain Current (ID):

.93 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMZB380XN,315 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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