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PMT29EN,115

NXP Semiconductors

PMT29EN,115 by NXP Semiconductors

PMT29EN,115 by NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. Its surface mount design enhances efficiency in compact electronic devices.

Median Price

$0.265

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 285 parts In-Stock

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$0.265

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$0.220

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$0.196

285

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$0.196

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Digiode

USA . 4,762 parts In-Stock

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$0.103

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Vyrian

USA . 4,501 parts In-Stock

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Anansix

USA . 767 parts In-Stock

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Ampacity Inc.

Singapore . 255 parts In-Stock

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$0.092

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Corphita

USA . 3,831 parts In-Stock

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$0.097

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AZTECH Wire

Italy . 527 parts In-Stock

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$15.680

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Perfect Parts

USA . 27,460 parts In-Stock

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UNI Independent Distributors

Spain . 1,930 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 250 parts In-Stock

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Microchip USA

USA . 243 parts In-Stock

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Overview

Unlock unparalleled performance with the PMT29EN,115 from NXP Semiconductors—your go-to choice for robust power management solutions. Renowned for their quality and innovation, NXP delivers this reliable N-channel FET designed for efficiency and durability in demanding applications. Experience enhanced energy efficiency and thermal performance that drives your designs forward, ensuring long-lasting reliability and optimized output. Choose PMT29EN,115 to elevate your projects!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher efficiency, making them ideal for high-speed and high-frequency applications.

Configuration: SINGLE

Single configuration simplifies design and implementation in electronic circuits, ensuring reliability and ease of integration.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly, saving both space and manufacturing costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode devices improve control over current flow, providing better performance in switching applications.

Maximum Drain Current (Abs) (ID): 6 A

With a maximum drain current of 6 A, this FET is suitable for applications requiring significant current handling without overheating.

Maximum Power Dissipation (Abs): 8.33 W

A power dissipation rating of 8.33 W indicates its capability to handle thermal loads efficiently, promoting durability in high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high switching speeds and low power consumption, making it advantageous for modern circuit designs.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability in harsh environments, enhancing product longevity.

Terminal Finish: TIN

Tin terminal finishes ensure good solderability and a robust connection, which is critical for reliable performance in electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The capability to withstand a maximum of 30 seconds at peak reflow temperature ensures compatibility with automated assembly processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C guarantees that the FET can endure high-temperature soldering processes without damaging its performance.

Technical Specifications

Power Field Effect Transistors (FET) PMT29EN,115 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMT29EN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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