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NTLLD4901NFTWG

Onsemi

NTLLD4901NFTWG by Onsemi

The Onsemi NTLLD4901NFTWG is an N-CHANNEL Power FET with 9.6A max drain current and 3.23W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for high-power circuits in various electronic devices.

Median Price

$0.640

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,200 parts In-Stock

1+ parts

-

100+ parts

$0.640

1k+ parts

$0.531

10k+ parts

$0.474

2,200

-

$0.640

$0.531

$0.474

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,217 parts In-Stock

1+ parts

$0.499

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-

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1,217

$0.499

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Chip Stock

USA . 8,468 parts In-Stock

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8,468

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Vyrian

USA . 5,817 parts In-Stock

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5,817

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Corphita

USA . 830 parts In-Stock

1+ parts

$0.472

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-

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830

$0.472

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Corohmni

South Africa . 143 parts In-Stock

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$0.525

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143

$0.525

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AZTECH Wire

Italy . 819 parts In-Stock

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$8.910

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819

$8.910

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QUARKTWIN TECHNOLOGY LTD

USA . 28,991 parts In-Stock

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28,991

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Problanco Electronics

Mexico . 7,446 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,858 parts In-Stock

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6,858

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Kulean Microsystems

USA . 4,740 parts In-Stock

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4,740

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Kepictronics

USA . 4,000 parts In-Stock

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RC Electronics

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 2,180 parts In-Stock

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SupplyDigital Components

Austria . 1,925 parts In-Stock

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TANS Electronics

Latvia . 858 parts In-Stock

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858

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UHIMA Technologies

Türkiye . 609 parts In-Stock

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609

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Metaverse IC Inc.

Canada . 200 parts In-Stock

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200

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Overview

Discover the NTLLD4901NFTWG by Onsemi, a high-quality N-CHANNEL Power Field Effect Transistor that offers exceptional performance and reliability. Designed by the renowned manufacturer Onsemi, this FET is perfect for a wide range of applications. From power supplies to motor control, this versatile component delivers superior efficiency and power handling capabilities. Experience the value and benefits of choosing the NTLLD4901NFTWG for your next project and unlock new possibilities in electronic design.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL - N-channel FETs generally have lower on-resistance and higher efficiency compared to P-channel FETs, making them a good choice for power applications.

Surface Mount

YES - Surface mount FETs are easier to handle and assemble, making them suitable for modern electronic devices and compact designs.

Maximum Drain Current (Abs) (ID)

9.6 A - High maximum drain current allows the FET to handle higher power loads and provide better performance in various applications.

Maximum Power Dissipation (Abs)

3.23 W - Higher power dissipation capability ensures the FET can operate reliably under heavy loads and high temperatures.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - MOSFET technology offers good switching speed, low on-resistance, and high efficiency, making it suitable for power applications.

Maximum Operating Temperature

150 °C - Higher operating temperature range allows the FET to work in a variety of environments without overheating or performance degradation.

Terminal Finish

MATTE TIN - Matte tin finish provides good solderability and corrosion resistance, ensuring a reliable connection in electronic circuits.

Maximum Time At Peak Reflow Temperature (s)

30 - Longer time at peak reflow temperature allows for proper soldering and rework without damaging the FET.

Peak Reflow Temperature °C

260 - High peak reflow temperature ensures proper soldering and compatibility with lead-free soldering processes.

Technical Specifications

Power Field Effect Transistors (FET) NTLLD4901NFTWG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

9.6 A

Maximum Drain Current (ID):

9.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLLD4901NFTWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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