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PMT760EN,115

NXP Semiconductors

PMT760EN,115 by NXP Semiconductors

NXP Semiconductors' PMT760EN,115 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation in enhancement mode. Ideal for applications requiring high drain current up to 150°C, such as power management systems.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,342,000 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

-

2,342,000

$0.050

$0.050

$0.050

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Verical

USA . 2,125,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.058

2,125,230

-

-

-

$0.058

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 203 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

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203

$0.051

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-

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Vyrian

USA . 8,892 parts In-Stock

1+ parts

-

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8,892

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-

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Anansix

USA . 1,197 parts In-Stock

1+ parts

-

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1,197

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Nova Conductors

Japan . 50 parts In-Stock

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50

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,124,781 parts In-Stock

1+ parts

$0.046

100+ parts

-

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2,124,781

$0.046

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Corphita

USA . 2,160 parts In-Stock

1+ parts

$0.049

100+ parts

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2,160

$0.049

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Corohmni

South Africa . 291 parts In-Stock

1+ parts

$1.588

100+ parts

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291

$1.588

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.067

100+ parts

$1.881

1k+ parts

$1.695

10k+ parts

-

2,000

$2.067

$1.881

$1.695

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AZTECH Wire

Italy . 42 parts In-Stock

1+ parts

$15.870

100+ parts

-

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42

$15.870

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Continental Prestige Electronics

USA . 2,248,230 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.065

10k+ parts

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2,248,230

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$0.065

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Argo Parts USA

USA . 1,007 parts In-Stock

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1,007

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UNI Independent Distributors

Spain . 58 parts In-Stock

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58

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Upgrade your power management solutions with the PMT760EN,115 by NXP Semiconductors. Designed with top-notch quality and reliability, this N-CHANNEL Power Field Effect Transistor offers unmatched performance in a variety of applications. Whether you're looking to enhance your power efficiency or optimize your circuit designs, this single-configured FET is the perfect choice. Experience the value and benefits that only NXP Semiconductors can provide, and take your projects to the next level with the PMT760EN,115.

Feature Benefit Bullets

Polarity or Channel Type

N-channel FETs generally have higher electron mobility compared to P-channel FETs, making them more efficient for power applications.

Configuration

Single configuration FETs are suitable for simple circuit designs and can be easily integrated into various applications.

Surface Mount

Surface mount FETs are compact in size and easy to mount on PCBs, making them ideal for space-constrained applications.

Operating Mode

Enhancement mode FETs can be easily turned on and off, providing precise control over power flow in circuits.

Maximum Drain Current (Abs) (ID)

With a high maximum drain current, this FET can handle moderate to high power loads effectively.

Maximum Power Dissipation (Abs)

The high maximum power dissipation rating allows this FET to withstand heat generated during operation, ensuring reliability.

Field Effect Transistor Technology

Metal-oxide semiconductor technology offers a balance between performance and cost-effectiveness, making it a popular choice for power FETs.

Maximum Operating Temperature

With a high maximum operating temperature, this FET can operate reliably in harsh environments without overheating.

Technical Specifications

Power Field Effect Transistors (FET) PMT760EN,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.9 A

Maximum Drain Current (ID):

.9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

PMT760EN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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