Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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BF904AR,215
NXP Semiconductors
BF904AR,215 by NXP Semiconductors is a N-CHANNEL Power FET with SINGLE configuration. It operates in DUAL GATE, ENHANCEMENT MODE with max ID of 0.03A and Pd of 0.2W. Ideal for applications requiring METAL-OXIDE SEMICONDUCTOR technology, it can handle up to 150°C operating temperature.
SINGLE
.03 A
METAL-OXIDE SEMICONDUCTOR
e3
1
DUAL GATE, ENHANCEMENT MODE
150 Cel
N-CHANNEL
.2 W
FET General Purpose Power
YES
Matte Tin (Sn)
BLF6G10-200RN,112
BLF6G10-200RN,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 49 A and operates at temperatures up to 225 °C, making it ideal for high-power applications in RF amplifiers.
49 A
ENHANCEMENT MODE
225 Cel
BLD6G22L-50,112
BLD6G22L-50,112 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 10.2 A and operates at temperatures up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
10.2 A
200 Cel
260
30
BLD6G22LS-50,112
BLD6G22LS-50,112 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 10.2 A and operates at temperatures up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration enhances design flexibility.
NE5520379A-T1A-A
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 125 Cel;
1.5 A
125 Cel
20 W
AOTF7N65
Alpha & Omega Semiconductor
AOTF7N65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 24A IDM, 347mJ EAS, and 1.56ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and fast switching times (ton:97ns, toff:128ns).
347 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
650 V
7 A
1.56 ohm
9 pF
TO-220AB
R-PSFM-T3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
38.5 W
24 A
NO
THROUGH-HOLE
SWITCHING
SILICON
128 ns
97 ns
AOT480L
AOT480L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 180A ID and 333W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C, making it suitable for demanding industrial and automotive systems.
180 A
175 Cel
333 W
NP32N055SLE-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 32 A;
32 A
66 W
NP22N055SLE-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (Abs) (ID): 22 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
22 A
45 W
NP22N055SHE-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (Abs) (ID): 22 A; Operating Mode: ENHANCEMENT MODE;
UPA672T-T1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Operating Mode: ENHANCEMENT MODE;
.1 A
e6
TIN BISMUTH
AOTF9N70
AOTF9N70 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A IDM, 154mJ EAS, and 1.2ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and can withstand temperatures from -55 to 150°C.
154 mJ
700 V
9 A
1.2 ohm
11 pF
50 W
33 A
AOD5N50
AOD5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A Pulsed Drain Current, 235mJ Avalanche Energy Rating, and 1.6ohm Drain-Source On Resistance. Suitable for high-power operations in various electronic devices.
235 mJ
DRAIN
500 V
5 A
1.6 ohm
7 pF
TO-252
R-PSSO-G2
2
-50 Cel
SMALL OUTLINE
104 W
17 A
GULL WING
AOI4126
AOI4126 by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 43A ID and 100W power dissipation. It operates in enhancement mode with a max temp of 175°C. Ideal for high-power applications requiring efficient switching capabilities.
43 A
100 W
FET General Purpose Powers
2N7002PT,115
2N7002PT,115 by NXP Semiconductors is a single N-channel power FET with max drain current of 0.31A and max power dissipation of 0.77W. It operates in enhancement mode with a max temperature range of -55 to 150°C. Ideal for applications requiring high efficiency and compact design in surface mount configurations.
.31 A
.77 W
TIN
2N7002BKT,115
NXP Semiconductors' 2N7002BKT,115 is a N-CHANNEL FET with 0.29A ID and 0.32W power dissipation. Ideal for applications requiring enhancement mode operation, it has a max operating temp of 150°C. Suitable for surface mount configurations, this MOSFET offers reliable performance in various electronic circuits.
.29 A
.32 W
BUK9MHH-65PNN,518
BUK9MHH-65PNN,518 from NXP Semiconductors is an N-channel power FET ideal for high-efficiency applications. It supports a max drain current of 15 A and operates at up to 150 °C, making it suitable for demanding environments. Its surface mount design enhances versatility in circuit integration.
15 A
5 W
BLD6G21L-50,112
NXP Semiconductors' BLD6G21L-50,112 is a N-CHANNEL FET with 10.2A ID and 200°C max temp. Ideal for power applications, it features SINGLE configuration and METAL-OXIDE SEMICONDUCTOR tech for enhanced performance in surface mount setups.
BLD6G21LS-50,112
BLD6G21LS-50,112 by NXP is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 10.2 A and operates at temperatures up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration enhances design flexibility.
BLF7G22L-200,112
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
BLL1214-250R,112
BLL1214-250R,112 by NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It boasts a max power dissipation of 400 W and operates effectively up to 150 °C. This MOSFET is perfect for efficient power management in various electronic devices.
400 W
BF1218,115
BF1218,115 by NXP Semiconductors is an N-channel power FET designed for dual gate enhancement mode applications. It supports a max drain current of 30 mA and power dissipation of 180 mW, operating up to 150 °C. Ideal for efficient signal amplification in compact devices.
.18 W
BLF7G24L-100,112
BLF7G24L-100,112 by NXP Semiconductors is a Power FET with N-CHANNEL polarity. It operates in ENHANCEMENT MODE with 28A Max Drain Current. Ideal for high-power applications requiring up to 200°C operating temperature.
28 A
BF1217WR,115
BF1217WR,115 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max drain current of 30 mA, power dissipation of 180 mW, and operates at up to 150 °C. Ideal for dual-gate applications in compact electronic devices.
BF1215,115
BF1215,115 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It features a max drain current of 30 mA, power dissipation of 180 mW, and operates up to 150 °C. Ideal for dual-gate applications in compact electronic devices.
BUK9MJJ-65PLL,518
BUK9MJJ-65PLL,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode applications. It supports a max drain current of 11.6 A and power dissipation of 4.4 W, operating up to 150 °C. Ideal for efficient switching in various electronic devices.
11.6 A
4.4 W
BLA0912-250R,112
BLA0912-250R,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-power applications. It features a max power dissipation of 700 W and operates effectively up to 200 °C. Ideal for power management in various electronic devices.
700 W
BF1216,115
BF1216,115 by NXP Semiconductors is a N-CHANNEL Power FET with DUAL GATE, ENHANCEMENT MODE. It features a max drain current of 0.03A and power dissipation of 0.18W. Ideal for applications requiring high efficiency in power management systems at temperatures up to 150°C.
BLS6G2933P-200,117
BLS6G2933P-200,117 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-performance applications. It supports a max drain current of 66 A and operates at temperatures up to 200 °C. Ideal for power management in various electronic devices, it features surface mount configuration.
66 A
BUK9C07-65BIT,118
BUK9C07-65BIT,118 by NXP Semiconductors is a single N-channel MOSFET designed for high-performance applications. It supports a max drain current of 75 A and power dissipation of 245 W, operating up to 150 °C. Ideal for efficient power management in various electronic devices.
75 A
245
245 W
BUK9MTT-65PBB,518
BUK9MTT-65PBB,518 from NXP Semiconductors is an N-channel power FET ideal for high-efficiency applications. It supports a max drain current of 3.8 A and power dissipation of 3.15 W, operating up to 150 °C. This MOSFET is suitable for surface mount designs in various electronic circuits.
3.8 A
3.15 W
BUK652R7-30C,127
NXP Semiconductors' BUK652R7-30C,127 is a N-CHANNEL FET with 100A ID and 204W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C, making it suitable for demanding industrial environments.
100 A
204 W
BUK9MFF-65PSS,518
BUK9MFF-65PSS,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode applications. It supports a max drain current of 13.6 A and operates at temperatures up to 150 °C, making it ideal for high-performance power management solutions. Its surface mount design ensures efficient integration in compact electronic devices.
13.6 A
4.75 W
BLA1011S-200R,112
NXP Semiconductors BLA1011S-200R,112 is a N-CHANNEL FET with 700W power dissipation. It operates in enhancement mode and can withstand temperatures up to 200°C. Ideal for high-power applications requiring efficient switching capabilities.
BUK6507-75C,127
The BUK6507-75 °C,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 100 A and power dissipation of 204 W, operating efficiently up to 175 °C. Ideal for switching and amplification in various electronic circuits.
Tin (Sn)
BLF7G24L-140,112
BLF7G24L-140,112 by NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 28 A and operates up to 200 °C, making it suitable for demanding environments. This MOSFET excels in RF amplification and power management.
BLF7G24L-140,118
BLF7G24L-140,118 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 28 A and operates up to 200 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching tasks.
BUK9MRR-65PKK,518
BUK9MRR-65PKK,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode operation. It supports a max drain current of 4.8 A and power dissipation of 3.2 W, making it ideal for efficient switching applications in high-temperature environments up to 150 °C.
4.8 A
3.2 W
BUK9MNN-65PKK,518
BUK9MNN-65PKK,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode applications. It supports a max drain current of 7.1 A and operates at temperatures up to 150 °C, making it ideal for efficient power management in electronics. Its surface mount design ensures easy integration into compact circuits.
7.1 A
3.57 W
BUK6208-40C,118
The BUK6208-40 °C,118 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 50 A and power dissipation of 128 W, operating up to 175 °C. Ideal for switching and amplification in various electronic circuits.
50 A
128 W
PSMN013-30LL,115
PSMN013-30LL,115 by NXP Semiconductors is a single N-channel MOSFET ideal for power management applications. It supports a max drain current of 21 A and power dissipation of 41 W, operating efficiently up to 150 °C. This enhancement mode FET is perfect for compact surface mount designs.
21 A
41 W
PSMN017-30LL,115
PSMN017-30LL,115 by NXP Semiconductors is an N-channel power FET designed for efficient performance in enhancement mode. It supports a max drain current of 15 A and power dissipation of 37 W, operating up to 150 °C. Ideal for high-efficiency applications like DC-DC converters.
37 W
PSMN014-60LS,115
PSMN014-60LS,115 by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 40 A and power dissipation of 65 W, operating up to 150 °C. Ideal for applications in automotive and industrial sectors.
40 A
65 W
PSMN035-100LS,115
PSMN035-100LS,115 by NXP Semiconductors is a single N-channel MOSFET ideal for power management applications. It supports a max drain current of 27 A and power dissipation of 65 W, operating efficiently up to 150 °C. Its surface mount design enhances versatility in electronic circuits.
27 A
BUK9MPP-65PLL,518
BUK9MPP-65PLL,518 by NXP Semiconductors is an N-channel power FET designed for enhancement mode applications. It supports a max drain current of 8.6 A and power dissipation of 3.84 W, operating up to 150 °C. Ideal for efficient switching in various electronic devices.
8.6 A
3.84 W
PSMN023-80LS,115
PSMN023-80LS,115 by NXP Semiconductors is an N-channel power FET designed for efficient performance in enhancement mode. It supports a max drain current of 34 A and power dissipation of 65 W, making it ideal for high-temperature applications up to 150 °C. This surface-mount transistor is perfect for power management in various electronic devices.
34 A
PSMN3R8-30LL,115
PSMN3R8-30LL,115 by NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 40 A and power dissipation of 69 W, making it ideal for high-efficiency applications in automotive and industrial sectors. With an operating temp up to 150 °C, it ensures reliable performance in demanding environments.
69 W
PSMN7R0-40LS,115
PSMN7R0-40LS,115 by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 40 A and power dissipation of 65 W, operating up to 150 °C. Ideal for applications in automotive and industrial sectors.
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