Loading...

PMT21EN,115

NXP Semiconductors

PMT21EN,115 by NXP Semiconductors

PMT21EN,115 from NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 7.4 A and power dissipation of 8.33 W, operating up to 150 °C. This surface-mount FET excels in enhancement mode configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 155,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

155,000

-

-

-

-

Vyrian

USA . 2,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,016

-

-

-

-

Anansix

USA . 1,371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,371

-

-

-

-

Digiode

USA . 476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

476

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 491 parts In-Stock

1+ parts

$10.050

100+ parts

-

1k+ parts

-

10k+ parts

-

491

$10.050

-

-

-

AZTECH Wire

Italy . 472 parts In-Stock

1+ parts

$19.780

100+ parts

-

1k+ parts

-

10k+ parts

-

472

$19.780

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,750

-

-

-

-

Microchip USA

USA . 7,627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,627

-

-

-

-

UNI Independent Distributors

Spain . 2,409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,409

-

-

-

-

Corphita

USA . 2,319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,319

-

-

-

-

Overview

Unlock exceptional performance with the PMT21EN,115 from NXP Semiconductors—your go-to power FET solution. Renowned for their innovation and reliability, NXP ensures superior quality that empowers a wide range of applications, from energy management to automotive systems. With enhanced efficiency and robust thermal performance, this N-channel transistor guarantees seamless operation, giving you peace of mind and competitive advantage in every design. Enhance your projects with the trusted choice!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better performance and lower on-resistance compared to P-channel counterparts, making this product suitable for high-efficiency applications.

Configuration: SINGLE

A single configuration allows for simpler circuit designs and easier integration into various applications, thus enhancing design flexibility.

Surface Mount: YES

Surface mount technology enables compact designs and efficient PCB layout, making this FET ideal for space-constrained environments.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are commonly used in digital circuits, providing efficient on/off switching capabilities and contributing to low power consumption.

Maximum Drain Current (Abs) (ID): 7.4 A

With a maximum drain current of 7.4 A, this FET can handle considerable load currents, making it suitable for a variety of power applications.

Maximum Power Dissipation (Abs): 8.33 W

A power dissipation of 8.33 W indicates that this FET can effectively manage heat, enhancing reliability and performance in demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making this FET an excellent choice for digital signal applications.

Maximum Operating Temperature: 150 °C

Operating at a high maximum temperature of 150 °C ensures reliability and performance in harsh environmental conditions.

Terminal Finish: TIN

Tin terminal finish enhances solderability and contributes to good electrical performance and durability in the assembly process.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with various soldering processes, which aids in assembly efficiency.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C allows this FET to withstand high-temperature soldering processes, ensuring compatibility with modern manufacturing techniques.

Technical Specifications

Power Field Effect Transistors (FET) PMT21EN,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

7.4 A

Maximum Drain Current (ID):

7.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMT21EN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4