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PMG45UN,115

NXP Semiconductors

PMG45UN,115 by NXP Semiconductors

PMG45UN,115 by NXP Semiconductors is an N-CHANNEL Power FET with 3A Max Drain Current and 0.715W Power Dissipation. It operates in ENHANCEMENT MODE at up to 150°C, suitable for various power management applications.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

9,000

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,146 parts In-Stock

1+ parts

$0.093

100+ parts

-

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1,146

$0.093

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Vyrian

USA . 6,442 parts In-Stock

1+ parts

-

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6,442

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Anansix

USA . 2,564 parts In-Stock

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2,564

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,600 parts In-Stock

1+ parts

$0.083

100+ parts

-

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8,600

$0.083

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Corphita

USA . 1,951 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,951

$0.088

-

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Component Stockers USA

USA . 10,833 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

10,833

$0.100

$0.090

$0.080

-

AZTECH Wire

Italy . 357 parts In-Stock

1+ parts

$13.210

100+ parts

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357

$13.210

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QUARKTWIN TECHNOLOGY LTD

USA . 28,313 parts In-Stock

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28,313

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Kepictronics

USA . 12,350 parts In-Stock

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12,350

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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$0.117

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9,000

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$0.117

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UNI Independent Distributors

Spain . 3,166 parts In-Stock

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3,166

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A-Z Elektronik GmbH

Germany . 1,235 parts In-Stock

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1,235

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Overview

Discover the power of innovation with the PMG45UN,115 by NXP Semiconductors. This N-CHANNEL Power FET offers unmatched efficiency and reliability for a wide range of applications. With its state-of-the-art technology and single configuration design, this transistor delivers superior performance in enhancing mode operations. Experience the seamless integration of quality and value with the PMG45UN,115, setting new standards in power management solutions for all your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors generally have lower ON resistance compared to P-CHANNEL transistors, which leads to better efficiency and performance.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to control the transistor in a system.

Surface Mount: YES

Surface mount technology allows for compact and lightweight designs, making it suitable for small electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and require a lower voltage to turn on, improving overall efficiency.

Maximum Drain Current (Abs) (ID): 3 A

With a high maximum drain current, this FET can handle high power applications without overheating or getting damaged.

Maximum Power Dissipation (Abs): 0.715 W

The low power dissipation ensures that the FET operates efficiently and can handle high power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds, low ON resistance, and high input impedance, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand high temperatures without malfunctioning, ensuring reliable performance in various environments.

Technical Specifications

Power Field Effect Transistors (FET) PMG45UN,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

PMG45UN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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